Grain boundary diffusion induced reaction layer formation in Fe/Pt thin films

Katona, G.L.; Vladymyrskyi, І. А.; Makogon, Iu. M.; Sidorenko, S. I.; Kristály, Ferenc; Daróczi, Lajos; Csík, A.; Liebig, Andreas; Beddies, G.; Albrecht, Manfred; Beke, Dezső L.

doi:10.1007/s00339-013-7949-z

Cited by 27 publications

(21 citation statements)

References 32 publications

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“…It is worth noting that in [17] and [21] although even the bulk interdiffusion coefficients were estimated from the near interface region, we prefer the explanation offered above 8 (see also our estimations for the bulk diffusivities in [19], which showed that the volume diffusion was frozen in the above temperature range).…”

Section: Summary Of Resultsmentioning

confidence: 99%

“…in Pd/Cu [18] and Pt/Fe as well as Pt/Ag/Fe [19] systems too. Figure 4 shows our results obtained at 523 K in Pd(30nm)/Cu(50nm) system deposited onto MgO substrate [18].…”

Section: Summary Of Resultsmentioning

confidence: 99%

“…In this paper, by re-examining the discussions of the results of [3] and [17] (on Co/Si and Cu/Pd systems, respectively) and by using also our results obtained in Pd/Cu [18] as well as for Pt/(Ag)/Fe systems [19], general features of low temperature reaction layer formations are summarized. This process can be called Grain Boundary Diffusion Induced Reaction layer formation (GBIREAC) and can lead to formation of a completely reacted nanocrystalline thin film into AnB1-n intermetallic layer, where n depends on the initial film thicknesses and grain sizes.…”

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confidence: 99%

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Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Beke

Langer

Molnár

et al. 2013

Philosophical Magazine

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Kinetic pathways of diffusion and solid state reactions in nanostructured thin film systemsMass transport and solid state reactions in nanocrystalline thin films is reviewed.It is illustrated that diffusion along different grain boundaries, GB, can have important effects on the overall intermixing process between two pure films.These processes can be well characterized by a bimodal GB network, with different (fast and slow) diffusivities. First the atoms migrate along fast GBs (triple junctions) and accumulate at the film surface. These accumulated atoms form a secondary diffusion source for back diffusion along slow boundaries.Thus the GBs of the thin films can be gradually filled up with the diffusing atoms and composition depth profiles reflect the result of these processes. Similar process can be observed in binary systems with intermetallic layers: instead of nucleation and growth of the reaction layer at the initial interface, the reaction takes place in the GBs and the amount of the product phase growths by the motion of its interfaces perpendicular to the GBs. Thus, the entire layer of the pure parent films can be consumed by this GB diffusion induced solid state reaction (GBDIREAC), and a fully homogeneous product layer can be obtained.

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Section: Summary Of Resultsmentioning

confidence: 99%

“…in Pd/Cu [18] and Pt/Fe as well as Pt/Ag/Fe [19] systems too. Figure 4 shows our results obtained at 523 K in Pd(30nm)/Cu(50nm) system deposited onto MgO substrate [18].…”

Section: Summary Of Resultsmentioning

confidence: 99%

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confidence: 99%

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Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Beke

Langer

Molnár

et al. 2013

Philosophical Magazine

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“…3(e)), in the place of the original Pt layer instead at the original Pt/ 56 Fe interface. The formation of this inside the original Pt layer can be interpreted by the so-called grain boundary diffusion induced solid state reaction [33]. Furthermore, the observed minimum of the 56 Fe composition in Fig.…”

Section: Accepted Manuscriptmentioning

confidence: 88%

Nanoscale diffusion in Pt/56Fe/57Fe thin-film system

et al. 2015

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Low-temperature diffusion of Fe in Pt/ 56 Fe/ 57 Fe thin films (grown on MgO (100) substrate) was investigated between 703 K and 813 K using secondary neutral mass spectrometry. The activation energy of the effective interdiffusion coefficients, evaluated by the -centre-gradient‖ method, is 1.53±0.25 eV reflecting a strong contribution from grain boundaries. This is also supported by the observed deep penetrations of Pt into the 56 Fe layer, from which the grain boundary diffusion coefficients for Pt in Fe were also estimated and 1.45±0.25 eV activation energy was obtained. A simple model, including the effect of grain boundaries to the overall intermixing at the original sharp interfaces in nanocrystalline films, is developed. This predicts that at short annealing times the grain boundary diffusion dominates, and bulk diffusion coefficients can be determined only in long time limit. At intermediate annealing times, when the grain boundaries are saturated but the bulk diffusion is still negligible, there are no changes in the composition profiles.This yields good qualitative agreement with the experimental data and offers explanation for the time and temperature dependence of the interdiffusion coefficients obtained in similar systems.

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“…In DIGM the grain boundaries move perpendicular to the original boundary plane and leave an alloyed zone behind. Furthermore it was also illustrated [5][6][7][8][9][10][11][12] that complete homogenization of bilayered films can also happen by formations of reaction products along the grain boundaries, (grain boundary diffusion induced reaction, GBDIREAC [4]). The most important difference, as compared to the well-investigated cases of DIGM/DIR in systems forming solid solutions, lies in the formation of new phases.…”

Section: Introductionmentioning

confidence: 99%

Low temperature homogenization in nanocrystalline PdCu thin film system

Molnár

Katona

Langer

et al. 2015

Mater. Res. Express

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AbstactDiffusion and solid state reactions were investigated in Pd-Cu nanocrystalline films by means of secondary neutral mass spectrometry depth profiling technique. The heat treatments were made at low temperatures (where the volume diffusion was frozen in) for long enough annealing times to reach saturation. In the early stage there is a grain boundary interdiffusion. At longer times first a Pd plateau developed inside the Cu layer. Later on the Cu penetration was also more and more extended in the Pd, even the average composition of Cu in Pd became higher than the average Pd composition in Cu. Depending on the ratio of the initial thicknesses, the system (for thickness ratios corresponding to 50/50 Cu/Pd or to 75/25 Cu/Pd) arrived either at the mixture of pure Pd and β-CuPd phase or to the mixture of α′-Cu 3 Pd and β-CuPd phases, respectively, as dictated by the phase diagram. The process is interpreted as grain boundary diffusion induced solid state reaction.

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Grain boundary diffusion induced reaction layer formation in Fe/Pt thin films

Cited by 27 publications

References 32 publications

Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Nanoscale diffusion in Pt/56Fe/57Fe thin-film system

Low temperature homogenization in nanocrystalline PdCu thin film system

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