Interaction of VSe<sub>2</sub> with Ambient Gases: Stability and Chemical Reactivity

Edla, Raju; Kuo, Chia Nung; Torelli, Piero; Lue, Chin‐Shan; Boukhvalov, Danil W.; Politano, Antonio

doi:10.1002/pssr.201900332

Cited by 11 publications

(19 citation statements)

References 23 publications

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“…The Raman spectra presented in Figure b display only one predominant peak at 206.7 cm –1 in both as-grown and 3-month-old stock crystals in ambient conditions. The predominant peak at 206.7 cm –1 corresponds to the A 1g Raman active mode of 1T-VSe 2 . , The nearly identical peak positions and intensities of Raman spectra imply that as-grown VSe 2 bulk crystals are highly chemically stable up to 3 months, similar to the previous report . Moreover, we note the absence of other Raman peaks related to V 2 O 5 or V x O y (e.g., at 282 or 234 cm –1 ) in as-grown crystals. , …”

supporting

confidence: 87%

“…11,19 The nearly identical peak positions and intensities of Raman spectra imply that asgrown VSe 2 bulk crystals are highly chemically stable up to 3 months, similar to the previous report. 31 Moreover, we note the absence of other Raman peaks related to V 2 O 5 or V x O y (e.g., at 282 or 234 cm −1 ) in as-grown crystals. 30,32 To identify the crystal structure in detail, HR-TEM measurements were performed.…”

mentioning

confidence: 65%

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In-Depth Structural Characterization of 1T-VSe₂ Single Crystals Grown by Chemical Vapor Transport

Feroze

Park

et al. 2020

Crystal Growth & Design

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transition metal dichalcogenides (TMDCs) have been extensively studied. Among them, vanadium dichalcogenides, a unique metallic family of the TMDCs, have been considered as potential room temperature ferromagnetic materials at the monolayer scale. However, further progress has been hampered by the difficulties growing monolayer and the challenges making high-quality single crystalline VSe 2 , free from artificial factors. Here, we report high-quality octahedral 1T-VSe 2 single crystals grown by chemical vapor transport. Spectroscopic analyses identified that as-grown VSe 2 crystals were a single phase of VSe 2 and highly oriented along the (00l) plane. High-resolution scanning transmission electron microscopy verified that as-grown VSe 2 crystals not only had single crystalline nature, the octahedral 1T phase, and AAA stacking order in atomistic real space, but also supported valuable lattice information that differed from the predicted values of the previous calculation model. Mechanical exfoliation allowed our VSe 2 crystals to turn into largesized VSe 2 flakes with various thicknesses. With in-depth structural analyses, our findings provide insight into further research of the fundamental calculation model and the crystallographic tailoring for intrinsic room-temperature 2D ferromagnetic materials.

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supporting

confidence: 87%

mentioning

confidence: 65%

In-Depth Structural Characterization of 1T-VSe₂ Single Crystals Grown by Chemical Vapor Transport

Feroze

Park

et al. 2020

Crystal Growth & Design

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“…At last, tuning the physical properties of the material by applying pressure or by strain requires an understanding of its ground-state crystal structure. 1 T -VSe 2 is stable under ambient condition 34 . Researchers have achieved great advances in the chemical vapor transport growth of high-quality and large-size 1T-VSe 2 single crystals 35 .…”

Section: Introductionmentioning

confidence: 96%

Observation of pressure induced charge density wave order and eightfold structure in bulk VSe2

Guo

Hao

Dong

et al. 2021

Sci Rep

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Pressure-induced charge density wave (CDW) state can overcome the low-temperature limitation for practical application, thus seeking its traces in experiments is of great importance. Herein, we provide spectroscopic evidence for the emergence of room temperature CDW order in the narrow pressure range of 10–15 GPa in bulk VSe2. Moreover, we discovered an 8-coordination structure of VSe2 with C2/m symmetry in the pressure range of 35–65 GPa by combining the X-ray absorption spectroscopy, X-ray diffraction experiments, and the first-principles calculations. These findings are beneficial for furthering our understanding of the charge modulated structure and its behavior under high pressure.

