The absorption and magnetoabsorption of a set of (In, Ga)As/GaAs quantum wells has been studied. The oscillatory structure of magnetoabsorption allows one to reconstruct the energy positions of the Landau levels of the HHlE1 and LHlE1 excitonic states, taking into account the exciton binding energies calculated variationally. We have found that the potential profile for light holes is nearly flat with small deviations towards the type II quantum well. Calculation taking account of a combined potential for light holes shows that the excitonic transitions associated with the light hole states remain spatially direct in the system under study due to the 'Coulomb well' effect (additional hole confinement in the Coulombic potential created by an electron). The oscillator strength of the transitions has been shown to be quite high, which is suppotted by the data available. Because of a rather high oscillator strength, one can expect the appearance of a doublet spectral StNCtUre of light-hole exciton absorption, which was formed by the second light-hole 'oscillatory' states in the combined quantum well potential.
The oscillatory absorption edge spectrum of InSb crystals exhibiting the discrete structure of the Wannier-Mott exciton a t H = 0 is studied a t 1.8 K in magnetic fields of up to 80 kOe.The experimental data obtained are analyzed with a computer taking into account the excitonic nature of the phenomenon and the effect on the Landau levels of the nonlocality of potential resulting from the electron4ectron exchange interaction. A set of band parameters i s presented which provides a minimum discrepancy between the theoretical and experimental spectra of not more than 0.65 meV per datum point: E,=23.42 eV, F = -
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