Interband Transitions and Exciton Effects in Semiconductors

Welkowsky, M.; Braunstein, R.

doi:10.1103/physrevb.5.497

Cited by 130 publications

(17 citation statements)

References 35 publications

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“…The symmetry reduction remove the degeneracy of the four equivalent bands of two sets. As mentioned above, Δ r/r is related to Δ ε ; therefore, the line shape also depends on the symmetry of CP [21]. One electron approximation cannot explain the lifetime broadening; thus, it is suggested that Coulomb interaction should be taken into consideration [22].…”

Section: Resultsmentioning

confidence: 99%

In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces

Chen

et al. 2013

Nanoscale Res Lett

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The in-plane optical anisotropy (IPOA) in InAs/GaSb superlattices has been studied by reflectance difference spectroscopy (RDS) at different temperatures ranging from 80 to 300 K. We introduce alternate GaAs- and InSb-like interfaces (IFs), which cause the symmetry reduced from D2d to C2v. IPOA has been observed in the (001) plane along [110] and [1false1¯0] axes. RDS measurement results show strong anisotropy resonance near critical point (CP) energies of InAs and GaSb. The energy positions show red shift and RDS intensity decreases with the increasing temperature. For the superlattice sample with the thicker InSb-like IFs, energy positions show red shift, and the spectra exhibit stronger IPOA. The excitonic effect is clearly observed by RDS at low temperatures. It demonstrates that biaxial strain results in the shift of the CP energies and IPOA is enhanced by the further localization of the carriers in InSb-like IFs.

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Section: Resultsmentioning

confidence: 99%

In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces

Chen

et al. 2013

Nanoscale Res Lett

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“…R t of polished c-Si decreases with wave length and shows a peak (;380 nm) which corresponds to C 259 -C 15 direct transition. 31 Meanwhile, R dt of c-Si shows a step (between 700 and 800 nm) which corresponds to C 259 -L 1C indirect transition. 32 The spectral shapes change drastically for SiNWs.…”

Section: Methodsmentioning

confidence: 99%

Optical properties of Si nanowires: Dependence on substrate crystallographic orientation and light polarization

et al. 2015

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Optical properties of Si nanowire (SiNW) arrays prepared on p-doped Si(111) and Si(100) substrates were studied. SiNWs were synthesized by self-assembly electroless metal deposition nanoelectrochemistry in an ionic silver HF solution through selective etching. Total reflectance (R t ) and total diffuse reflectance (R dt ) of SiNWs change drastically in comparison to polished Si. To understand these changes, diffuse reflectance (R d ) with polarized incident light was studied. For samples prepared on Si (111), the wave length integrated R d (wIRd) shows maxima at certain angles of incidence h, regardless of the incident light polarization. For samples prepared on Si(100), wIRd increases with h and depends on incident light polarization. Also, R d spectra show structures due to interference effects. Therefore, SiNWs prepared on Si(100) can be considered as thin films whose refractive index depends on light polarization. Moreover, R dt of SiNWs prepared on Si(111) can be modeled as an ensemble of diffuse reflectors.

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“…Semiconductors have bands instead of energy levels, and there is a mixing of these energies due to long-range Coulomb interactions. This leads to, among other effects, the phenomenon of excitonic quantum beats and the excitonic optical Stark effect [4][5][6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Band-anisotropy induced Bloch–Siegert shift in graphene

Kumar

Enamullah

et al. 2014

J. Opt. Soc. Am. B

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In this work, we study the well-known phenomenon of the Bloch-Siegert shift, paying special attention to the change in the resonance condition of anomalous Rabi oscillations that are peculiar to graphene. The inclusion of frequency doubling (counter-rotating terms) in the conventional rotating wave approximation leads to a rather small shift in the resonance condition which forms the conventional Bloch-Siegert shift. In case of anomalous Rabi oscillations, however, band anisotropy caused by the inclusion of next-nearest neighbor hopping together with frequency doubling or the Rashba effect leads to a Bloch-Siegert shift which is quite substantial (in percentage terms, actually infinite), lending credence to the claim that the anomalous Rabi oscillation is sensitive to qualitative changes in the low energy band structure of graphene and as such is a useful indicator of the chiral massless Dirac fermion nature of quasiparticles in graphene.

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Interband Transitions and Exciton Effects in Semiconductors

Cited by 130 publications

References 35 publications

In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces

In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces

Optical properties of Si nanowires: Dependence on substrate crystallographic orientation and light polarization

Band-anisotropy induced Bloch–Siegert shift in graphene

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