Interface Engineering for Controlling Device Properties of Organic Antiambipolar Transistors

Abstract

The main purpose of this study is to establish a guideline for controlling the device properties of organic antiambipolar transistors. Our key strategy is to use interface engineering to promote carrier injection at channel/electrode interfaces and carrier accumulation at a channel/dielectric interface. The effective use of carrier injection interlayers and an insulator layer with a high dielectric constant (high-k) enabled the fine tuning of device parameters and, in particular, the onset (V) and offset (V) voltages. A well-matched combination of the interlayers and a high-k dielectric layer achieved a low peak voltage (0.25 V) and a narrow on-state bias range (2.2 V), indicating that organic antiambipolar transistors have high potential as negative differential resistance devices for multivalued logic circuits.

Antiambipolar Transistor: A Newcomer for Future Flexible Electronics

“…Other semiconducting materials are also available as counterparts of TMDCs, including organic semiconductors, carbon nanotubes (CNTs), metal oxides, and black phosphorus (BP) . Meanwhile, organic–organic heterointerfaces have been reported as a new class of organic antiambipolar transistors . These materials have some common features.…”

“…Scalability, reproducibility, and dimension controllability are not possible with the mechanical exfoliation techniques. Organic semiconductors have advantages in this regard because organic films can be grown by simple vacuum deposition . And the film dimensions, such as length, width, and thickness, are controllable simply by adopting shadow‐mask patterning.…”

Negative Transconductance Heterojunction Organic Transistors and their Application to Full‐Swing Ternary Circuits

“…These results indicate that the interposed DNTT layer in the proposed H‐TR contributed to greater charge injection and therefore a lower R C for electron carriers. According to previous studies, the contact resistance can be reduced by locally inserting the charge injection layers, such as MoO 3 and Cs 2 CO 3 between the contact electrode and the semiconductor. Note that the continuous DNTT layer from source to drain in the proposed device provides p‐type on‐current region (Figures S2 and S10, Supporting Information) as well as reducing contact resistance between Au electrode and PTCDI‐C13.…”

Fundamentals of Organic Anti‐Ambipolar Ternary Inverters

“…[12][13][14][15][16][17] In 2018, we reported for the first time the organic "ternary" inverters based on a p-n lateral heterostructure and its gate-controlled anti-ambipolarity. [18][19][20][21] While this novel concept projected a substantial promise for fully organic flexible www.advelectronicmat.de charge-carrier behaviors and associated conduction properties differ drastically at each of the three regimes. Note that we will only present and discuss here the horizontal component of the vector quantities (i.e., current density and electric field) for simplicity, and in consideration of the ultra-thin layers.…”

“…In 2018, we reported for the first time the organic “ternary” inverters based on a p ‐ n lateral heterostructure and its gate‐controlled anti‐ambipolarity 18–21. While this novel concept projected a substantial promise for fully organic flexible MVL circuits,22 still little is known about its basic operation modes and ultimate performances associated with the fundamental device physics.…”