Interdiffusion and stress development in Ni-Cu thin film diffusion couples

Sheng, J.; Welzel, U.; Mittemeijer, E. J.

doi:10.1524/zksu.2009.0036

Cited by 19 publications

(10 citation statements)

References 10 publications

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“…The DIR process is mainly discussed in binary systems exhibiting a wide mutual solubility range above either the miscibility gap or the critical temperature of ordering (e.g. Cu/Pd [6], Au/Cu [7], Ag/Pd [8], Ni/Cu [3,9]). Furthermore, intermixing in nanocrystalline systems with reactive diffusion at low temperatures was investigated recently (see e.g.…”

Section: Introductionmentioning

confidence: 99%

Grain boundary diffusion induced reaction layer formation in Fe/Pt thin films

et al. 2013

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The solid-state reaction in Pt(15 nm)/Fe(15 nm) and Pt(15 nm)/Ag(10 nm)/Fe(15 nm) thin films after postannealing at 593 K and 613 K for different annealing times has been studied. The structural properties of these samples were investigated by various methods including depth profiling with secondary neutral mass spectrometry, transmission electron microscopy, and X-ray diffraction. It is shown that after annealing at the above temperatures where the bulk diffusion processes are still frozen, homogeneous reaction layers of FePt and FePt with about 10 at.% Ag, respectively, have been formed. Corresponding depth profiles of the element concentrations revealed strong evidence that the formation mechanism is based on a grain boundary diffusion induced solid-state reaction in which the reaction interfaces sweep perpendicularly to the original grain boundary. Interestingly, X-ray diffraction indicated that in both thin-film systems after the solid-state reaction the ordered L1 0 FePt

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Section: Introductionmentioning

confidence: 99%

Grain boundary diffusion induced reaction layer formation in Fe/Pt thin films

et al. 2013

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“…On the one hand, the stress state contributes to the thermodynamic potentials of atomic species and affects the activation energy of the diffusion coefficient during the diffusion processes. However, the diffusion process changes the stress state owing to compositional variation (the difference in their volumes) [16,17]. Larche and Cahn constructed a thermodynamic theory of stressed solids based on the socalled network solid model in which the diffusion potential gradient acts as a driving force rather than a chemical potential [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics simulation and thermodynamics calculation on surface segregation in Ni-Cu nano-films under stress

Lian¹,

Wang²,

Swart³

et al. 2022

Phys. Scr.

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The surface segregation of Cu atoms in a Ni-Cu system was investigated using molecular dynamics simulations. Thermodynamic calculations were performed to verify the results of the molecular dynamics simulations. For the thermodynamic calculations, a model for evaluating the influence of stress on surface segregation was developed using the modified Darken model in combination with the broken-bond model. Using molecular dynamics simulations, it was found that the enrichment of Cu atoms occurred for a free-standing Ni-10 at.% Cu film consisting of 20 layers. Simultaneously, the stress distribution across the Ni-Cu thin film is obtained. The thermodynamic calculation results show that the influence of stress on the surface segregation cannot be ignored because of the considerable surface stress. Surface tension stress promotes the surface segregation of copper in Cu-Ni alloys due to the larger lattice parameter of copper than nickel, which leads to the reduction of surface strain energy. When the thickness is greater than 31 nm (or the number of layers exceeds 89), the size effect disappears, i.e., the surface concentration doesn’t increase with the increase of thickness. The calculation results obtained by the Bragg-William equation used for the surface segregation in equilibrium are in good agreement with the thermodynamic calculation and molecular dynamics simulation results.

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“…In addition, it is difficult to make a distinction between DIR and DIGM experimentally [ 16 ]. DIR has mainly been investigated in binary systems with a wide mutual solubility range above either the miscibility gap or the critical temperature of ordering (e.g., in Cu/Pd [ 16 ], Au/Cu [ 15 ], Ag/Pd [ 7 ], Ni/Cu [ 17 – 19 ], NiPd [ 20 ]). Less works have been devoted to systems with reactive diffusion [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

Formation of Cu_xAu₁₋_x phases by cold homogenization of Au/Cu nanocrystalline thin films

Tynkova¹,

Katona²,

Langer³

et al. 2014

Beilstein J. Nanotechnol.

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SummaryIt is shown, by using depth profiling with a secondary neutral mass spectrometer and structure investigations by XRD and TEM, that at low temperatures, at which the bulk diffusion is frozen, a complete homogenization can take place in the Cu/Au thin film system, which leads to formation of intermetallic phases. Different compounds can be formed depending on the initial thickness ratio. The process starts with grain boundary interdiffusion, which is followed by a formation of reaction layers at the grain boundaries that leads to the motion of the newly formed interfaces perpendicular to the grain boundary plane. Finally, the homogenization finishes when all the pure components have been consumed. The process is asymmetric: It is faster in the Au layer. In Au(25nm)/Cu(50nm) samples the final state is the ordered AuCu3 phase. Decrease of the film thicknesses, as expected, results in the acceleration of the process. It is also illustrated that changing the thickness ratio either a mixture of Cu-rich AuCu and AuCu3 phases (in Au(25nm)/Cu(25nm) sample), or a mixture of disordered Cu- as well as Au-rich solid solutions (in Au(25nm)/Cu(12nm) sample) can be produced. By using a simple model the interface velocity in both the Cu and Au layers were estimated from the linear increase of the average composition and its value is about two orders of magnitude larger in Au (ca. 10−11 m/s) than in Cu (ca. 10−13 m/s).

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Interdiffusion and stress development in Ni-Cu thin film diffusion couples

Cited by 19 publications

References 10 publications

Grain boundary diffusion induced reaction layer formation in Fe/Pt thin films

Grain boundary diffusion induced reaction layer formation in Fe/Pt thin films

Molecular dynamics simulation and thermodynamics calculation on surface segregation in Ni-Cu nano-films under stress

Formation of Cu_xAu₁₋_x phases by cold homogenization of Au/Cu nanocrystalline thin films

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Interdiffusion and stress development in Ni-Cu thin film diffusion couples

Cited by 19 publications

References 10 publications

Grain boundary diffusion induced reaction layer formation in Fe/Pt thin films

Grain boundary diffusion induced reaction layer formation in Fe/Pt thin films

Molecular dynamics simulation and thermodynamics calculation on surface segregation in Ni-Cu nano-films under stress

Formation of CuxAu1−x phases by cold homogenization of Au/Cu nanocrystalline thin films

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Formation of Cu_xAu₁₋_x phases by cold homogenization of Au/Cu nanocrystalline thin films