Interface and layer periodicity effects on the thermal conductivity of copper-based nanomultilayers with tungsten, tantalum, and tantalum nitride diffusion barriers

Cancellieri, Claudia; Scott, Ethan A.; Braun, Jeffrey L.; King, Sean W.; Oviedo, Ron; Jezewski, Christopher; Richards, John F.; Mattina, Fabio La; Jeurgens, Lars P. H.; Hopkins, Patrick E.

doi:10.1063/5.0019907

Cited by 17 publications

(5 citation statements)

References 62 publications

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“…While Cu has a high thermal conductivity (≈400 W m −1 K −1 ), the effective thermal conductivity of actual Cu interconnects is much lower due to the presence of a barrier layer such as TaN that has a low thermal conductivity (≈3 W m −1 K −1 ). [ 28–32 ] The measured thermal conductivity of MoP is similar to that of Ru and Co and higher than other topological metals. E) Comparison chart of carrier density and resistivity of topological semimetals from literature.…”

Section: Resultsmentioning

confidence: 76%

“…The thermal conductivity of MoP is also higher than other topological metals considered as emerging interconnects. [ 10,28–32 ]…”

Section: Resultsmentioning

confidence: 99%

“…D) Comparison of thermal conductivity of various materials for interconnects. While Cu has a high thermal conductivity (≈400 W m −1 K −1 ), the effective thermal conductivity of actual Cu interconnects is much lower due to the presence of a barrier layer such as TaN that has a low thermal conductivity (≈3 W m −1 K −1 ) [28][29][30][31][32]. The measured thermal conductivity of MoP is similar to that of Ru and Co and higher than other topological metals.…”

mentioning

confidence: 86%

“…The thermal conductivity of MoP is also higher than other topological metals considered as emerging interconnects. [10,[28][29][30][31][32] Is there another topological semimetal that may be better than MoP for interconnect applications? To answer this, we surveyed reported values of room temperature transport properties of topological semimetals.…”

Section: Benchmark and Prospect Of Mop As Low-resistance Interconnect...mentioning

confidence: 99%

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Topological Metal MoP Nanowire for Interconnect

et al. 2023

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of interconnects due to its ever-increasing resistivity that stems from surface and grain boundary electron scattering. [3] The high resistivity of current Cu interconnects can account for up to 35% of total signal delays and nearly half of dynamic power dissipation in computer chips. [4] Thus, future energy-efficient computing technologies require breakthroughs in interconnect technologies, [5] particularly in new interconnect materials.Topological semimetals are promising materials for low resistance interconnects as their topologically protected surface electrons are forbidden to backscatter. [6][7][8] Several experimental studies on nanostructured topological semimetals show promising results. The Weyl semimetal NbAs, for example, exhibit a factor of ten decrease in resistivity from bulk crystals (35 µΩ cm) to nanobelts (≈3 µΩ cm) at room temperature. [9] Similarly, recent theoretical results from IBM predict that the multifold fermion system CoSi would exhibit lower resistivity than Cu at very small dimensions as the current conduction is dominated by Fermi-arc surface states. [10] Among recently reported topological metals, molybdenum phosphide (MoP) is a simple binary compound that was predicted [11] and experimentally confirmed to host topologically protected fermions. [12] Single crystal MoP shows extremely low resistivity and high carrier density, [13] representing an exciting opportunity to potentially replace Cu interconnects. In this work, we report The increasing resistance of copper (Cu) interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7 nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries at the nanoscale. Topological semimetals, owing to their topologically protected surface states and suppressed electron backscattering, are promising candidates to potentially replace current Cu interconnects. Here, we report the unprecedented resistivity scaling of topological metal molybdenum phosphide (MoP) nanowires, and it is shown that the resistivity values are superior to those of nanoscale Cu interconnects <500 nm 2 cross-section areas. The cohesive energy of MoP suggests better stability against electromigration, enabling a barrier-free design . MoP nanowires are more resistant to surface oxidation than the 20 nm thick Cu. The thermal conductivity of MoP is comparable to those of Ru and Co. Most importantly, it is demonstrated that the dimensional scaling of MoP, in terms of line resistance versus total cross-sectional area, is competitive to those of effective Cu with barrier/liner and barrier-less Ru, suggesting MoP is an attractive alternative for the scaling challenge of Cu interconnects.

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Section: Resultsmentioning

confidence: 76%

“…The thermal conductivity of MoP is also higher than other topological metals considered as emerging interconnects. [ 10,28–32 ]…”

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 86%

Section: Benchmark and Prospect Of Mop As Low-resistance Interconnect...mentioning

confidence: 99%

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Topological Metal MoP Nanowire for Interconnect

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“…The mechanisms can be concluded as follows: systematically the van der Waals interaction at the interfaces [18] , the surface imperfection [19] and phonon scattering [20] , and the phonon attenuation due to the phonon scatterings [21][22][23] . The main factors that govern the interfacial heat transport across the solid-liquid interface are the bonding strength [24] , temperatures [25][26][27] , and surface size [28][29][30] .…”

Section: Introductionmentioning

confidence: 99%

Temperature effects on thermal transport at the graphene-liquid interface

Chen¹,

Yang²,

Qiao³

et al. 2022

Eng. Sci.

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The mechanism of thermal resistance between graphene layers and nanofluids is essentially important to the performance and reliability of the graphene microchannels. In this paper, the interfacial thermal resistance of the graphenewater, graphene-ethanol, and graphene-ethylene glycol systems are systematically investigated using non-equilibrium molecular dynamics simulations (NEMD). The results showed that the interfacial thermal resistance of the three structures showed different trends as the temperature increased. The interfacial thermal resistance of the graphene-water, the graphene-ethanol, and the graphene-glycol system achieve a minimum value at 285 K, 165 K, and 335 K, respectively. The effects of graphene width on graphene-water interfacial thermal resistance are greater than that of graphene-ethanol and graphene-ethylene glycol systems, however, the thickness of the liquid cluster has greater effect on the interfacial thermal resistance for the graphene-ethanol and graphene-ethylene glycol interfaces than that of graphene-water system. The near-wall density analysis and phonon density of states analysis are calculated to explain the validity of our NEMD simulation results. Our study is helpful for improving the efficiency of the graphene microchannels.

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