Interband spin–orbit coupling between anti-parallel spin states in Pb quantum well states

Slomski, Bartosz; Landolt, G.; Muff, Stefanie; Meier, Fabian; Osterwalder, Jürg; Dil, J. Hugo

doi:10.1088/1367-2630/15/12/125031

Cited by 24 publications

(31 citation statements)

References 62 publications

(93 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The altered spin topology can be reconciled via SOC-induced hybridization of the SR and surface states [22]. A similar interband hybridization and spin reorientation has been observed in 2D Rashba systems [33,34]. Since on Te-capped samples the surface states are quenched, the spin topology below E F reduces into a typical Rashba-like arrangement as seen in Fig.…”

supporting

confidence: 61%

Disentangling bulk and surface Rashba effects in ferroelectricα-GeTe

Volfová²,

et al. 2016

View full text Add to dashboard Cite

Macroscopic ferroelectric order in α-GeTe with its noncentrosymmetric lattice structure leads to a giant Rashba spin splitting in the bulk bands due to strong spin-orbit interaction. Direct measurements of the bulk band structure using soft x-ray angle-resolved photoemission (ARPES) reveals the three-dimensional electronic structure with spindle torus shape. By combining high-resolution and spin-resolved ARPES as well as photoemission calculations, the bulk electronic structure is disentangled from the two-dimensional surface electronic structure by means of surface capping, which quenches the complex surface electronic structure. This unravels the bulk Rashba-split states in the ferroelectric Rashba α-GeTe(111) semiconductor exhibiting a giant spin splitting with Rashba parameter α R around 4.2 eVÅ, the highest of so-far known materials. DOI: 10.1103/PhysRevB.94.205111 In spintronics an important goal is to be able to control the spin of the electron in solids without applying magnetic fields [1,2]. The most promising mechanism is based on the Rashba effect [3] and the subsequent spin precession induced in such systems [4]. While most research has previously focused on 2D electron systems [5,6], recently a threedimensional (3D) form of such Rashba effect was found in a series of bismuth tellurohalides BiTeX (X = I, Br, or Cl) [7][8][9][10][11][12]. Although these materials exhibit a very large spin splitting, they lack an important property concerning functionalization, namely, the possibility to switch or tune the spin texture. This limitation can be overcome in a new class of functional materials displaying Rashba splitting coupled to ferroelectricity, the so-called ferroelectric Rashba semiconductors (FERS) [13,14].Recent photoemission experiments on α-GeTe-the stable rhombohedral room temperature configuration of the GeTe phase change material [15]-indicate that this system is a hallmark candidate for entanglement of the ferroelectric and spin-orbit order [16,17]. Due to the giant Rashba splitting spin injection from magnetic systems into GeTe appears viable in order to achieve spin-to-charge conversion [18]. Therefore, ferroelectric [13] or multiferroic [19] Rashba semiconductors bring new multifunctional assets for spintronic devices. A crucial issue for the understanding of FERS is to disentangle the Rashba effect in the bulk caused by the bulk ferroelectric lattice distortion and surface effects arising from particular surface terminations and/or possible band bendings. This represents a major challenge for surface sensitive techniques such as angle-resolved photoemission (ARPES). For this reason up to now ARPES measurements on α-GeTe surfaces performed in the surface-sensitive UV regime have been dominated by surface effects [16,17] and clear information of the three-dimensional bulk electronic structure and its spin texture has not been obtained.

show abstract

supporting

confidence: 61%

Disentangling bulk and surface Rashba effects in ferroelectricα-GeTe

Volfová²,

et al. 2016

View full text Add to dashboard Cite

show abstract

“…The spin splitting of the QWSs of Pb films on Si(111) is likewise an effect of SO coupling in an inversion asymmetric environment that can be observed in spin-resolved ARPES measurements [70]. Slomski et al [84] observe a hybridization between such Rashba-split bands of opposite spin polarization, indicating that interband SO coupling is important in the interaction of these QWSs. DFT calculations and spin-resolved ARPES experiments demonstrate this spin-mixing effect mediated by SO coupling in Pb films on Si.…”

mentioning

confidence: 85%

Focus on the Rashba effect

2015

View full text Add to dashboard Cite

The Rashba effect, discovered in 1959, continues to supply fertile ground for fundamental research and applications. It provided the basis for the proposal of the spin transistor by Datta and Das in 1990, which has largely inspired the broad and dynamic field of spintronics. More recent developments include new materials for the Rashba effect such as metal surfaces, interfaces and bulk materials. It has also given rise to new phenomena such as spin currents and the spin Hall effect, including its quantized version, which has led to the very active field of topological insulators. The Rashba effect plays a crucial role in yet more exotic fields of physics such as the search for Majorana fermions at semiconductorsuperconductor interfaces and the interaction of ultracold atomic Bose and Fermi gases. Advances in our understanding of Rashba-type spin-orbit couplings, both qualitatively and quantitatively, can be obtained in many different ways. This focus issue brings together the wide range of research activities on Rashba physics to further promote the development of our physical pictures and concepts in this field. The present Editorial gives a brief account on the history of the Rashba effect including material that was previously not easily accessible before summarizing the key results of the present focus issue as a guidance to the reader.

show abstract

“…For a more systematic analysis and in order to summarize all measurements in vector plots, we have fitted the data with 4 peaks (A-D) to account for the bulk states and the surface resonances. However, one has to be careful to make a rigid connection between the peaks and their bulk or surface resonance character because the states are strongly hybridized and their spin direction is influenced by interband spin-orbit coupling [25]. Based on our previous photoemission studies [4,11], a simplified α-GeTe band model relevant for our operando SARPES studies, denoted in In order to systematically test the magnitude of the spin rotation with poling polarity, in Fig.…”

Section: Electric Control Of Spin Orientationmentioning

confidence: 99%

Operando Imaging of All-Electric Spin Texture Manipulation in Ferroelectric and Multiferroic Rashba Semiconductors

et al. 2018

View full text Add to dashboard Cite

The control of the electron spin by external means is a key issue for spintronic devices. Using spin-and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric α-GeTe and multiferroic Ge 1−x Mn x Te. We demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal. Additionally, we are also able to follow the switching pathway in detail. In multiferroic Ge 1−x Mn x Te operando SARPES reveals switching of the perpendicular spin component due to electric-field-induced magnetization reversal. This provides firm evidence of magnetoelectric coupling which opens up functionality with a multitude of spin-switching paths in which the magnetic and electric order parameters are coupled through ferroelastic relaxation paths. This work thus provides a new type of magnetoelectric switching intertwined with Rashba-Zeeman splitting in a multiferroic system.

show abstract

Interband spin–orbit coupling between anti-parallel spin states in Pb quantum well states

Cited by 24 publications

References 62 publications

Disentangling bulk and surface Rashba effects in ferroelectricα-GeTe

Disentangling bulk and surface Rashba effects in ferroelectricα-GeTe

Focus on the Rashba effect

Operando Imaging of All-Electric Spin Texture Manipulation in Ferroelectric and Multiferroic Rashba Semiconductors

Contact Info

Product

Resources

About