Interface phenomenology, dipolar interaction, and the dimensionality dependence of the incommensurate-commensurate transition

Natterman, Thomas

doi:10.1088/0022-3719/16/21/014

Cited by 48 publications

(24 citation statements)

References 21 publications

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“…The extracted effective dimensionality is in sharp contrast with d eff ¼ 2.5 observed in DWs created and imaged under similar conditions in PZT films, 11,12,14 which corresponds to a 2D DW with an additional dimensionality of (d À 1)/2 ¼ 0.5 introduced by the long-ranged dipole interaction. 6 The creep exponent l shows excellent agreement with the predicted value for a 1D disordered elastic system, suggesting that the ferroelectric polymer where DW propagates is essentially two-dimensional. However, the observed roughness exponent f ¼ 0.42 6 0.03 is clearly lower than the expected value of 2/3 for a 1D DW, and contributes to the fractal dimensionality of d eff ¼ 1.5.…”

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confidence: 60%

“…It has been shown that for a d-dimensional system, DWs can be treated as (d-1)-dimensional elastic manifolds that wander in the landscape of random disorder potential. [5][6][7] The static roughness of the DWs can be described by scaling behavior with a characteristic roughness exponent f. 5 When subject to a small driving force f, the propagation of the DWs follows the nonlinear creep behavior with the velocity given by / exp½À D k B T ð f c f Þ l , where D is a scaling energy constant and f c is the critical depinning force. 5 The DW roughness exponent f and creep exponent l can reveal information on the dimensionality and dominating disorder of the system.…”

mentioning

confidence: 99%

“…5 The DW roughness exponent f and creep exponent l can reveal information on the dimensionality and dominating disorder of the system. [5][6][7] In previous studies, direct imaging of DWs using optical or scanning probe approaches have been intensively investigated in magnetic systems [8][9][10] and ferroelectric and multiferroic oxides. [11][12][13][14][15] However, only few scanning probe studies have been carried out on polymeric ferroelectric thin films.…”

mentioning

confidence: 99%

“…It has been shown that DWs can be considered as elastic with the correlation function described by B(L) / L 2f at a length scale larger than the characteristic Larkin length, which is on the order of the DW width or the relevant length of the pinning potential. 5,6 For a 15 ML film, we extracted the average roughness exponent of multiple DWs to be f ¼ 0.42 6 0.03 ( Fig. 2(b)).…”

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Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers

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confidence: 99%

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Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers

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“…7 In such systems, domain walls are pinned by disorder, although a thermally activated nonlinear response is possible even for subcritical forces. However, the induced domain-wall velocity decreases exponentially as the driving force goes to zero.…”

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High-temperature ferroelectric domain stability in epitaxial PbZr0.2Ti0.8O3 thin films

Paruch

Triscone

2006

Applied Physics Letters

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Using high-resolution atomic force microscopy, we have shown extremely high stability of linear ferroelectric domains in epitaxial PbZr 0.2 Ti 0.8 O 3 thin films heated up to 735°C, a significant advantage for technological applications. An elevated transition temperature ϳ785°C is observed even in relatively thick ͑91 nm͒ films, despite relaxation of in-plane film-substrate lattice-mismatch-induced strain. We also demonstrate the negligible role of the film surface in determining the written domain-wall configuration, both by direct comparison of the surface roughness with domain-wall position at successive thermal cycles, and by measurements of domain-wall dynamics before and after heating. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2196482͔The diverse electronic and mechanical properties of ferroelectric perovskites make them particularly interesting for multifunctional devices in which their piezoelectric and pyroelectric properties, as well as their switchable ferroelectric polarization, can be exploited. In addition, local control of polarization by atomic force microscopy ͑AFM͒, combined with oxide growth techniques by which epitaxial single-crystal quality thin films of these materials can be grown on numerous substrates, 1,2 including silicon, 3 allows significant gains to be envisaged in application parameters, such as frequency or information density. An important consideration for devices is thermal stability. For example, in surface acoustic wave ͑SAW͒ frequency filters, thermal effects are a primary cause of device failure, and there is great interest in developing temperature-compensated systems. 4 Recently, a prototype SAW filter was fabricated using ferroelectric domain structures in PbZr 0.2 Ti 0.8 O 3 as 1 -4 GHz range "piezoelectric interdigitated transducers" ͑PIT͒ ͑Ref. 5͒. This material, unlike many standard piezoelectrics, shows a positive temperature coefficient of delay of the transverse vibrational mode resonant frequency. Its use in combination with a negative-temperature-coefficient-of-delay substrate could thus allow compensation of quasistatic thermal effects, provided the ferroelectric domain structures remain stable in the −20-100°C range particularly important for applications. Investigating the effects of heating on ferroelectric domains in epitaxial thin films is thus of obvious practical importance. To understand these effects at the nanometer scale required for miniaturized devices, such studies should focus in particular on domain walls, whose static and dynamic behavior determines the stability and growth of domains in ferroelectric materials.We have recently shown that ferroelectric domain walls in epitaxial thin films are well described as elastic interfaces in the presence of random bond disorder and dipolar interactions, 6 within the theoretical framework developed for elastic objects in random media. 7 In such systems, domain walls are pinned by disorder, although a thermally activated nonlinear response is possible even for subcritical forces. However, the...

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Dielectric tails in K₂ZnCl₄: No evidence for an intrinsic chaotic state

Nattermann

1986

Physica Status Solidi (b)

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It is shown, that the increasing dielectric tail found recently for decreasing impurity concentration Ni in the incommensurate system K,ZnCl, does not indicate the existence of an intrinsic chaotic state. Using a simple model for the pinning of solitons by impurities (but more realistic than those used previously in this context) i t is shown, that the dielectric tails grow with growing soliton density n, but with dropping 1vi. The precise dependence on Ni depends on the pinning mechanism (i.e. weak or strong pinning).Es wird gezeigt, daB der anwachsende dielektrische Auslaufer, der kiirzlich fur abnehmende Storstellenkonzentration Ni in dem inkommensurablen Systein li,ZnCl, gefunden wurde, nicht die Existenz eines intrinsischen chaotischen Zustands anzeigt. Mit einem einfachen Modell fur die Verankerung von Solitonen durch Storstellen (jedoch realistischer als die, die friiher in diesem Zusammenhang benutzt wurden) wird gezeigt, daB die dielektrischen Auslaufer mit wachsender Solitonendichte n,, jedoch mit fallendem Ni wachsen. Die genaue Abhangigkeit von Ni hangt vom Verankerungsmechanismus (d. h. schwache oder starke Verankerung) ab.

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Interface phenomenology, dipolar interaction, and the dimensionality dependence of the incommensurate-commensurate transition

Cited by 48 publications

References 21 publications

Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers

Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers

High-temperature ferroelectric domain stability in epitaxial PbZr0.2Ti0.8O3 thin films

Dielectric tails in K₂ZnCl₄: No evidence for an intrinsic chaotic state

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Interface phenomenology, dipolar interaction, and the dimensionality dependence of the incommensurate-commensurate transition

Cited by 48 publications

References 21 publications

Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers

Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers

High-temperature ferroelectric domain stability in epitaxial PbZr0.2Ti0.8O3 thin films

Dielectric tails in K2ZnCl4: No evidence for an intrinsic chaotic state

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Dielectric tails in K₂ZnCl₄: No evidence for an intrinsic chaotic state