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“…[4] The second generation of Xenes includes elements of the adjacent columns, most of which do not possess a stable layered allotrope and thus are synthesized by epitaxial growth. [7] Among TMD, the fundamental properties of MoS 2 are studied, [8] and it is also explored as a semiconductor in novel transistors based on vertical van der Waals heterostructures with graphene. [6] Thus it is a highly promising candidate for applications in nanoelectronics, energy, and the biomedical field.…”

mentioning

confidence: 99%

“…[7] Among TMD, the fundamental properties of MoS 2 are studied, [8] and it is also explored as a semiconductor in novel transistors based on vertical van der Waals heterostructures with graphene. For instance, VSe 2 is characterized by piezoelectricity and room-temperature ferromagnetism, coupled with a good ambient stability.…”

mentioning

confidence: 99%

Two‐Dimensional Semiconductors: Present and Future Challenges

Caporali

Grüneis

Heun

et al. 2020

Physica Rapid Research Ltrs

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There is a booming interest in two-dimensional (2D) materials, which are nowadays dominating the landscape of the nanotechnology field. Cutting-edge research is moving towards new mono-elemental 2D materials beyond graphene. [1] To reflect the strong interest of the scientific community towards this hot topic, a Symposium specifically addressing the applications of 2D semiconductor materials has been organized within the frames of the E-MRS Spring Meeting 2019 which took place in Nice (France). This Special Issue showcases the results and outlines the ongoing challenges presented by the participants of the Symposium.The quest for 2D elementary crystals behaving as topological insulators pushed the discovery of new members of the 2D world. As reviewed [2] by A. Molle and co-workers, this regards the family of M-Xenes, which are mono-elemental 2D materials originating from the boron (B, Ga), carbon (C, Si, Ge, Sn, Pb), pnictogen (P, As, Sb, Bi), and chalcogen (Se, Te) groups of the periodic table. Historically, one can distinguish the first generation of Xenes, strictly related to the carbon group and inspired by graphene, [3] whose most famous representative is silicene. [4] The second generation of Xenes includes elements of the adjacent columns, most of which do not possess a stable layered allotrope and thus are synthesized by epitaxial growth. A notable example is phosphorene, [1] synthesized mainly by mechanical or liquid exfoliation or by plasma treatment, [5] that has gained great interest for its peculiar chemical and physical properties. [6] Thus it is a highly promising candidate for applications in nanoelectronics, energy, and the biomedical field. Following this growing interest, current research is addressing heavier elements of the same group, [2] such as arsenene, antimonene, and bismuthene that have the advantage of larger spin-orbit coupling and higher ambient stability than phosphorene.Next to mono-elemental 2D materials, transition metal dichalcogenides (TMD) take on great importance for their complementary properties. For instance, VSe 2 is characterized by piezoelectricity and room-temperature ferromagnetism, coupled with a good ambient stability. [7] Among TMD, the fundamental properties of MoS 2 are studied, [8] and it is also explored as a semiconductor in novel transistors based on vertical van der Waals heterostructures with graphene. [9] WS 2 is a good candidate for optoelectronic devices, because it has the highest band gap (2.0 eV) in the visible region and a very strong photoluminescence emission. [10] Hence, there is the need to synthesize TMD nanosheets on a large scale, for example by moving towards a chemical wet procedure such as solvent-assisted exfoliation. [11] Heterostructures of interest are also built from graphene with aluminum nitride or oxide. In this way, the Fermi level can be finely tuned, achieving an improvement over graphene-based devices. [12] Alternatively, fabrication of one-dimensional graphene nanoribbons [13] by chemical vapor deposition on Ge(111) has been s...

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Interaction of VSe₂ with Ambient Gases: Stability and Chemical Reactivity

Cited by 11 publications

References 23 publications

In-Depth Structural Characterization of 1T-VSe₂ Single Crystals Grown by Chemical Vapor Transport

In-Depth Structural Characterization of 1T-VSe₂ Single Crystals Grown by Chemical Vapor Transport

Observation of pressure induced charge density wave order and eightfold structure in bulk VSe2

Two‐Dimensional Semiconductors: Present and Future Challenges

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Interaction of VSe2 with Ambient Gases: Stability and Chemical Reactivity

Cited by 11 publications

References 23 publications

In-Depth Structural Characterization of 1T-VSe2 Single Crystals Grown by Chemical Vapor Transport

In-Depth Structural Characterization of 1T-VSe2 Single Crystals Grown by Chemical Vapor Transport

Observation of pressure induced charge density wave order and eightfold structure in bulk VSe2

Two‐Dimensional Semiconductors: Present and Future Challenges

Contact Info

Product

Resources

About

Interaction of VSe₂ with Ambient Gases: Stability and Chemical Reactivity

In-Depth Structural Characterization of 1T-VSe₂ Single Crystals Grown by Chemical Vapor Transport

In-Depth Structural Characterization of 1T-VSe₂ Single Crystals Grown by Chemical Vapor Transport