Interface Effect on Ferroelectricity at the Nanoscale

Duan, Chun Gang; Sabirianov, Renat; Mei, Wai Ning; Jaswal, S. S.; Tsymbal, Evgeny Y.

doi:10.1021/nl052452l

Cited by 184 publications

(182 citation statements)

References 31 publications

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“…of the top and bottom interfaces. 8,30,32,[57][58][59][60][61] In the present work, the extrapolation lengths of the top and bottom interface are same, i.e., ␦ I-T = ␦ I-B = ␦ I . 61 Note that ␦ I-T and ␦ I-B have different physical origins, such as different topbottom electrodes, interface effect and polarization switching etc., which may be obtained from first-principle calculations 8,52,55 and a combination of first-principle and phenomenological calculations.…”

Section: ͑6͒mentioning

confidence: 80%

“…In absence of an external electric field, the internal electric field comes from the depolarization field produced by polarization screening charges in the metal electrodes and the inhomogeneous polarization distribution near interfaces. Here the homogeneous polarization distribution is affected by complex factors, 1,8,[28][29][30][31][32][33][34][35] such as surface discontinuity of the ferroelectric layer, 8,27,31,32 and Schottky barriers at interface, etc. 10,14,27,29 Theories and experiments on FNCs taking various forms such as nanodisks ͑ND͒, nanorods ͑NR͒, nanowires ͑NW͒, and nanotubes ͑NT͒ have indicated that their phase-transition or near-phase-transition properties are very sensitive to the applied stress.…”

Section: ͑Pzt͒mentioning

confidence: 99%

“…The second component is more complex and is determined by several factors, including space and surface charges, the small size effect, interface effect or Schottky barriers etc. 8,[27][28][29][30][31][32]46,[57][58][59][60][61] The effects of the surface and interface on the profile of the depolarization field in the FNC and FTF have been discussed in previous works. 34,35,42,53 In general, the profile of the depolarization field is nonuniform near the interfaces, and can be opposite to those at the center of the FNC and FTF.…”

Section: The Physical Modelmentioning

confidence: 99%

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Hyper-sensitive piezophotovoltaic effects in ferroelectric nanocylinders

Zheng

Woo

2010

Journal of Applied Physics

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Photocurrent system of the ferroelectric nanocylinder ͑FNC͒, including nanodisks, nanorods, and nanowires, sandwiched between metal electrodes with the short-circuit boundary conditions has been designed and investigated. Taking into account the polarization charge screening in the electrodes and near-surface inhomogeneous polarization distribution, a theoretical model for investigating the photoinduced current of the FNC under the illumination of light was established. Our results show that the photocurrent of the FNC can be totally controlled by adjusting its size and states of the polarization "up" and "down." Especially, reversing an applied stress can obviously change the photocurrent of the FNC, which is particularly significant near the stress-dependent para/ferroelectric phase transition. This piezophotovoltaic effect may have good potential for applications in high-sensitivity photomechanical sensors, memories, switchable nanodevices, or other photovoltaic nanodevices.

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Section: ͑6͒mentioning

confidence: 80%

Section: ͑Pzt͒mentioning

confidence: 99%

Section: The Physical Modelmentioning

confidence: 99%

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Hyper-sensitive piezophotovoltaic effects in ferroelectric nanocylinders

Zheng

Woo

2010

Journal of Applied Physics

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“…1 A FTJ consists of two metal electrodes separated by a nm-thick ferroelectric barrier which allows electron tunneling through it. Recent experimental 2-4 and theoretical [5][6][7][8] studies of perovskite ferroelectric oxide thin films have demonstrated that ferroelectricity persists down to a nanometer scale, which makes it possible to use ferroelectrics as functional tunnel barriers in FTJs. Contrary to ferroelectric capacitors where leakage currents are detrimental to the device performance, 9 the conductance of a FTJ is the functional characteristic of the device.…”

Section: Introductionmentioning

confidence: 99%

Effect of spin-dependent screening on tunneling electroresistance and tunneling magnetoresistance in multiferroic tunnel junctions

2010

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Zhuravlev, M. Ye.; Maekawa, S.; and Tsymbal, Evgeny Y., "Effect of spin-dependent screening on tunneling electroresistance and tunneling magnetoresistance in multiferroic tunnel junctions" (2010 Using a ferroelectric barrier as a functional material in a ͑magnetic͒ tunnel junction has recently attracted significant interest due to new functionalities not available in conventional tunnel junctions. Switching a ferroelectric polarization of the barrier alters conductance resulting in a tunneling electroresistance ͑TER͒ effect. Using a ferroelectric barrier in a magnetic tunnel junction makes it mutiferroic where TER coexists with tunneling magnetoresistance ͑TMR͒. Here we develop a simple model for a multiferroic tunnel junction ͑MFTJ͒ which consists of two ferromagnetic electrodes separated by a ferroelectric barrier layer. The model explicitly includes the spin-dependent screening potential and thus extends previously developed models for FTJs and MFTJs. Our results demonstrate that the effect of spin-dependent screening may be sizable and may provide significant contributions to TMR and TER in MFTJs. We find that, similar to FTJs with a composite ͑ferroelectric/dielectric͒ barrier layer, the TER in a MFTJ with such a barrier is dramatically enhanced indicating that the resistance ratio between the states corresponding to the opposite polarization orientations may be as high as 10 4 and even higher. Our results demonstrate the possibility of four resistance states in MFTJs with a pronounced difference in resistance and a possibility to control these resistance by an electric field ͑through ferroelectric polarization of the barrier͒ and by a magnetic field ͑through magnetization configuration of the electrodes͒. These functionalities may be interesting to device applications of MFTJs.

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“…The ferroelectric film in this heterostructure is about 66 Å thick, well exceeding the critical thickness for ferroelectricity ͑see, e.g., Ref. 25 14 To reduce the highly intensive computational efforts to a manageable level, we only use three unit cells of BaTiO 3 in the slice structure shown in Fig. 1͑a͒.…”

mentioning

confidence: 99%

Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface

Duan¹,

Velev²,

Sabirianov³

et al. 2008

Applied Physics Letters

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145

122

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It is predicted that magnetic anisotropy of a thin magnetic film may be affected by the polarization of a ferroelectric material. Using a Fe∕BaTiO3 bilayer as a representative model and performing first-principles calculations, we demonstrate that a reversal of the electric polarization of BaTiO3 produces a sizable change in magnetic anisotropy energy of Fe films. Tailoring the magnetic anisotropy of a nanomagnet by an adjacent ferroelectric material may yield entirely new device concepts, such as electric-field controlled magnetic data storage.

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Interface Effect on Ferroelectricity at the Nanoscale

Cited by 184 publications

References 31 publications

Hyper-sensitive piezophotovoltaic effects in ferroelectric nanocylinders

Hyper-sensitive piezophotovoltaic effects in ferroelectric nanocylinders

Effect of spin-dependent screening on tunneling electroresistance and tunneling magnetoresistance in multiferroic tunnel junctions

Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface

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