Interband cascade laser emitting at λ=3.75μm in continuous wave above room temperature

Kim, M.; Canedy, C. L.; Bewley, W. W.; Kim, C. S.; Lindle, J. R.; Abell, J.; Vurgaftman, I.; Meyer, J. R.

doi:10.1063/1.2930685

Cited by 130 publications

(55 citation statements)

References 19 publications

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“…4), shorter wavelength QCLs tend to suffer from inadequate conduction band offset and inter-valley carrier scattering, which degrade their high temperature performance. 4,5 InAs/GaInSb type-II "W" interband cascade lasers (ICLs) using spatially indirect transitions 6 and resonant interband carrier tunnelling 7 as studied in this work have yielded promising results in the 2.9 lm to 4.2 lm range 6,8 and recently operated in cw mode at ambient temperature. 8 Generally, the dominant non-radiative recombination process in interband MIR lasers is Auger recombination.…”

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confidence: 94%

“…4,5 InAs/GaInSb type-II "W" interband cascade lasers (ICLs) using spatially indirect transitions 6 and resonant interband carrier tunnelling 7 as studied in this work have yielded promising results in the 2.9 lm to 4.2 lm range 6,8 and recently operated in cw mode at ambient temperature. 8 Generally, the dominant non-radiative recombination process in interband MIR lasers is Auger recombination. 9,10 In an Auger process, instead of producing a photon the transition energy is gained by a third carrier that is excited to a higher energy state in the conduction band (CHCC), spin-orbit split off valence band (CHSH), or a light or heavy valence subband.…”

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confidence: 94%

“…Also, the CHSH process is eliminated due to the large spin-orbit band separation obtained for the InAs/ GaInSb quantum well type II band alignment. 8 The AlSb barriers effectively confine both electrons and holes, thereby providing a two-dimensional density of states and minimising carrier leakage. 13 While these advantages substantially lower the threshold current densities, ICLs nonetheless remain temperature sensitive with typical T 0 values of 45-50 K (Ref.…”

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confidence: 99%

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Temperature dependence of 4.1 μm mid-infrared type II “W” interband cascade lasers

Ikyo

Marko

Adams

et al. 2011

Applied Physics Letters

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The thermal properties of 5-stage “W” Interband-Cascade Lasers emitting at 4.1 μm at room temperature (RT) are investigated by measuring the lasing and spontaneous emission properties as a function of temperature and hydrostatic pressure up to 1 GPa. Experiments show that at RT more than 90% of threshold current of these devices is due to non-radiative loss processes. We also find that the threshold current density dependence on temperature can be fitted with a single exponential function over a wide temperature range with a characteristic temperature, T0, of 45 K. The relatively high temperature sensitivity in these devices is attributable to the large non-radiative current contribution coupled with non-pinning of the carrier density above threshold.

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confidence: 94%

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confidence: 94%

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confidence: 99%

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Temperature dependence of 4.1 μm mid-infrared type II “W” interband cascade lasers

Ikyo

Marko

Adams

et al. 2011

Applied Physics Letters

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“…The best result reported so far with this technology is cw operation at 300 K for a λ = 3.75-μm device with an optical power in excess of 10 mW. 44 …”

Section: Short-wavelength Mid-ir Qclsmentioning

confidence: 99%

High-performance midinfrared quantum cascade lasers

Capasso

2010

Opt. Eng

180

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Abstract. The design and operating principles of quantum cascade lasers (QCLs) are reviewed along with recent developments in high-power cw and broadband devices. Cw power levels of several watts at room temperature have been achieved at 4.6-μm wavelength; broadband single-mode tuning (≈400 cm −1 ) has been achieved using an external-cavity QCL with a grating as a tuning element. An alternative approach, consisting of a monolithically integrated array of single-mode QCLs individually currentdriven by a microcontroller, has led to broadband single-mode tuning over a range of 200 cm −1 without requiring the use of moving parts. This spectrometer on a chip holds promise for high-brightness compact tracegas sensors capable of operating in harsh environments. C 2010 Society of Photo-Optical Instrumentation Engineers.

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“…1 Over the last couple of years, there has been significant progress in laser performance leading to, for example, recent reports of room temperature cw lasing at 3.8 m from quantum cascade lasers, 2 at 3.75 m from interband cascade lasers, 3 and at 3.36 m from compressively strained type 1 quantum wells ͑QWs͒. 4 We have also previously reported lasing from simpler double heterostructures 5 and type I multi-quantumwell ͑MQW͒ lasers based on the GaInSb/AlGaInSb/AlInSb material system.…”

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GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers

Yin

Nash

Coomber

et al. 2008

Applied Physics Letters

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Photoluminescence ͑PL͒ from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 m, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with ϳ0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2990224͔Continuing interest in the development of III-V alloys for use in mid-infrared ͑3-5 m͒ light sources and detectors is driven by the extensive range of potential applications in this spectral region, including environmental gas monitoring, noninvasive medical diagnosis, tunable infrared spectroscopy, and free space optical communications.1 Over the last couple of years, there has been significant progress in laser performance leading to, for example, recent reports of room temperature cw lasing at 3.8 m from quantum cascade lasers, 2 at 3.75 m from interband cascade lasers, 3 and at 3.36 m from compressively strained type 1 quantum wells ͑QWs͒. 4 We have also previously reported lasing from simpler double heterostructures 5 and type I multi-quantumwell ͑MQW͒ lasers based on the GaInSb/AlGaInSb/AlInSb material system. 6 This material system has the potential advantages of being able to achieve band offsets suitable for electronic confinement and also provide sufficiently high compressive strain for lower threshold laser operation, 7 and we recently reported on the successful realization of midinfrared coherent emission from MQW diode lasers using this material system grown by molecular beam epitaxy ͑MBE͒ on GaAs substrates.6 However, to realize the advantages of this material system, a greater understanding of the optical properties of these MQWs is required, and in this paper we analyze the photoluminescence ͑PL͒ from the GaInSb MQWs in the active region, with the aim of investigating the effect of strain in the QWs on their optical properties. We also report preliminary measurements made on laser diodes fabricated from companion wafers and the materials parameters and theoretical model used to describe the PL results will be later applied to fully understand the properties of these lasers.

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Interband cascade laser emitting at λ=3.75μm in continuous wave above room temperature

Abstract: We report a five-stage interband cascade laser that operates at λ=3.75μm in cw mode up to a maximum temperature of 319K. With gold electroplating, epitaxial-side-up mounting, and one facet coated for high reflectivity, a 3mm×9.2μm ridge emits over 10mW of cw power at 300K.

Cited by 130 publications

References 19 publications

Temperature dependence of 4.1 μm mid-infrared type II “W” interband cascade lasers

Temperature dependence of 4.1 μm mid-infrared type II “W” interband cascade lasers

High-performance midinfrared quantum cascade lasers

GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers

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