Interband photoconductivity in layer semiconductors GaSe, InSe and GaS

Alekperov, O. Z.; Godjaev, M.O.; Zarbaliev, M. Z.; Suleimanov, R. A.

doi:10.1016/0038-1098(91)90428-x

Cited by 30 publications

(22 citation statements)

References 6 publications

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“…Comparison of curves 1 and 2 shows that decrease of PC in whole region from ITE up to 4.5eV is due to photo excitation of heavy carriers which after photoexcitation are bounded to ITE. The tendency of smoothing of PC spectral dependence of photo resistors in this region with increase of temperature [6] also witnesses about this. In this case, the electron-hole capture cross section decrease with temperature and electric field.…”

Section: Methodssupporting

confidence: 56%

“…In last years SB of high gap semiconductors as GaN (E g ~ 3.5 eV), SiC (E g ~ 4 eV), AlGaN and their nanostructures [2][3][4][5] were used to shift the maximum of QE detectors to UV region. It was shown that for some of A 3 B 6 LS (InSe, GaSe and GaS) and their ternary 3 3 6 2 A B C analogs the UV QE of PC exceeds the band gap in many times [6][7][8].So, using of SB of 3 6 A B LS and their ternary analogs is an alternative way for creation of photo detectors in UV region.…”

Section: Introductionmentioning

confidence: 99%

“…Investigations of spectral dependences of absorption [9] and PC [6] of LS 3 6 A B InSe, GaSe and GaS show the existence of deep excitonic states sufficiently far from the band edge excitons. They are situated at quantum energies ~2.4eV and 2.9eV for InSe, 3.4eV and 3.9eV for GaSe and 4.1eV for GaS.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Intermediate type excitons in Schottky barriers of A ³ B ⁶ layer semiconductors and UV photodetectors

Alekperov¹,

Guseinov

Nadjafov

2006

Phys. Status Solidi (c)

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Photoelectric and photovoltaic spectra of Schottky barrier (SB) structures of InSe, GaSe and GaS layered semiconductors (LS) are investigated at quantum energies from the band edge excitons of corresponding materials up to 6.5eV. Spectral dependences of photoconductivity (PC) of photo resistors and barrier structures are strongly different at the quantum energies corresponding to the intermediate type excitons (ITE) observed in these semiconductors. It was suggested that high UV photoconductivity of А 3 В 6 LS is due to existence of high mobility light carriers in the depth of the band structure. It is shown that SB of semitransparent Au-InSe is high sensitive photo detector in UV region of spectra.

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Section: Methodssupporting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Intermediate type excitons in Schottky barriers of A ³ B ⁶ layer semiconductors and UV photodetectors

Alekperov¹,

Guseinov

Nadjafov

2006

Phys. Status Solidi (c)

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“…[122] For GaS and GaSe, this crystal structure leads to a band structure with dominant indirect transitions (indirect: 2.59 eV, direct 3.05 eV for GaS; indirect: 2.11 eV, direct 2.13 eV for GaSe). [127][128][129][130][131] The structure of GaTe is slightly different, leading to a dominant direct transition (1.7 eV). [132] Compounds with different stoichiometry (like In 2 Se 3 ) have a more complex layer structure ( Figure 12c) and a variety of structural phases influencing their electrical properties.…”

Section: Electrostatically Defined Pn Junctionsmentioning

confidence: 99%

Photocurrent generation with two-dimensional van der Waals semiconductors

et al. 2015

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Two-dimensional (2D) materials have attracted a great deal of interest in recent years. This family of materials allows for the realization of versatile electronic devices and holds promise for next-generation (opto)electronics. Their electronic properties strongly depend on the number of layers, making them interesting from a fundamental standpoint. For electronic applications, semiconducting 2D materials benefit from sizable mobilities and large on/off ratios, due to the large modulation achievable via the gate field-effect. Moreover, being mechanically strong and flexible, these materials can withstand large strain (>10%) before rupture, making them interesting for strain engineering and flexible devices. Even in their single layer form, semiconducting 2D materials have demonstrated efficient light absorption, enabling large responsivity in photodetectors. Therefore, semiconducting layered 2D materials are strong candidates for optoelectronic applications, especially for photodetection. Here, we review the state-of-the-art in photodetectors based on semiconducting 2D materials, focusing on the transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures.

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“…This causes photoresponse of device to be weak in the visible light region. On the other hand, InSe having similar band structure to GaSe has a narrow bandgap [14,17], which nearly overlaps perfectly the visible spectrum hence suitable for the above mentioned 2D layered materials [6].…”

Section: Introductionmentioning

confidence: 99%

The Impact of Doping on the Anti-Resonance Effects of A11g Mode of InSe

Zolfaghari

2019

IJOP

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A comparative study of antiresonance effects in InSe and InSe doped with GaS, using the resonant Raman spectroscopy is presented. The nonpolar optical phonon of 1 1g A symmetry in InSe exhibits a pronounced decrease in the Raman cross-section at excitation energy 2.585 eV. In InSe doped with GaS samples, it is found that the anti-resonance behavior decreases as doping contents are increased. To account these observations, a model is applied to explain and interpret the Raman intensity evolution versus incident photon energy. The agreement between theory and experiment is good.

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Interband photoconductivity in layer semiconductors GaSe, InSe and GaS

Cited by 30 publications

References 6 publications

Intermediate type excitons in Schottky barriers of A ³ B ⁶ layer semiconductors and UV photodetectors

Intermediate type excitons in Schottky barriers of A ³ B ⁶ layer semiconductors and UV photodetectors

Photocurrent generation with two-dimensional van der Waals semiconductors

The Impact of Doping on the Anti-Resonance Effects of A11g Mode of InSe

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Interband photoconductivity in layer semiconductors GaSe, InSe and GaS

Cited by 30 publications

References 6 publications

Intermediate type excitons in Schottky barriers of A 3 B 6 layer semiconductors and UV photodetectors

Intermediate type excitons in Schottky barriers of A 3 B 6 layer semiconductors and UV photodetectors

Photocurrent generation with two-dimensional van der Waals semiconductors

The Impact of Doping on the Anti-Resonance Effects of A11g Mode of InSe

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Product

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Intermediate type excitons in Schottky barriers of A ³ B ⁶ layer semiconductors and UV photodetectors

Intermediate type excitons in Schottky barriers of A ³ B ⁶ layer semiconductors and UV photodetectors