Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

Liang, Huili; Mei, Zengxia; Zhang, Q. H.; Gu, Leilei; Liang, Sisi; Hou, Yaonan; Ye, D. Q.; Gu, Changzhi; Yu, Richeng; Du, Xiaolong

doi:10.1063/1.3595342

Cited by 42 publications

(30 citation statements)

References 17 publications

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“…During the growth, the Mg Knudsen cell is controlled at 362 C, 383 C, and 384.5 C for B-MgZnO, L-MgZnO, and H-MgZnO layers, while keeping the Zn cell and substrate temperature at 310 C and 450 C. The in-plane epitaxial relationship is [11][12][13][14][15][16][17][18][19][20] MgZnO // [11][12][13][14][15][16][17][18][19][20] BeO // Si confirmed by reflection high-energy electron diffraction (RHEED) and transmission electron microscope (TEM). 17 More details of the epitaxial growth can be found elsewhere. 17 Photoluminescence (PL) and photoluminescence excitation (PLE) spectra were obtained at 13.6 K by using synchrotron radiation source as shown in Figs This blue shift is known as Stokes shift which is induced by the inhomogeneous distribution of electrostatic potentials in MgZnO ternary alloys.…”

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confidence: 94%

“…There are some limited reports of Mg x Zn 1Àx O UV PDs fabricated on Si wafers with cutoff wavelengths in visible-blind region. 15,16 In our previous work, we have achieved high-Mg content single wurzite phase Mg x Zn 1Àx O on Si substrates by radio-frequency plasma assisted molecular beam epitaxy (rf-MBE), 17 and UV PDs with different device structures were fabricated and comparatively studied. 18 Based on these achievements, here we report a monolithic dual-band UV PD based on this n-Mg x Zn 1Àx O/p-Si heterostructure which demonstrated a low darkcurrent density with high S/N ratio and fast response speed.…”

mentioning

confidence: 99%

“…As the BeO layer has been proven to be an ineffective carrier blocking layer in our previous reports, 17,18 it will be ignored in our following discussions on carrier transportation behavior in this multilayer structure. During the growth, the Mg Knudsen cell is controlled at 362 C, 383 C, and 384.5 C for B-MgZnO, L-MgZnO, and H-MgZnO layers, while keeping the Zn cell and substrate temperature at 310 C and 450 C. The in-plane epitaxial relationship is [11][12][13][14][15][16][17][18][19][20] MgZnO // [11][12][13][14][15][16][17][18][19][20] BeO // Si confirmed by reflection high-energy electron diffraction (RHEED) and transmission electron microscope (TEM). 17 More details of the epitaxial growth can be found elsewhere.…”

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confidence: 99%

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Dual-band MgZnO ultraviolet photodetector integrated with Si

Hou¹,

Mei²,

Liang³

et al. 2013

Applied Physics Letters

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We have constructed a dual-band ultraviolet photodetector by growing high quality MgxZn1−xO layers on Si substrate with molecular beam epitaxy. The device performance was studied by current-voltage, capacitance-voltage, spectra photoresponse, and time-resolved photoresponse characterizations. It demonstrates a high UV/visible light rejection ratio of more than 2 orders of magnitude and a fast response speed of less than 100 ms. The cutoff wavelength can be at solar-blind (280 nm)/visible-blind (301 nm) region by applying 1 V forward/2 V reverse bias. The working principle of the dual-band photodetector was finally investigated by interpretation of the specific carrier transport behavior with the energy band diagram.

