Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors

Ku, Bon‐Cheol; Abbas, Yawar; Соколов, А.С.; Choi, Changhwan

doi:10.1016/j.jallcom.2017.11.267

Cited by 95 publications

(61 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this case, all the trap sites are not filled and the Ohmic conduction mechanism is associated with this electrical behavior. As increasing voltage, the square dependence on voltage of the Child law ( I ≈ V 2 ) (blue line) is fitted in this high voltage region ranging from 0.4 to 0.7 V. The electrons start to flow through the conduction band once the traps are full filled . Hence, the memory devices switch from HRS to LRS, which is called as the “SET” process.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device

Zhu

Cheng

Shi

et al. 2019

Adv Elect Materials

View full text Add to dashboard Cite

density, fast switching speed, multibit storage potential, and nonvolatile nature, is considered as one of the most promising candidate in nonvolatile memory field. [1][2][3] The RRAM device, with sandwich structure of top metal (TE)/ switching layer/bottom metal (BE), can be switched between a low resistance state (LRS) and high resistance state (HRS) under the stimulation of different voltage amplitudes or polarities. [4] Stable resistive switching (RS) behavior has been observed in various perovskite oxide materials based memory devices, for instances, SrTiO 3 , [5] BaTiO 3 , [6] and BiFeO 3 , [7] etc. However, the perovskite oxide-based RRAM devices are limited by several disadvantages, such as high processing temperature and rigid ceramic property of the switching layer. [8] In recent years, halide perovskites, with formula of ABX 3 (A = CH 3 NH 3+ , CH(NH 2 ) 2+ , Cs + ; B = Pb 2+ , Sn 2+ ; X = Cl − , Br − , I − ), have attracted intensive attention due to their huge potential applications in industrial applications, such as solar cells, [9] photodetectors, [10] light emitting diodes, [11] lasers, [12] and RS memory devices. [13] Many attempts have been focused on this material because of its outstanding properties, for instance, the low exciton binding energy, long-range charge diffusion length, high carrier mobility, high absorption coefficient, and suitable bandgaps. [14][15][16][17] To date, most studies have focused on the organicinorganic hybrid halide perovskites. [16,17] However, despite the demonstrated remarkable performances of the organicinorganic halide perovskites based devices, their industrial applications are limited to the instability, including the poor thermal stability and moisture sensitivity, which is due to the instability nature of the organic cations. [18] Therefore, to obtain air-stable halide perovskites, replacing instable organic cations by stable cations is of great importance. To address this issue, the organic cation is substituted by cesium (Cs) and the ascalled all-inorganic cesium lead halide perovskite (CsPbX 3 ) has attracted a great deal of attention in RS memory field. [19][20][21] All-inorganic halide perovskites have attracted a great deal of attention for applications in resistive switching (RS) memory devices due to their superior stability compared to organic-inorganic hybrid halide perovskites. RS memory devices utilizing air-stable all-inorganic halide perovskite cesium lead bromide (CsPbBr 3 ) film as the switching layer, which are successfully prepared by spin coating at low temperature, are demonstrated. Memory devices based on CsPbBr 3 film exhibit typical reproducible bipolar RS behavior and superior switching characteristics, including the high ON/OFF ratio (≈10 4 ), long data retention (>5 × 10 4 s), and environmental stability. In addition, multilevel storage capability can be achieved through controlling the different compliance currents. The formation and rupture of bromine (Br) vacancy conducting filaments (CFs) is proposed to explain the switching b...

show abstract

Section: Resultsmentioning

confidence: 99%

“…[40][41][42][43] Hence, the memory devices switch from HRS to LRS, which is called as the "SET" process. The linear Ohmic behavior (I ≈ V) (red line) is fitted in the low voltage region ranging from 0 to 0.4 V. The conduction in this region is dominated by thermally generated free electrons trapped in the CsPbBr 3 film.…”

Section: Resultsmentioning

confidence: 99%

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device

Zhu

Cheng

Shi

et al. 2019

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…Rapid progress in today's semiconductor technology has made memory devices approaching their size miniaturization limits and facing the scaling issues. Polycrystalline dielectrics are usually employed as the insulator layer of RRAM and many research articles were reported in the last decade [6][7][8][9]. However, the polycrystalline structure with grains and grain boundaries is expected to limit the device downscaling when the grain size is comparable to that of the memory cell.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties and current conduction mechanisms of LaGdO₃ thin film by RF sputtering for RRAM applications

