Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 µm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an~100-µm-wide aperture and a 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 µm, 980 mW near 3 µm, 500 mW near 3.18 µm, and 360 mW near 3.25 µm at 17-20˝C-a nearly or more than twofold increase compared to previous state-of-the-art diode lasers. The utilization of the different quantum wells in the cascade laser heterostructure was demonstrated to yield wide gain lasers, as often desired for tunable laser spectroscopy. Double-step etching was utilized to minimize both the internal optical loss and the lateral current spreading penalties in narrow-ridge lasers. Narrow-ridge cascade diode lasers operate in a CW regime with~100 mW of output power near and above 3 µm and above 150 mW near 2 µm.