Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

Lin, Shisheng; Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhang, Shengjiao; Zhong, Huikai; Wu, Zhanjun; Xu, Weiwei; Chen, Hongsheng

doi:10.1038/srep15103

Cited by 113 publications

(79 citation statements)

References 39 publications

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“…Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. low-dimensional materials, which, apart from the insights from the scientific point-of-view, suggest possible novel applications of two-dimensional TMDs in thin and flexible optoelectronic devices, such as photodiodes [10,11] and photodetectors [12], single-photon emitters [13][14][15] or in spin-and valleytronic devices [16]. However, their quasi-2D nature is a double-edged sword in the sense that the low thickness limits the absorption efficiency and optical quantum yields of the TMD materials.…”

Section: Introductionmentioning

confidence: 99%

Light-Matter Interactions in Two-Dimensional Transition Metal Dichalcogenides: Dominant Excitonic Transitions in Mono- and Few-Layer MoX$_2$ and Band Nesting

Gillen

Maultzsch

2017

IEEE J. Select. Topics Quantum Electron.

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We report ab initio calculations of the dielectric function of six mono-and bilayer molybdenum dichalcogenides based in a Bethe Salpeter equation+G0W0 (BSE@G0W0)ansatz, focussing on the excitonic transitions dominating the absorption spectrum up to an excitation energy of 3.2 eV. Our calculations suggest that switching chalcogen atoms and the strength of interlayer interactions should affect the detailed composition of the high 'C' peaks in experimental optical spectra of molybdenum dichalcogenides and cause a significant spin-orbit-splitting of the contributing excitonic transitions in monolayer MoSe2 and MoTe2. This can be explained through changes in the electronic dispersion around the Fermi energy along the chalcogen series S→Se→Te that move the van-Hove singularities in the density of states of the two-dimensional materials along the Γ-K line in the Brillouin zone. Further, we confirm the distinct interlayer character of the 'C' peak transition in few-layer MoS2 that was predicted before from experimental data and show that a similar behaviour can be expected for MoSe2 and MoTe2 as well.

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Section: Introductionmentioning

confidence: 99%

Light-Matter Interactions in Two-Dimensional Transition Metal Dichalcogenides: Dominant Excitonic Transitions in Mono- and Few-Layer MoX$_2$ and Band Nesting

Gillen

Maultzsch

2017

IEEE J. Select. Topics Quantum Electron.

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“…The monolayer MoS 2 itself is too thin to absorb enough incoming light. In the previous paper, we have designed MoS 2 /GaAs solar cells with a power conversion efficiency over 9.03% [35], which utilizes the good optoelectronic characteristics and high carrier mobility of GaAs [36][37][38]. In this communication, we design a simple and high performance …”

Section: Introductionmentioning

confidence: 99%

Monolayer MoS 2 /GaAs heterostructure self-driven photodetector with extremely high detectivity

Lin

et al. 2016

Nano Energy

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139

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Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS 2 /GaAs heterojunction as a self-driven photodetector with wide response band width from ultraviolet to visible light, which exhibits high sensitivity to the incident light of 635 nm with responsivity as 446 mA/W and detectivity as 5.9×10 13 Jones (Jones = cm Hz 1/2 W -1 ), respectively. Employing interface design by inserting h-BN and photo-induced doping by coveringSi quantum dots on the device, the responsivity is increased to 419 mA/W for incident light of 635 nm. Distinctly, attributing to the low dark current of the MoS 2 /h-BN/GaAs sandwich structure based on the self-driven operation condition, the detectivity shows extremely high value of 1.9 × 10 14 Jones for incident light of 635 nm, which is higher than all the reported values of the MoS 2 based photodetectors.

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“…The presence of the obvious band gap allows the fabrication of the MoS 2 transistors with an on/off ratio exceeding 10 8 and the photodetectors with high responsivity [7, 8]. Recently, MoS 2 combined with other semiconductors has attracted much interest, such as GaAs, Si, and GaN [9–13]. These designed heterostructures supply feasible technical route for MoS 2 -based materials to develop practically applicable optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

“…Among all these bulk semiconductors, GaAs has a suitable direct band gap of ~ 1.42 eV and high electron mobility (~ 8000 cm 2 V −1 s −1 ). Lin et al fabricated MoS 2 /GaAs solar cells with a power conversion efficiency over 9.03% [9]. Further, Xu et al reported a MoS 2 /GaAs self-driven photodetector with the extremely high detectivity of 3.5 × 10 13 Jones [10].…”

Section: Introductionmentioning

confidence: 99%

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

et al. 2017

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Molybdenum disulfide (MoS2) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS2/GaAs heterojunctions are fabricated. The lateral photovoltaic effect (LPE) of the fabricated MoS2/GaAs heterojunctions is investigated. The results show that a large LPE can be obtained in the MoS2/n-GaAs heterojunction. The LPE exhibits a linear dependence on the position of the laser illumination and the considerably high sensitivity of 416.4 mV mm− 1. This sensitivity is much larger than the values in other reported MoS2-based devices. Comparatively, the LPE in the MoS2/p-GaAs heterojunction is much weaker. The mechanisms to the LPE are unveiled by constructing the energy-band alignment of the MoS2/GaAs heterojunctions. The excellent LPE characteristics make MoS2 films combined with GaAs semiconductors promising candidates for the application of high-performance position-sensitive detectors.Electronic supplementary materialThe online version of this article (10.1186/s11671-017-2334-z) contains supplementary material, which is available to authorized users.

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Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

Cited by 113 publications

References 39 publications

Light-Matter Interactions in Two-Dimensional Transition Metal Dichalcogenides: Dominant Excitonic Transitions in Mono- and Few-Layer MoX$_2$ and Band Nesting

Light-Matter Interactions in Two-Dimensional Transition Metal Dichalcogenides: Dominant Excitonic Transitions in Mono- and Few-Layer MoX$_2$ and Band Nesting

Monolayer MoS 2 /GaAs heterostructure self-driven photodetector with extremely high detectivity

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

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