Interdistance Effects on Flat and Buckled Silicene Like-bilayers

Naji, S.; Khalil, B.; Labrim, H.; Bhihi, M.; Belhaj, A.; Benyoussef, A.; Lakhal, M.; Kenz, A. El

doi:10.1088/1742-6596/491/1/012006

Cited by 6 publications

(4 citation statements)

References 35 publications

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“…Bond length within each layer has been reported with a value around 2.4 and 2.6Å for at and buckled congurations, respectively. 45,46 Likewise, the existence of a strong coupling between layers of silicene has been already reported in ref. 33 and 47.…”

Section: Resultssupporting

confidence: 62%

Mechanical response of bilayer silicene nanoribbons under uniaxial tension

2018

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Section: Resultssupporting

confidence: 62%

Mechanical response of bilayer silicene nanoribbons under uniaxial tension

2018

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“…Further investigation will be required to differentiate between various possible configurations, including a bilayer of silicene or a previously unseen layered phase or surface reconstruction. We note that the apparent interlayer spacing of 0.15 nm is different from the 0.24-0.42 nm spacing expected for an isolated bilayer of silicene [28,40,41], though the sensitivity of silicene to the supporting substrate leaves open the possibility for a novel surface reconstruction of a silicene multilayer structure. It is also noted that although surface segregation of Zr or B to the surface cannot be ruled out, it is considered to be unlikely due to the high thermal stability or ZrB 2 [47] and the lack of a band gap as would be expected for B-terminated silicon [48,49].…”

Section: Resultscontrasting

confidence: 60%

“…This indicates that part of the apparent height difference arises from differences in the electronic structure of the two layers. Importantly, this distance is less than that of the ZrB 2 step height of 0.35 nm [39], and less than predicted values for multi-layer silicene [28,40,41]. It however suggests the formation of a layered silicon structure thicker than silicene.…”

Section: Resultsmentioning

confidence: 57%

Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB ₂

et al. 2017

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Using low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM), we observe a new two-dimensional (2D) silicon crystal that is formed by depositing additional Si atoms onto spontaneously-formed epitaxial silicene on a ZrB 2 thin film. From scanning tunnelling spectroscopy (STS) studies, we find that this atomically-thin layered silicon has distinctly different electronic properties. Angle resolved photoelectron spectroscopy (ARPES) reveals that, in sharp contrast to epitaxial silicene, the layered silicon exhibits significantly enhanced density of states at the Fermi level resulting from newly formed metallic bands. The 2D growth of this material could allow for direct contacting to the silicene surface and demonstrates the dramatic changes in electronic structure that can occur by the addition of even a single monolayer amount of material in 2D systems. LETTER Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.

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“…Consequently, the so-called π-electrons exhibit peculiar properties such as long spin diffusion length [36], long spin coherency [36], high-efficiency spin injection [37], etc.. Regarding the electronic states, however, there is an important difference between graphene and silicene: In the latter the buckling effect [38,39], where one sublattice is shifted upwards relative to the other, is of great consequences, while in the former such buckling is quite negligible [40]. As a result, the buckling effect in silicene breaks the space inversion symmetry, consequently, the behavior of electrons around the Dirac points is distinctly different [41].…”

Section: Introductionmentioning

confidence: 99%