Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy

Tsai, Chun-Wei; Moser, M.; Geng, C.; Härle, V.; Forner, T.; Michler, Peter; Hangleiter, A.; Scholz, F.

doi:10.1016/0022-0248(94)91143-6

Cited by 57 publications

(44 citation statements)

References 12 publications

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“…The image of In atoms will appear brighter because In atoms are bigger than Ga atoms (also the band gap of InAs is smaller than that of GaAs, which would contribute to a larger tunnel current near In atoms [11]). Indium is known to segregate on InGaP surface [13,14], and thus it will likely incorporate into following GaAs layer. It was proposed that the exchange of P atoms by As atoms is the main reason for degradation of interface abruptness, especially for GaAs-on-InGaP interfaces [6].…”

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confidence: 99%

Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions

Yang

Feenstra

Semtsiv

et al. 2004

Applied Physics Letters

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Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have been investigated by cross-sectional scanning tunneling microscopy and spectroscopy. Images inside the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region at the interfaces is observed, with indium carryover identified at the GaAs-on-InGaP interface. Spatially resolved tunneling spectra with nanometer spacing across the interface were acquired, from which band offsets (revealing that nearly all of band offset occurs in the valence band) were determined.Heterojunctions between In x Ga 1-x P (hereafter InGaP) and GaAs have attracted attention recently because of their device applications. It has been predicted and confirmed that this system should have a large fraction of the total energy gap discontinuity occurring in the valence band, which improves the electron injection efficiency of an heterojunction bipolar transistor (HBT) [1]. However, there exist discrepancies between band offsets results obtained by different techniques for samples grown by different methods/groups. It is known that properties of the interface depend sensitively on the detailed growth conditions [2][3][4][5][6]. Prior experimental techniques used in this system are not spatially resolved and in order to better understand this material system a study of the atomic-scale structural and electronic properties of the junctions is useful.In this work we use scanning tunneling spectroscopy (STS) to study the spatial variation of the InGaP/GaAs electronic band structure at nanometer length scales. The advantage of such work is that band offsets can be measured while simultaneously imaging the atomic-scale structural properties of the interfaces. Due to the experimental challenges of measuring band offsets by STS, there are only a few prior examples of such work, most notably on AlGaAs/GaAs [7]. Liu et al. have used cross-sectional STM to study the ordering effect of InGaP [8]. In this paper, we report cross-sectional STM and STS studies of compositionally abrupt InGaP/GaAs heterojunctions prepared by gassource molecular beam epitaxy (GSMBE). Images inside the InGaP layer reveal a random arrangement of In and Ga atom. This result is consistent with PL results and growth conditions for similar samples that indicate a nearly fully disordered InGaP layer [9]. It is found that GaAs-on-InGaP interface has a slightly wider transition region and more interface intermixing than the InGaP-on-GaAs interface. Both interfaces exhibit InGaAs-like properties. Indium outdiffusion from InGaP into GaAs at the GaAs-onPublished in Appl. Phys. Lett. 84, 227 (2004).

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confidence: 99%

Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions

Yang

Feenstra

Semtsiv

et al. 2004

Applied Physics Letters

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“…[1][2][3][4][5] Its energy ranges from 1.35 to 1.46 eV. Various models have been proposed to explain its origin in MOVPE grown GaInP/GaAs QW structures.…”

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Addendum: Deep emission band at GaInP/GaAs interface

Kwok

Uchida³

et al. 1997

Journal of Applied Physics

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“…Four types of GaAs/GaInP single QW structures were grown by MOVPE on (100) GaAs substrates at 550 °C under the same conditions [4]. Sample No.…”

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confidence: 99%

Excitation and pressure effects on low temperature photoluminescence from GaAs/GaInP heterostructures

Nagata

Kobayashi

Prins

et al. 2004

Physica Status Solidi (b)

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We report for the first time the results of a study of 11 K photoluminescence (PL) measurements of metalorganic vapor phase epitaxy grown GaAs/GaInP quantum wells at pressures up to ~5 GPa and examine the effects of laser excitation energy and intensity. The use of low temperature allows us to study the true nature of a peak at ~1.46 eV, which dominates instead of the GaAs QW emission, even at very low excitation intensities to pressures well above the Γ-X crossover in GaInP. Our results suggest that the ~1.46 eV emission is a spatially indirect transition of electrons and holes separated at the interface in a type-II band alignment.

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Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy

Cited by 57 publications

References 12 publications

Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions

Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions

Addendum: Deep emission band at GaInP/GaAs interface

Excitation and pressure effects on low temperature photoluminescence from GaAs/GaInP heterostructures

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