Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB
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Gill, Tobias G.; Fleurence, Antoine; Warner, Ben; Prüser, Henning; Friedlein, Rainer; Sadowski, Jerzy; Hirjibehedin, Cyrus F.; Yamada‐Takamura, Yukiko

doi:10.1088/2053-1583/aa5a80

Cited by 16 publications

(10 citation statements)

References 59 publications

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“…Temperature dependent resistivity and high frequency susceptibility measurements in ZrB 2 revealed a superconducting transition at 5.5 K 22 . Thin films of ZrB 2 can be grown by chemical vapour epitaxy on Si wafers, to additionally provide an electrically conductive substrate for GaN 23 , or the synthesis of monolayered materials 24 . The series of electronic band diagrams in Figure 2 shows the evolution of the electronic states of ZrB 2 , from bulk to monolayer, with successive increases of the distance ∆z between stuck layers with no geometric optimization of the atomic positions.…”

Section: Resultsmentioning

confidence: 99%

Twelve inequivalent Dirac cones in two-dimensional ZrB2

López-Bezanilla

2018

Phys. Rev. Materials

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Theoretical evidence of the existence of 12 inequivalent Dirac cones at the vicinity of the Fermi energy in monolayered ZrB2 is presented. Two-dimensional ZrB2 is a mechanically stable d-and porbital compound exhibiting a unique electronic structure with two Dirac cones out of high-symmetry points in the irreducible Brillouin zone with a small electron-pocket compensation. First-principles calculations demonstrate that while one of the cones is insensitive to lattice expansion, the second cone vanishes for small perturbation of the vertical Zr position. Internal symmetry breaking with external physical stimuli, along with the relativistic effect of SOC, is able to remove selectively the Dirac cones. A rational explanation in terms of d-and p-orbital mixing is provided to elucidate the origin of the infrequent amount of Dirac cones in a flat structure. The versatility of transition metal d-orbitals combined with the honeycomb lattice provided by the B atoms yields novel features never observed in a two-dimensional material.

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Section: Resultsmentioning

confidence: 99%

Twelve inequivalent Dirac cones in two-dimensional ZrB2

López-Bezanilla

2018

Phys. Rev. Materials

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“…Only the carbon-related 2D materials are synthesized by the various growth methods, while the others are produced under the molecular beam epitaxial growth and the mechanical method. By using STM [or combination with LEED/RHEED], the graphene-like honeycomb lattices are clearly revealed in group-IV 2D systems, such as, 2D C-, Si-Ge-, Sn-, and Pb-adlayer, with the hexagonal symmetries, respectively, on SiO 2 /Cu/Bi 2 Se 3 [45,46,47],Ag (111), Ir (111) and ZrB 2 (0001) [48,49,50,51,52,53],…”

Section: Introductionmentioning

confidence: 99%

Stacking-configuration-enriched essential properties in bilayer silicenes

Liu,

Lin,

2019

Preprint

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The geometric, electronic and magnetic properties of silicene-related systems present the diversified phenomena through the first-principles calculations. The critical factors, the group-IV monoelements, buckled/planar structures, stacking configurations, layer numbers, and van der Waals interactions of bilayer composites are taken into account simultaneously. The developed theoretical framework is responsible for the concise physical and chemical pictures. The delicate evaluations and analyses are conducted on the optimal lattices, the atom-& spin-dominated energy bands, the atom-, orbital-& spin-projected vanHove singularities, and the magnetic moments. Most importantly, they achieve the decisive mechanisms, the buckled/planar honeycomb lattices, the multi-/single-orbital hybridizations, and the significant/negligible spin-orbital couplings. Furthermore, we investigate the stackingconfiguration-induced dramatic transformations of the essential properties by the relative shift in bilayer graphene and silicene. The lattice constant, interlayer distance, the buckle height, and the total energy essentially depend on the magnitude 1 and direction of the relative shift: AA → AB → AA ′ → AA. Apparently, sliding bilayer systems are quite different between silicene and graphene in terms of electronic properties, strongly depending on the buckled/planar honeycomb lattices, the multi-/single-orbital hybridizations, the dominant/observable interlayer hopping integrals, and the significant/negligible spin interactions. The predicted results can account for the up-to-date experimental measurements.

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“…These structures were predicted to be stable by density functional theory, 1,2 and fabricated on metallic substrates amid intensive experimental pursuit over the past decade. [3][4][5][6][7][8][9][10][11] While synthesis of free-standing monolayers is still not accomplished, recent studies have shown that both silicene 12 and germanene 13 monolayers synthesized on metallic surfaces exhibit Dirac-like bands. Moreover, these hybrid structures were already used to fabricate transistors from both silicene 14 What sets silicene and germanene apart from their carbon counterpart 16 is that these structures exhibit a sublattice buckling, that is, the A and B sublattices of the honeycomb structure are vertically shifted relative to one another as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Resonance Raman Spectroscopy of Silicene and Germanene

2018

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We model Raman processes in silicene and germanene involving scattering of quasiparticles by, either, two phonons, or, one phonon and one point defect. We compute the resonance Raman intensities and lifetimes for laser excitations between 1 and 3 eV using a newly developed third-nearest neighbour tight-binding model parametrized from first principles density functional theory. We identify features in the Raman spectra that are unique to the studied materials or the defects therein. We find that in silicene, a new Raman resonance arises from the 2.77 eV π − σ plasmon at the M point, measurably higher than the Raman resonance originating from the 2.12 eV π plasmon energy. We show that in germanene, the lifetimes of charge carriers, and thereby the linewidths of the Raman peaks, are influenced by spin-orbit splittings within the electronic structure. We use our model to predict scattering cross sections for defect induced Raman scattering involving adatoms, substitutional impurities, Stone-Wales pairs, and vacancies, and argue that the presence of each of these defects in silicene and germanene can be qualitatively matched to specific features in the Raman response.

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Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB ₂

Cited by 16 publications

References 59 publications

Twelve inequivalent Dirac cones in two-dimensional ZrB2

Twelve inequivalent Dirac cones in two-dimensional ZrB2

Stacking-configuration-enriched essential properties in bilayer silicenes

Resonance Raman Spectroscopy of Silicene and Germanene

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Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2

Cited by 16 publications

References 59 publications

Twelve inequivalent Dirac cones in two-dimensional ZrB2

Twelve inequivalent Dirac cones in two-dimensional ZrB2

Stacking-configuration-enriched essential properties in bilayer silicenes

Resonance Raman Spectroscopy of Silicene and Germanene

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Product

Resources

About

Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB ₂