1989
DOI: 10.1021/ac00196a008
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Interdigitated gate electrode field effect transistor for the selective detection of nitrogen dioxide and diisopropyl methylphosphonate

Abstract: An Interdigitated gate electrode field effect transistor (IGE-FET) coupled to an electron beam evaporated copper phthalocyanlne thin film was used to selectively detect partper-billlon concentration levels of nitrogen dioxide (N02) and dlisopropyt methylphosphonate (DIMP). The sensor Is excited with a voltage pulse, and the timeand frequency-domain responses are measured. The envelopes of the magnitude of the normalized difference frequency spectrums reveal features that unambiguously distinguish NOz and DIMP … Show more

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Cited by 42 publications
(23 citation statements)
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“…A sensitive layer of an electron-beam evaporated copper phthalocyanine (CuPc) thin film has been used to detect part-per-billion concentration levels of nitrogen dioxide NO and diisopropyl methylphosphonate (DIMP) [85]. Another hygroscopic polymer, crosslinked cellulose acetate butyrate (CAB), has been used for humidity sensing [86].…”
Section: B Coatingsmentioning
confidence: 99%
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“…A sensitive layer of an electron-beam evaporated copper phthalocyanine (CuPc) thin film has been used to detect part-per-billion concentration levels of nitrogen dioxide NO and diisopropyl methylphosphonate (DIMP) [85]. Another hygroscopic polymer, crosslinked cellulose acetate butyrate (CAB), has been used for humidity sensing [86].…”
Section: B Coatingsmentioning
confidence: 99%
“…The advantage of this approach is an intimate contact between the electrodes and the substrate, which in this case also serves as a sensitive layer [93]. An electron beam thermal evaporation process followed by a conventional mask etching allows control of both the deposition rate and the thickness of the films [77], [85]. Gold and platinum electrodes normally used in the electronics industry offer the advantage of being inert and flexible [94].…”
Section: Electrodesmentioning
confidence: 99%
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“…Early work on FET gas sensors can be tracked back to 1980s. In a study by Kolesar et al [25] in 1989, IGE-FET was coupled to a thin film of copper phthalocyanine (CuPc), which selectively reacted with IGE-FET at ppb levels. Measurement was based on the sensitivity of the field effect transistor's output current to changes in the molecular structure or chemical composition of the thin film which covers the interdigitated gate electrode.…”
Section: Field Effect Transistor Detectionmentioning
confidence: 99%