Interface composition control in InAs/GaSb superlattices

Bennett, B. R.; Shanabrook, B. V.; Wagner, R. J.; Davis, J. L.; Waterman, James; Twigg, M. E.

doi:10.1016/0038-1101(94)90288-7

Cited by 20 publications

(22 citation statements)

References 13 publications

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“…The interfaces for the growths with the lowest P b values are about 37% GaAs-like, considerably higher than what was seen in an earlier work with a similar MEE procedure [1]. This is probably a result of higher As pressures during the interface growth.…”

Section: Article In Pressmentioning

confidence: 52%

“…The InAs layer is then grown with the As shutter open. A very similar procedure has been shown previously to result in predominantly InSb interfaces [1]. It also ensures that the As pressure is already close to steady state when growth of the GaSb layer begins.…”

Section: Methodsmentioning

confidence: 60%

“…In Ref. [1], the InAs layers were grown at 0.13 ML/s versus 1 ML/ s here. The lower growth rate allows In-limited InAs growth with a much lower As flux.…”

Section: Article In Pressmentioning

confidence: 99%

“…One issue that arises in the molecular beam epitaxy (MBE) of these superlattices is cross-contamination of the group V elements [1][2][3]. In general, it has been treated as a nuisance to be minimized.…”

Section: Introductionmentioning

confidence: 99%

“…Prior studies of cross-contamination have shown that Sb contamination is determined, in part, by the amount of excess Sb in the surface reconstruction during GaSb growth [2], and As cross-contamination is determined by the As background pressure [1,4]. There is, however, always an excess of Sb on the surface associated with the reconstruction under typical Sb-rich growth conditions, so there are limited options for controlling Sb cross-incorporation into InAs [5,6].…”

Section: Introductionmentioning

confidence: 99%

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Arsenic cross-contamination in GaSb/InAs superlattices

Jackson¹,

Boishin²,

Aifer³

et al. 2004

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 52%

Section: Methodsmentioning

confidence: 60%

“…In Ref. [1], the InAs layers were grown at 0.13 ML/s versus 1 ML/ s here. The lower growth rate allows In-limited InAs growth with a much lower As flux.…”

Section: Article In Pressmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Arsenic cross-contamination in GaSb/InAs superlattices

Jackson¹,

Boishin²,

Aifer³

et al. 2004

Journal of Crystal Growth

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The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices

Seaford

Solomon

Tomich

et al. 1999

J. Electron. Mater.

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The purpose of this research is to demonstrate the necessity of computer controlled valved group V effusion cell sources in the growth of indium gallium antimonide/indium arsenide (InGaSb/InAs). These sources allow enhanced control of the group V flux. This flux control allows the reduction of unwanted cross contamination and complete control of the interface type. For simple structures, this control can be done manually, however, for complicated structures the control must be automated to allow for reproducibility and uniformity. The InGaSb/InAs strained layer superlattice (SLS) is an example of a complicated structure with hundreds of layers that requires interface type control. Arsenic incorporation with typical flux shuttering was found to be a problem in the growth of antimonide layers and limit interface type control. The antimony incorporation was not found to occur for the growth of arsenide layers. In addition, antimony exposure to critical interfaces did not appear to reduce the interface quality. This research demonstrates that the use of computer controlled valve sources is only required for the arsenic source when attempting to create InGaSb/InAs SLS structures.

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