Interface control of Pb(Zr Ti1 − )O3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer

Horita, Susumu; Naruse, Tetsuya; Watanabe, Mikio; Masuda, Atsushi; Kawada, Tsuyoshi; Abe, Yukinari

doi:10.1016/s0169-4332(97)80119-5

Cited by 23 publications

(6 citation statements)

References 13 publications

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“…One of the major factors retarding the formation of perovskite phase for PZT films is the serious interdiffusion occurred during post-annealing process. The other factor is the lattice mismatch between the perovskite and amorphous SiO 2 layer coated on Si-substrate [6][7][8].…”

Section: Resultsmentioning

confidence: 99%

Preparation of Pb(Zr,Ti)O 3 Thin Films on Silica Substrate by Metallo-Organic Decomposition

Kao¹,

Tsai²,

Lin³

et al. 2003

Integrated Ferroelectrics

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In this study, we report the deposition of crack-free transparent PZT films (up to ∼859 nm) by metallo-organic decomposition (MOD) process on amorphous silica substrate. Effect of SrTiO 3 (STO) buffer layer on the growth behavior of PZT thin films deposited on SiO 2 -coated silicon substrates was systematically studied. Perovskite phase, which cannot be formed directly on SiO 2 /Si substrates, has been obtained when a thin STO film (∼150 nm) was used as buffer layer. A SIMS examination indicates that the upward diffusion of Si-species into PZT layer is minimal, although downward diffusion of Pb-species into the SiO 2 layer is still observable.

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Section: Resultsmentioning

confidence: 99%

Preparation of Pb(Zr,Ti)O 3 Thin Films on Silica Substrate by Metallo-Organic Decomposition

Kao¹,

Tsai²,

Lin³

et al. 2003

Integrated Ferroelectrics

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“…Pyrochlore phase always formed preferentially and microcracks were induced easily which are shown as X-ray diffraction pattern in Fig. The other factor is the lattice mismatch between the perovskite and amorphous SiO 2 layer coated on Si-substrate [6][7][8]. 1(b), respectively.…”

Section: Resultsmentioning

confidence: 99%

Preparation of Pb(Zr,Ti)O₃ Thin Films on Silica Substrate by Metallo-Organic Decomposition

Kao

Tsai

Lin

et al. 2003

Integrated Ferroelectrics

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“…Buffer layers are frequently introduced in ferroelectric thin films, including lead zirconate titanate (PZT), to control film nucleation, growth rate, 9 and film orientations to achieve improved properties and microstructures, 10 or to minimize the interface reactions and corresponding deterioration in ferroelectric properties 11 . For ferroelectric PZT thin films, both insulating buffer materials such as PbTiO 3 , 9 TiO 2 , 10,11 zirconia (ZrO 2 ), 12–18 and conducting LaNiO 3 19,20 have been investigated. Among buffer candidates, ZrO 2 is low cost and is well known to have reasonable mechanical strength, chemical durability, alkali resistance, and refractoriness 21,22 .…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Lead Zirconate Titanate Thin Films With a ZrO₂ Buffer Layer on an Electroless Ni‐Coated Cu Foil

Kim

Kingon

Maria

et al. 2006

Journal of the American Ceramic Society

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The effect of zirconia (ZrO2) buffer layers on the phase development and electrical properties of lead zirconate titanate (PZT, 52/48) capacitors on an electroless Ni (P)‐coated Cu foil was investigated. It was demonstrated that the buffer layer can be used to engineer the final properties. The incorporation of the ZrO2 buffer layers retained acceptable capacitance densities (>350 nF/cm2 for 50 nm thick ZrO2), while significantly reducing leakage currents and improving reliability (<10−7 A/cm2 after 1 h at 25 VDC for 100 nm thick ZrO2), compared with PZT thin films directly on electroless Ni (P). The results are particularly important for embedded capacitor applications.

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Interface control of Pb(Zr Ti1 − )O3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer

Cited by 23 publications

References 13 publications

Preparation of Pb(Zr,Ti)O 3 Thin Films on Silica Substrate by Metallo-Organic Decomposition

Preparation of Pb(Zr,Ti)O 3 Thin Films on Silica Substrate by Metallo-Organic Decomposition

Preparation of Pb(Zr,Ti)O₃ Thin Films on Silica Substrate by Metallo-Organic Decomposition

Electrical Properties of Lead Zirconate Titanate Thin Films With a ZrO₂ Buffer Layer on an Electroless Ni‐Coated Cu Foil

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Interface control of Pb(Zr Ti1 − )O3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer

Cited by 23 publications

References 13 publications

Preparation of Pb(Zr,Ti)O 3 Thin Films on Silica Substrate by Metallo-Organic Decomposition

Preparation of Pb(Zr,Ti)O 3 Thin Films on Silica Substrate by Metallo-Organic Decomposition

Preparation of Pb(Zr,Ti)O3 Thin Films on Silica Substrate by Metallo-Organic Decomposition

Electrical Properties of Lead Zirconate Titanate Thin Films With a ZrO2 Buffer Layer on an Electroless Ni‐Coated Cu Foil

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Product

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Preparation of Pb(Zr,Ti)O₃ Thin Films on Silica Substrate by Metallo-Organic Decomposition

Electrical Properties of Lead Zirconate Titanate Thin Films With a ZrO₂ Buffer Layer on an Electroless Ni‐Coated Cu Foil