Interface formation in infiltrated Al(Si)/diamond composites

Beffort, O.; Khalid, Fazal Ahmad; Weber, Ludger; Ruch, Patrick; Klotz, Ulrich; Meier, Stephan; Kleiner, S.

doi:10.1016/j.diamond.2005.09.036

Cited by 128 publications

(51 citation statements)

References 16 publications

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“…Their results -1,6×10 6 W/m 2 K for squeeze cast composites and 184×10 6 W/m 2 K for composites processed by gas pressure infiltration -already pointed out that the formation of Al 4 C 3 might in fact be desirable in order to obtain interfacial bonding between aluminum and diamond. Beffort et al [14] reported exactly the same value of 1,6×10 6 W/m 2 K for Al/diamond squeeze cast composites. The value of 184×10 6 W/m 2 K found in [13] with a back-calculation with the Hasselman-Johnson model for composites obtained by gas pressure infiltration is an outstanding value which finds no comparison in the literature.…”

Section: Figuresupporting

confidence: 63%

“…An interesting body of research has been devoted to compare composites fabricated by pressure-assisted methods such as squeeze casting and gas-pressure infiltration [13][14][15]. Squeeze cast Al-7wt%Si/diamond composites, for which metal was rapidly solidified, exhibited lower thermal conductivities than those obtained with gas pressure-assisted infiltration [13].…”

Section: Introductionmentioning

confidence: 99%

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On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality versus processing conditions

Monje

Louis

Molina

2014

Composites Part A: Applied Science and Manufacturing

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Please cite this article as: Monje, I.E., Louis, E., Molina, J.M., On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality vs processing conditions, Composites: Part A (2014), doi: http://dx.doi.org/10. 1016/j.compositesa.2014.08.015 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. TC is mainly governed by the Al-diamond interface characteristics, which are determined by a proper control exerted through processing conditions. Albeit a very low cost and low quality diamond is used, a high value of 667 W/mK has been measured for Al/diamond composites produced under optimized processing conditions. Values above 740 W/mK are reported for the best diamond quality explored in this work. These experimental results, which assign the control over TC mainly to the interface conductance, suggest that many of the limiting values of TC reported in literature for the different explored metal-diamond systems, need to be reconsidered by proper precise control of interface evolution. ON CRITICAL ASPECTS OF INFILTRATED

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Section: Figuresupporting

confidence: 63%

Section: Introductionmentioning

confidence: 99%

On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality versus processing conditions

Monje

Louis

Molina

2014

Composites Part A: Applied Science and Manufacturing

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“…[6,7] or by modifying the diamond surface [8,11]. A particularly interesting case is the Al-diamond system, for which a difference in bonding strength has been observed depending on the orientation of the diamond surface [3,12,13], the adhesion of the metal on the [100] faces being typically better than on the [111] faces of the typically cuboctahedral synthetic diamond particles used in such composites. The origin of this seemingly better adhesion is not clear.…”

Section: Introductionmentioning

confidence: 99%

“…In one case [12], it was concluded that the formation of an interfacial carbide on the diamond [100] face promotes interfacial bonding. In another case [3], still on the [100] face, an oxy-carbide was observed, but was not considered to have a significant impact on the interfacial bonding. The [111] face of the diamond, on the other hand, has been observed not to adhere well to the matrix and be free of reaction products.…”

Section: Introductionmentioning

confidence: 99%

Effect of diamond surface orientation on the thermal boundary conductance between diamond and aluminum

Monachon

Weber

2013

Diamond and Related Materials

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Abstract[100] and [111] oriented diamond substrates were treated using Ar:H and Ar:O plasma treatments, and 1:1 HNO 3 :H 2 SO 4 heated at 200˚C. Subsequent to these treatments, an aluminum layer was either evaporated or sputtered on the substrates. The Thermal Boundary Conductance (TBC) as well as the interfacial acoustical reflection coefficient between this layer and the diamond substrate was then measured using a Time Domain ThermoReflectance (TDTR) experiment. For the Ar:H plasma treated surfaces the [111] oriented faces exhibited conductances 40 % lower than the [100] oriented ones, with the lowest measured TBC at 32±5 MWm −2 K −1 . The treatments that led to oxygen-terminated diamond surfaces (i.e. acid or Ar:O plasma treatments) showed no TBC anisotropy and the highest measured value was 230±25 MWm −2 K −1 for samples treated with Ar:O plasma with a sputtered Al layer on top. Sputtered layers on oxygen-terminated surfaces showed systematically higher TBC than their evaporated counterparts. The interfacial acoustic reflection coefficient correlated qualitatively with TBC when comparing samples with the same type of surface terminations (O or H), but this correlation failed when comparing H and O terminated interfaces with each other.

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“…Beffort et al [30] investigated the Al7Si/diamond system processed by gas pressure assisted infiltration and observed a 50-200-nm-thick amorphous interface layer. Accompanying line scans revealed C, Al, O and a very small signal of Si, close to the diamond surface.…”

Section: (A) (B)mentioning

confidence: 99%

Microstructural characterization and quantitative analysis of the interfacial carbides in Al(Si)/diamond composites

et al. 2018

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The existence of interfacial carbides is a well-known phenomenon in Al/diamond composites, although quantitative analyses are not described so far. The control of the formation of interfacial carbides while processing Al(Si)/diamond composites is of vital interest as a degradation of thermophysical properties appears upon excessive formation. Analytical quantification was performed by GC-MS measurements of gaseous species released upon dissolving the matrix and interfacial reaction products in aqueous NaOH solutions and the CH 4 /N 2 ratio of the evolving reaction gases can be used for quantification. Although the formation of interfacial carbides is significantly suppressed by adding Si to Al, also a decline in composite thermal conductivity is observed in particular with increasing contact time between the liquid metal and the diamond particles during gas pressure infiltration. Furthermore, surface termination of diamond particles positively affects composite thermal conductivity as oxygenated diamond surfaces will result in an increase in composite thermal conductivity compared to hydrogenated ones. In order to understand the mechanisms responsible for all impacts on the thermal conductivity and thermal conductance behaviour, the metal/diamond interface was electrochemical etched and characterized by SEM. Selected specimens were also cut by an ultrashort pulsed laser system to characterize interfacial layers at the virgin cross section in the reactive system Al/diamond.

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Interface formation in infiltrated Al(Si)/diamond composites

Cited by 128 publications

References 16 publications

On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality versus processing conditions

On critical aspects of infiltrated Al/diamond composites for thermal management: Diamond quality versus processing conditions

Effect of diamond surface orientation on the thermal boundary conductance between diamond and aluminum

Microstructural characterization and quantitative analysis of the interfacial carbides in Al(Si)/diamond composites

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