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confidence: 94%

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confidence: 99%

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confidence: 99%

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Dual-band MgZnO ultraviolet photodetector integrated with Si

Hou¹,

Mei²,

Liang³

et al. 2013

Applied Physics Letters

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“…This interface engineering technique with BeO transitional layers enables to monolithically integrate crystalline ZnO related materials on Si. A series of ZnO‐based devices, including solar‐blind ultraviolet photodetectors , dual‐band ultraviolet photodetectors , heterojunction field effect transistors , and three terminal ultraviolet photodetectors have been successfully built on Si substrates.…”

Section: Resultsmentioning

confidence: 99%

Dual‐functional crystalline BeO layer in enhancement‐mode ZnO/Si thin film transistors

Liang

et al. 2017

Physica Rapid Research Ltrs

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Integration of oxides with Si opens promising opportunities for novel multifunctional devices and new applications. To optimize the device performances through the hybrid integration, keeping the oxide/Si interface abrupt is critically important and challenging due to the seemingly unavoidable formation of amorphous SiO x or silicide interfacial layers. Here, we report an interface-engineering approach to this issue by molecular beam epitaxy. A BeO thin layer ($5 nm) was deposited on Si (111) surface using a two-step process of Be deposition and oxidation. The initially formed BeO served as a template for subsequent homo-epitaxial growth of a 10-nm crystalline BeO layer. The well-defined interface between BeO and Si is clearly discerned by high-resolution transmission electron microscopy, implying the role of crystalline BeO as a barrier layer against oxygen atoms' diffusion. High-resolution X-ray photoelectron spectroscopy further confirmed that the combined BeO layers sufficiently protect the Si surface from oxidation. A bottom-gate enhancement-mode thin film transistor was established on a ZnO (130 nm)/BeO (70 nm)/ Si architecture, where BeO was functionalized both as a diffusion barrier and as a high-k gate insulator. It indicates that this methodology can be potentially extended to hybrid integration of other technologically important crystalline oxides with Si infrastructures.

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“…It should be pointed out that similar ZnMgO/Si HJs have been studied recently 34,35 and their spectral characteristics of responsivity exhibited UV light enhancement and visible light suppression. In these papers, no response to the visible region was detected due to the efficient block of photogenerated electrons in Si substrate by the conduction band offset (DE C of 0.38 eV) between Si and ZnMgO (40% of Mg).…”

Section: Photoresponsivity Spectrummentioning

confidence: 98%

Deep traps and photo-electric properties of p-Si/MgO/n-Zn1−xMgxO heterojunction

Płaczek‐Popko

Paradowska

Pietrzyk

et al. 2015

Journal of Applied Physics

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In the paper, the photoluminescence (PL) measurements, current-voltage-temperature (I-V-T) measurements, space charge techniques (C-V and deep level transient spectroscopy (DLTS)), and photocurrent spectral characteristics have been applied to investigate defects in p-Si/MgO/ n-Zn 1Àx Mg x O heterojunction (HJ). The HJ structure was grown on p-type Si (111) substrate with resistivity equal to 0.1 X cm by the plasma-assisted molecular beam epitaxy technique. A radiofrequency cell was used for the generation of oxygen plasma. PL spectrum let us determine the Mg content $10%. Besides the excitonic Zn 0.9 Mg 0.1 O line, the PL spectrum also contains green and yellow emission bands indicating the presence of defect states in the investigated structures. I-V measurements reveal the rectifying properties of the HJ and the current thermally activated with a trap with the activation energy equal to 0.42 eV. DLTS studies yield the majority trap of the activation energy 0.42 eV, confirming the result obtained from the I-V measurements. It was found that the defects related to this trap have a point like behaviour. A spectral characteristic of the photocurrent shows that the p-Si/MgO/n-Zn 1Àx Mg x O HJ may be applied as a photodiode operating within the wavelength range of 300 nm-1100 nm. The dark current transport and photocurrent spectrum were explained using the Anderson model of a HJ. V C 2015 AIP Publishing LLC.

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Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

Cited by 42 publications

References 17 publications

Dual-band MgZnO ultraviolet photodetector integrated with Si

Dual-band MgZnO ultraviolet photodetector integrated with Si

Dual‐functional crystalline BeO layer in enhancement‐mode ZnO/Si thin film transistors

Deep traps and photo-electric properties of p-Si/MgO/n-Zn1−xMgxO heterojunction

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