1968
DOI: 10.1016/0022-3697(68)90263-1
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Interband magneto-optical absorption in gallium arsenide

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Cited by 225 publications
(37 citation statements)
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“…As fitted to optical absorption measurements by Thurmond [5], the constants in eq (9) Blakemore has examined a number of attempts to determine the intrinsic carrier density in GaAs [6], and in his review article [3] proposes a modification of the density of states to account for the nonparabolicity of the conduction band. This proposal is based on Kane's [7] k • p perturbation approach to determining the band structure and Vrehen's [8] approximation for nonparabolicity in the energy range {E -Ec) - Long before the temperature reaches 1000 K, however, electrons begin to populate the and Xe conduction band minima. As Blakemore shows [3], this effect is important as the temperature increases above 400 K. For temperatures exceeding 900 K, the Lq conduction band contains more than half of all conduction electrons.…”
Section: Bandgap -Gaasmentioning
confidence: 99%
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“…As fitted to optical absorption measurements by Thurmond [5], the constants in eq (9) Blakemore has examined a number of attempts to determine the intrinsic carrier density in GaAs [6], and in his review article [3] proposes a modification of the density of states to account for the nonparabolicity of the conduction band. This proposal is based on Kane's [7] k • p perturbation approach to determining the band structure and Vrehen's [8] approximation for nonparabolicity in the energy range {E -Ec) - Long before the temperature reaches 1000 K, however, electrons begin to populate the and Xe conduction band minima. As Blakemore shows [3], this effect is important as the temperature increases above 400 K. For temperatures exceeding 900 K, the Lq conduction band contains more than half of all conduction electrons.…”
Section: Bandgap -Gaasmentioning
confidence: 99%
“…3.36). see eqs (7) and (8) relative error (6) Den8ity(ca-3)»,/,30X, '3 Energy (eV)',/,30X, '4 Degeneracy ' ,/,30X, 'B Replace entry' ,/,30X, '6 Delete entry',/) CALL PROMPTC Enter number (8) DN(SELECT) (7),B(7),C(7),D(7) REAL A1(7),B1(7),C1(7),D1(7) REAL A2(7),B2(7).D2(7) REAL A3(7),B3(7),D3(7) REAL A4(7),B4(7),D4 (7) (6) (1)). QR.…”
Section: Hole Effective Mass -Simentioning
confidence: 99%
“…This provides a pobsibihty for discarding the very rough technique of calculating the diamagnetic exciton (DE) binding energy RZ, proposed by Vrehen [6] for GaAs and employed by Weiler [37.…”
Section: Introductionmentioning
confidence: 99%
“…Both corrections are needed for GaAs; each leads to a magnetic field and/or energy-dependent effective mass of the conduction electrons. The correction for nonparabolicity has been obtained from the expression obtained by Vrehen,17 namely, that the corrected energy E is given by the expression EϭE 0 (1Ϫ␦E 0 /E g ), where E 0 is the energy calculated for a parabolic band, E g is the band-gap energy, and the parameter ␦ϭ0.83. The influence of the nonresonant electron-phonon interaction has been accounted for using the low-field analytical expressions given by Peeters and Devreese 18 with the electron-phonon interaction constant ␣ϭ0.066.…”
Section: ϫ3mentioning
confidence: 99%