Chien

Tsai

Huang

2020

Journal of Asian Ceramic Societies

View full text Add to dashboard Cite

Amorphous LaGdO 3 (LGO) thin films were deposited by using RF sputtering system and unipolar resistive switching (URS) properties in the Al/LGO/ITO structure were investigated. The influences of Ar/O 2 ratio, film thickness, postannealing condition, and electrode on the RS properties were also studied. The conductive filaments are mostly related to the numbers of oxygen vacancies that can be controlled through a different deposition atmosphere Ar/O 2 ratio and film thickness. In addition, the RS characteristics and operating voltage can be improved by postannealing treatment. It is suggested that the In ions diffused from ITO participated in the formation of the filaments of the RRAM. The low resistance state (LRS) and high resistance state (HRS) conduction mechanism in the device were dominated by the Ohmic behavior and Schottky emission, respectively. Also, the RS characteristic is significantly affected by the potential barrier height between top electrode and LGO. The proposed RRAM exhibits unipolar resistive switching characteristic for over 400 times switching cycles and high stable retention characteristic for over 10 4 seconds with a resistance ratio (R HRS /R LRS) of around 4 orders.

show abstract

“…Their electrical behavior is largely influenced by the choice of top and bottom electrodes (TE and BE respectively), the presence of oxygen vacancy-rich interfacial layers, or the quality of the metal-oxide layer. Various techniques can be used to deposit HfO 2 layers, including the atomic layer deposition (ALD) 19,25,27–29 , pulsed laser deposition 30 , metal organic and chemical vapor deposition (MOCVD or CVD) 31 , physical deposition by magnetron sputtering 20,32–34 and more recently, sol-gel spin-coating method 35–44 . The ALD, CVD and sputtering techniques all provide a relatively good control over the deposited material properties and high yield.…”

Section: Introductionmentioning

confidence: 99%

Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing

Hadi

Humood

Jaoudé

et al. 2019

Sci Rep

View full text Add to dashboard Cite

In this paper, the memristive switching behavior of Cu/ HfO 2 /p ++ Si devices fabricated by an organic-polymer-assisted sol-gel spin-coating method, coupled with post-annealing and shadow-mask metal sputtering steps, is examined. HfO 2 layers of about 190 nm and 80 nm, are established using cost-effective spin-coating method, at deposition speeds of 2000 and 4000 rotations per minute (RPM), respectively. For two types of devices, the memristive characteristics ( V on , I on , and V reset ) and device-to-device electrical repeatability are primarily discussed in correlation with the oxide layer uniformity and thickness. The devices presented in this work exhibit an electroforming free and bipolar memory-resistive switching behavior that is typical of an Electrochemical Metallization (ECM) I-V fingerprint. The sample devices deposited at 4000 RPM generally show less variation in electrical performance parameters compared to those prepared at halved spin-coating speed. Typically, the samples prepared at 4000 RPM (n = 8) display a mean switching voltage V on of 3.0 V (±0.3) and mean reset voltage V reset of −1.1 V (±0.5) over 50 consecutive sweep cycles. These devices exhibit a large R off / R on window (up to 10 4 ), and sufficient electrical endurance and retention properties to be further examined for radiation sensing. As they exhibit less statistical uncertainty compared to the samples fabricated at 2000 RPM, the devices prepared at 4000 RPM are tested for the detection of soft gamma rays (emitted from low-activity Cs-137 and Am-241 radioactive sources), by assessing the variation in the on-state resistance value upon exposure. The analysis of the probability distributions of the logarithmic R on values measured over repeated ON-OFF cycles, before, during and after exposing the devices to radiation, demonstrate a statistical difference. These results pave the way for the fabrication and development of cost-effective soft-gamma ray detectors.

show abstract

Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors

Cited by 95 publications

References 24 publications

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device

Electrical properties and current conduction mechanisms of LaGdO₃ thin film by RF sputtering for RRAM applications

Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing

Contact Info

Product

Resources

About

Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors

Cited by 95 publications

References 24 publications

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device

Electrical properties and current conduction mechanisms of LaGdO3 thin film by RF sputtering for RRAM applications

Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing

Contact Info

Product

Resources

About

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device

Electrical properties and current conduction mechanisms of LaGdO₃ thin film by RF sputtering for RRAM applications