Interband mid-infrared lasers

Cerutti, L.; Vicet, A.; Tournié, E.

doi:10.1016/b978-0-08-102709-7.00003-6

Cited by 8 publications

(12 citation statements)

References 177 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7 shows the semi-logarithmic plot evolution of the threshold current with the temperature. This translates in a characteristic temperature T 0 = 85 K, a value comparable to values generally measured on GaSb LDs grown on their native substrates [2,3].…”

Section: Etched Vs Cleaved Laser Diode Cavitiessupporting

confidence: 71%

“…This figure shows that both cleaved-and etched-facet LDs behave in similar ways. The turn-on voltage is around 1 V and the series resistances are around 3 to 6 Ω, similar to values for GaSb-based LDs [2,3]. The threshold currents are in the 150-400 mA range for both types of facets.…”

Section: Etched Vs Cleaved Laser Diode Cavitiessupporting

confidence: 70%

“…It is thus well suited for implementing a variety of high societal-impact photonic sensors or devices. High efficiency GaSb-based laser diodes (LDs) are now available in this range [2,3] and their heterogeneous integration with Silicon-based platforms is under active consideration with the objective to develop compact, cost-effective, smart sensing systems based on Si photonic integrated circuits (PICs) [4].…”

Section: Introductionmentioning

confidence: 99%

“…Only recently were high-performance GaSb mid-IR LDs epitaxially integrated on on-axis (001)Si demonstrated [8]. These LDs were grown by molecular-beam epitaxy (MBE), the only technique to date able to grow high-performance GaSb-based light sources [2,3]. Still, all these lasers were discrete devices with Fabry-Pérot cavities formed by cleaving the III-V-on-Si epitaxial wafer, a technique obviously incompatible with any PIC strategy.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Monge-Bartolomé¹,

Cerba²,

Díaz-Thomas³

et al. 2020

Opt. Express

Self Cite

View full text Add to dashboard Cite

We report on 2.3-µm etched-cavity GaSb-based laser diodes (LDs) epitaxially integrated on on-axis (001)Si and benchmarked against their cleaved facet counterparts. The LDs were grown in two steps. First, a GaSb-on-Si template was grown by metal-organic vapor phase epitaxy (MOVPE) before the growth of the LD heterostructure by molecular-beam epitaxy. Different etched-facet geometries operate in continuous wave well above room temperature, and their performance are similar to those of cleaved-cavity LDs. These results show that etching mirrors is a viable route to form laser cavities in the GaSb technology and that MOVPE GaSb-on-Si templates are a suitable platform for optoelectronic devices overgrowth.

show abstract

Section: Etched Vs Cleaved Laser Diode Cavitiessupporting

confidence: 71%

Section: Etched Vs Cleaved Laser Diode Cavitiessupporting

confidence: 70%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Monge-Bartolomé¹,

Cerba²,

Díaz-Thomas³

et al. 2020

Opt. Express

Self Cite

View full text Add to dashboard Cite

show abstract

“…Introduction: GaSb-based semiconductor laser diodes (LDs) have progressively emerged as the best suited technology to fabricate devices emitting in the whole 2-3 μm wavelength range, which is of great interest because several molecules exhibit fingerprint absorption lines [1]. Indeed, depending on the objective, threshold current densities below 100 A.cm -2 , single mode emission or output powers in the Watt range can all be achieved with the GaSb technology [2,3]. However, despite the recent progress, there remain parameters to clarify.…”

mentioning

confidence: 99%

Impact of the ridge etching‐depth on GaSb‐based laser diodes

Monge-Bartolomé

Cerutti

Tournié

2021

Electronics Letters

Self Cite

View full text Add to dashboard Cite

We have fabricated from the same epitaxial wafer series of GaSb‐based Fabry–Pérot laser diodes emitting near 2.3 μm with different ridge etching‐depths. The analysis of the device performances allows quantifying the detrimental impact of deep ridge etching. The threshold current density is increased, whereas the external differential quantum efficiency is reduced, due to a reduced internal quantum efficiency and higher optical losses.

show abstract

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

et al. 2022

Self Cite

View full text Add to dashboard Cite

There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration of antimonide lasers, the only technology covering the whole mid-to-far-infrared spectral range. We explain how a dedicated molecular-beam epitaxy strategy allows for achieving high-performance GaSb-based diode lasers, InAs/AlSb quantum cascade lasers, and InAs/GaInSb interband cascade lasers by direct growth on on-axis (001)Si substrates, whereas GaAs-on-Si or GaSb-on-Si layers grown by metal-organic vapor phase epitaxy in large capability epitaxy tools are suitable templates for antimonide laser overgrowth. We also show that etching the facets of antimonide lasers grown on Si is a viable approach in view of photonic integrated circuits. Remarkably, this review shows that while diode lasers are sensitive to residual crystal defects, the quantum cascade and interband cascade lasers grown on Si exhibit performances comparable to those of similar devices grown on their native substrates, due to their particular band structures and radiative recombination channels. Long device lifetimes have been extrapolated for interband cascade lasers. Finally, routes to be further explored are also presented.

show abstract

Interband mid-infrared lasers

Cited by 8 publications

References 177 publications

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Impact of the ridge etching‐depth on GaSb‐based laser diodes

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Contact Info

Product

Resources

About