Interband transition energies in zinc‐blende A³ B⁵ compounds

Abstract

On the surface of this zone the energy gap remains relatively constant in the zincblende semiconductors (3). As it i s discussed earlier (4), we take a s a good approximation of this energy gap the average interband transition energy E2 of the direct transitions from the X state of the Brillouin zone to the XI and X3 states.It may be decomposed into contributions due to the symmetric and antisymmetric parts of the crystalline potential (5). Van Vechten denotes these contributions by E and C , reepectively. We may now write 3 g 5 h