Interband electronic Raman scattering by a three‐band semiconductor in the presence of a resonant electromagnetic field

Abstract

The influence is investigated of a resonant electromagnetic field on the interband electronic Raman scattering of a three-band semiconductor with direct band gaps. Explicit expressions for the cross-sections are given. The form of the Raman spectra depends on the effective masses of electrons and holes.Der EinfluB eines elektromagnetischen Resonanzfeldes auf die Interband-Raman-Streuung im direkten Dreiband-Halbleiter wird untersucht. Explizite Ausdrucke fur die Wirkungsquerschnitte werden angegeben. Die Form der Raman-Spektren ist abhangig von den effektiven Massen der Elektronen und Locher.

Polariton theory of resonant electronic Raman scattering on neutral donor levels in semiconductors with a direct band gap

“…In this case we have the scattering on the impurity levels [18][19][20][21][22][23][24][25][26][27]. The role of different extemal electromagnetic fields on the electronic Raman scattering processes was also studied in details [28][29][30][31]. Recently Weisbuch and Ulbrich have investigated experimentally the resonant electronic Raman scattering on neutral donor levels at the energy of the incoming photon near that of the exciton [32].…”