Interface-doping modulated structural and electronic properties of two-dimensional silica supported on metal substrate

Meng, Qingling; Wu, Jinge; Zhai, Shuwei; Hao, Xiamin; Zhang, Ling; Li, Tianzhao; Luo, Fangxue; Jia, Yuxia; Niu, Tianchao; Zhou, Miao

doi:10.1016/j.apsusc.2019.144677

Cited by 2 publications

(2 citation statements)

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“…37 Moreover, Al impurities at the Ru/SiO 2 interface not only increase the charge transfer between Ru and SiO 2 but enhance the stabilization and tune the charging state of Au/Pt atoms adsorbed at the interface and consequently benefit the activity and lifetime of single-atom catalysts. 38 Besides, a large amount of Ti added to the Ag/Al 2 O 3 interface may enhance the adhesion energy of the interface owing to the presence of strong Ti−O ionic bonds at the interface. 39 It is also reported that yttrium impurities can significantly enhance the tensile strength and adhesion property of Ni/Al 2 O 3 40 and FeAl/ Al 2 O 3 41 interfaces.…”

Section: Introductionmentioning

confidence: 99%

“…As for the metal/oxide interface, removing some metal atoms or inserting oxygen interstitials at the interface especially in the vicinity of interface misfit dislocations can stabilize the Ag/MgO interface . Moreover, Al impurities at the Ru/SiO 2 interface not only increase the charge transfer between Ru and SiO 2 but enhance the stabilization and tune the charging state of Au/Pt atoms adsorbed at the interface and consequently benefit the activity and lifetime of single-atom catalysts . Besides, a large amount of Ti added to the Ag/Al 2 O 3 interface may enhance the adhesion energy of the interface owing to the presence of strong Ti–O ionic bonds at the interface .…”

Section: Introductionmentioning

confidence: 99%

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Oxygen Impurity-Tuned Structure and Adhesion Properties of the Cu/SiO₂ Interface

Lan,

Yan,

et al. 2024

ACS Appl. Mater. Interfaces

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The properties of the Cu/SiO 2 interface usually deteriorate in the complex atmospheric environment, which may limit its performance and application in the engineering. Using the reactive molecular dynamics method, we investigate how the mechanical behaviors of the Cu/SiO 2 interface change as it interacts with oxygen impurities. The interfacial oxidation degree could be enhanced as O 2 penetrates into the interface area. This makes the interfacial structure disordered and is not conducive to the survival of Cu−O−Si bondings, which reduces the tensile and shear strengths of the interface. To improve the abrupt bonding property change at the interface and modify the interfacial adhesion properties, O impurities are introduced at the Cu interstitial sites near the interface. By doing so, the interface strength can be significantly enhanced due to the production of typical O−Cu−O bondings while the regular interfacial structure is retained. Meanwhile, the interfacial oxidation also changes the tensile failure site and shearing sliding mode of the interface, i.e., from inside the oxide to between oxide and Cu. The findings of this work may not only advance the understanding of interaction mechanism between oxygen impurities and the Cu/SiO 2 interface but also provide new insights into optimizing the bonding properties of the metal/oxide interface.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Oxygen Impurity-Tuned Structure and Adhesion Properties of the Cu/SiO₂ Interface

Lan,

Yan,

et al. 2024

ACS Appl. Mater. Interfaces

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show abstract

Nano/micro-scale numerical simulation and microscopic analysis on metal/oxide interfaces: A review

Jiang²,

Sun³

et al. 2022

Composites Part A: Applied Science and Manufacturing

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Interface-doping modulated structural and electronic properties of two-dimensional silica supported on metal substrate

Cited by 2 publications

References 60 publications

Oxygen Impurity-Tuned Structure and Adhesion Properties of the Cu/SiO₂ Interface

Oxygen Impurity-Tuned Structure and Adhesion Properties of the Cu/SiO₂ Interface

Nano/micro-scale numerical simulation and microscopic analysis on metal/oxide interfaces: A review

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Interface-doping modulated structural and electronic properties of two-dimensional silica supported on metal substrate

Cited by 2 publications

References 60 publications

Oxygen Impurity-Tuned Structure and Adhesion Properties of the Cu/SiO2 Interface

Oxygen Impurity-Tuned Structure and Adhesion Properties of the Cu/SiO2 Interface

Nano/micro-scale numerical simulation and microscopic analysis on metal/oxide interfaces: A review

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Product

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Oxygen Impurity-Tuned Structure and Adhesion Properties of the Cu/SiO₂ Interface

Oxygen Impurity-Tuned Structure and Adhesion Properties of the Cu/SiO₂ Interface