Interband absorption in charged Ge/Si type-II quantum dots

Yakimov, A. I.; Stepina, N. P.; Двуреченский, А. В.; Nikiforov, A. I.; Nenashev, A. V.

doi:10.1103/physrevb.63.045312

Cited by 53 publications

(28 citation statements)

References 21 publications

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“…The presence of strain would increase the electron-hole overlap for the spatially indirect exciton transition (Fig. 5(d)), which has been observed in Ge/Si quantum dots [53]. As a result, the spatially indirect exciton recombination is greatly enhanced and strong enough to be observed in the PL spectra.…”

Section: Resultsmentioning

confidence: 82%

Strain-induced spatially indirect exciton recombination in zinc-blende/wurtzite CdS heterostructures

Liu

Mata

et al. 2015

Nano Res.

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Strain engineering provides an effective mean of tuning the fundamental properties of semiconductors for electric and optoelectronic applications. Here we report on how the applied strain changes the emission properties of heterostructures consisting of different crystalline phases in the same CdS nanobelts. The strained portion was found to produce an additional emission peak on the low-energy side that was blueshifted with increasing strain. Furthermore, the additional emission peak obeyed the Varshni equation with temperature and exhibited the band-filling effect at high excitation power. This new emission peak may be attributed to spatially indirect exciton recombination between different crystalline phases of CdS. First-principles calculations were performed based on the spatially indirect exciton recombination, and the calculated and experimental results agreed with one another. Strain proved to be capable of enhancing the anti-Stokes emission, suggesting that the efficiency of laser cooling may be improved by strain engineering.

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Section: Resultsmentioning

confidence: 82%

Strain-induced spatially indirect exciton recombination in zinc-blende/wurtzite CdS heterostructures

Liu

Mata

et al. 2015

Nano Res.

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“…30 Such strain-induced interface localized states have also been predicted in InP/GaP QD [37][38][39] and SiGe/Si QD. [40][41][42] Nevertheless, it differs from a true type-II band alignment such as GaSb/GaAs QD 43 in which the electron wave function is delocalized in the whole GaAs barrier when the Coulomb interaction is not taken into account.…”

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confidence: 99%

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Robert

Nestoklon

Silva

et al. 2014

Applied Physics Letters

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The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

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“…The investigations show that electrons can go from the valence to the conduction band when photons are absorbed in the GSi quantum-dot structures. These transitions are possible through the states in the intermediate band, with the states being formed by local energy levels of the quantum dots [25]. Analysis of the results obtained allows us to assume that a self-organized array of Ge quantum dots in Si with a high layer density forms an intermediate band within the forbidden band of the starting material.…”

Section: Ge/si-nanopoints In Optoelectronic Devicesmentioning

confidence: 99%

Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications

et al. 2011

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Recently much attention has been paid to detailed examination of fundamental properties of Ge/Si heterostructures with Ge nanoclusters. In this work, we consider possible applications of the structures with Ge quantum dots in silicon optoelectonic and microwave devices. The atomic and molecular processes of formation of quantum-dot arrays under molecular-beam epitaxy are studied experimentally. It is found that superstructure and surface morphlogy affect nanocluster ordering in the lateral direction. A possibility of developing a reproducible technology for production of devices on the basis of epitaxial Ge/Si nanoheterostructures with an ordered Ge-nanocluster ensemble is discussed.

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Interband absorption in charged Ge/Si type-II quantum dots

Cited by 53 publications

References 21 publications

Strain-induced spatially indirect exciton recombination in zinc-blende/wurtzite CdS heterostructures

Strain-induced spatially indirect exciton recombination in zinc-blende/wurtzite CdS heterostructures

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications

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