Electronic Raman scattering on donor levels in three‐band semiconductors with direct band gaps

Abstract

A theory is presented of the electronic Raman scattering on shallow donor levels in three-band semiconductors with direct band gaps. Explicit expressions of the matrix elements of the transitions from the ground state to the first excited state and to the states of the continuous spectrum are derived. It is shown that the most important contribution to these matrix elements comes from the intermediate states in the higher conduction band and in the valence band.Eine Theorie der elektronischen Ramanstreuung fur den flachen Donator in einem Drei-Band-Halbleiter mit direkter Bandstruktur wird behandelt. Explizite Formeln der Matrixelemente der tfbergange vom Grundzustand in den ersten Anregungszustand und zu dem Kontinuumspektrum werden angegeben. Es wird gezeigt, da13 die Zwischenzustande in dem hoheren Leitungsband und Valenzband den wichtigsten Beitrag fur diese Matrixelemente liefern.

Electronic Raman Scattering of Polarized Light on Donor Levels in Semiconductors with Direct Band Gaps

“…The theory of the electronic Raman scattering on donor levels in a two-band multivalley semiconductor with the indirect band gap was developed by Colwell and Klein [23]. The same scattering process in three-band semiconductors with direct band gaps was studied theoretically in a recent paper by two of the authors [29]. It was shown that a t the energies of the incident photons near the value E , of the band gap the contribution of the intermediate states in the valence band to the cross-section are dominant, and the semiconductors can be considered to be two-band ones.…”

“…It was shown that a t the energies of the incident photons near the value E , of the band gap the contribution of the intermediate states in the valence band to the cross-section are dominant, and the semiconductors can be considered to be two-band ones. For simplicity, however, the authors of [29] considered only the niodel with non-degenerateenergy ba nds. I n this work we calculate the cross-sections of the electronic Raman scattering processes with the transition 1s --f 2s on donor levels in two-band semiconductors with zincblende structure and direct band gaps, taking into account the real symmetry properties of the degenerate valence bands.…”