Interdiffusion effects of heat treatment on GaxIn1-xSb diodes metallised with gold

Peransin, J.M.; Groubert, E.

doi:10.1049/el:19770504

Electron. Lett.

1977

DOI: 10.1049/el:19770504

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Interdiffusion effects of heat treatment on GaxIn1-xSb diodes metallised with gold

J.M. Peransin

E. Groubert

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1978

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“…Considerable metallic interdiffusion occurs in the ternary compounds. Microprobe analysis shows that whereas the diffusion coefficients of Ga and In in Au are large, that of Sb is negligibly small [6]. The contact process causes complexed solid solutions forming multilayer structures on both sides of the initial gold-semiconductor plane.…”

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confidence: 99%

Effect of contact alloying behaviour on the electrical characteristic of GaxIn1-xSb diodes with gold coating

Peransin

Bresse

Michel

et al. 1978

Rev. Phys. Appl. (Paris)

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Centre d'Etudes d'Electroniques des Solides associé au C.N.R.S., U.S.T.L., 34060 Montpellier, France Résumé. 2014 Nous étudions les changements de caractéristiques qui interviennent dans des diodes Au/GaxIn1-xSb montées par thermocompression durant une série de recuits. Nous examinons les effets du temps de recuit et de la hauteur de la température. Par des profiles de concentration en profondeur nous avons mis en évidence un effet de diffusion externe et deux régions distinctes dans le semi-conducteur. La région intermédiaire correspond à une diffusion rapide de l'or, nous pensons qu'elle est due à une zone endommagée par la thermocompression. La qualité des contacts, déterminée par des mesures de l'émission microonde et des courbes courant-tension, a été associée aux mesures métallurgiques pour déterminer des performances optimums. Abstract. 2014 This paper reports on the characteristic changes of Au/GaxIn1-xSb thermocompressed Gunn diodes after undergoing heating cycles. The effects of annealing time and temperature on metallurgical interdiffusion have been studied. By measuring the relative concentration depth profiles, both out-diffusion and two distinct depth regions inside the semiconductor were found. A rapid indiffusion of gold was associated to an intermediate region, we believe this may be due to a damaged zone by the thermocompression. The contact quality, characterised by current-voltage and microwave emission measurements, has been correlated to metallurgical transformations of contact layer in order to achieve optimum device performances.

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mentioning

confidence: 99%

Effect of contact alloying behaviour on the electrical characteristic of GaxIn1-xSb diodes with gold coating

Peransin

Bresse

Michel

et al. 1978

Rev. Phys. Appl. (Paris)

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Interdiffusion effects of heat treatment on GaxIn1-xSb diodes metallised with gold

Cited by 1 publication

References 2 publications

Effect of contact alloying behaviour on the electrical characteristic of GaxIn1-xSb diodes with gold coating

Effect of contact alloying behaviour on the electrical characteristic of GaxIn1-xSb diodes with gold coating

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