The amorphous silicon nanoparticles (Si NPs) embedded in silicon nitride (SiNx) films prepared by helicon wave plasma-enhanced chemical vapor deposition (HWP-CVD) technique are studied. From Raman scattering investigation, we determine that the deposited film has the structure of silicon nanocrystals embedded in silicon nitride (nc-Si/SiNx) thin film at a certain hydrogen dilution amount. The analysis of optical absorption spectra implies that the Si NPs is affected by quantum size effects and has the nature of an indirect-band-gap semiconductor. Further, considering the effects of the mean Si NP size and their dispersion on oscillator strength, and quantum-confinement, we obtain an analytical expression for the spectral absorbance of ensemble samples. Gaussian as well as lognormal size-distributions of the Si NPs are considered for optical absorption coefficient calculations. The influence of the particle size-distribution on the optical absorption spectra was systematically studied. We present the fitting of the optical absorption experimental data with our model and discuss the results.
Hydrogenated amorphous silicon (a-Si:H) films were deposited by reactive facing target sputtering (FTS) technique with a mixture of Ar and H 2 reaction gas. Fourier transform infrared (FTIR) absorption, Raman scattering and ultraviolet-visible optical absorption are used to investigate the microstructure and optical properties of the deposited films. The decrease of the concentration of bonded hydrogen, especially that of (Si-H 2 ) n with increasing substrate temperature (Ts), was observed in FTIR spectra, suggesting the atomic density increases and the concentration of microvoids decrease in a-Si:H films. The increase of both the short range order and the intermediate range order of amorphous network for a-Si:H films were verified by Raman scattering spectra, in which increasing Ts decreasing the band width of TO and the scattering intensity ratio I TA /I TO were obtained. All above results clarify the effect of increasing Ts on the microstructure amelioration for a-Si:H films. The reduction of disordered domains is correlated with the film growing process, where the increased surface diffusion mobility and etching of weak bonds is induced by increasing Ts. Furthermore, analysis of optical absorption indicates that the films with a lower optical band gap and a narrower band edge can be obtained by this FTS technique. hydrogenated amorphous silicon, facing target sputtering, structural inhomogeneities, microvoids PACS: 81.05.Gc, 81.15.Cd, 78.30.Er
We report the preparation of silicon nanocrystals with efficient ultraviolet luminescence by nanosecond pulsed laser ablation in de-ionized water at a high laser fluence condition. Atomic force microscopy results show that nano-grains form in the process of laser ablation. Fourier transform infrared spectroscopy analyses indicate that silicon nanocrystals are formed and partially oxidized during synthesis. The photoluminescence measurement and the ultraviolet-visible transmittance spectroscopy of the samples prepared at various fluences reveal that all the prepared samples present an efficient ultraviolet emission at room temperature and it can be attributed to the quantum confinement effect and surface defect states. The emission wavelength of silicon nanocrystals is far shorter than visible light, which means potential applications in optoelectronic devices.
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