Interdiffusion during heteroepitaxial Au growth on Pd thin films by electroless Au plating (ELGP) at room temperature

Abstract

Electroless Au plating (ELGP) on Pd thin films is performed. The ELGP time dependence on the surface morphology is investigated by a scanning electron microscope. Continuous nucleation and growth of hemispherical Au islands are observed as the plating time increases. Heteroepitaxial growth of the electroless plated Au on the Pd surface is confirmed by cross-sectional scanning transmission electron microscope images. Cross-sectional energy-dispersive X-ray spectroscopy reveals interdiffusion between the Pd atoms and the plated Au atoms at room temperature, which allows the formation of Au–Pd alloys. The heteroepitaxial Au growth on Pd is significant for reducing contact resistance of Au/Pd structures.

Large coercivity of 13 kOe in L10-ordered CoPt on Si/SiO2 substrates by hydrogen annealing

“…8,44,45) However, L1 0 -ordering of CoPt on the amorphous SiO 2 surfaces of thermally oxidized Si substrates has been challenging because epitaxial growth or lattice-misfit-induced strain cannot be utilized for the growth of L1 0 -CoPt; thus, strict control of the annealing conditions or the choice of proper underlayers was necessary. 49) Recently, by using an EB evaporation method, [50][51][52][53][54][55] we demonstrated the formation of L1 0 -CoPt in equiatomic Co/Pt multilayer thin films on Si/SiO 2 substrates by vacuum annealing, and performed analysis by grazing incidence Xray diffraction (GI-XRD), vibrating sample magnetometer (VSM), and scanning electron microscope (SEM). 56,57) In Pt (6.6 nm)/Co (4.8 nm) bilayer thin films, graded films consisting of L1 2 -ordered Co 3 Pt, L1 0 -CoPt, and L1 2 -ordered CoPt 3 were found to be formed during the interdiffusion of the equiatomic bilayer by rapid thermal annealing (RTA) at 800 °C for 30 s, where the annealed films showed an in-plane H c of 2.1 kOe and a continuous film structure.…”

Formation of L10-ordered CoPt during interdiffusion of electron-beam-deposited Pt/Co bilayer thin films on Si/SiO2 substrates by rapid thermal annealing

“…Therefore, for compatibility with Si technology, lithography-friendly deposition methods should be used for the preparation of ordered CoPt with a 10 nm scale linewidth on Si substrates. By using the EB evaporation method [40][41][42], multilayers of Co and Pt can be prepared using individual deposition targets. Due to these layered structures, it is essential to study the alloying properties of Co and Pt based on the interdiffusion induced by annealing towards the ordering of CoPt.…”

Nanostructure-induced L10-ordering of twinned single-crystals in CoPt ferromagnetic nanowires

“…43 Recently, we have developed a fabrication process for Ptbased nanogap electrodes by a li-off process that combines electron-beam lithography (EBL) and electron-beam (EB) evaporation. [44][45][46][47][48][49] Pt-based nanogap electrodes with an ultrane linewidth of 10 nm were successfully fabricated by optimizing the fabrication conditions. 44 We also reported the L1 0 -ordering of Co/Pt multilayer thin lms on thermally oxidized Si (Si/SiO 2 ) substrates by EB evaporation and annealing processes, which was characterized by scanning electron microscope (SEM), grazing incidence X-ray diffraction (GI-XRD), and vibrating sample magnetometer (VSM).…”

“…Recently, we have developed a fabrication process for Pt-based nanogap electrodes by a lift-off process that combines electron-beam lithography (EBL) and electron-beam (EB) evaporation. 44–49 Pt-based nanogap electrodes with an ultrafine linewidth of 10 nm were successfully fabricated by optimizing the fabrication conditions. 44…”