On the Role of the Coulomb Interaction of Charge Carriers in the Electronic Raman Scattering on Donor Levels in Direct Band Gap Semiconductors

Abstract

The electronic Ramiln scattering of light on the donor levels in the semiconductors with direct hand gap is revised, taking into account approximately the Coulomb interaction between the charge carriers (conduction electron and hole). Except for the scattering in the resonance energy domain, where the polariton effect is essential, the influence of the Coulomb interaction of the charge carriers on the scattering cross section is not significant.