Interaction of charge carriers with the localized magnetic moments of manganese atoms in p-GaInAsSb/p-InAs:Mn heterostructures

Lagunova, T. S.; Voronina, T. I.; Mikhaĭlova, M. P.; Moiseev, K. D.; Samokhin, E.; Yakovlev, Yu. P.

doi:10.1134/1.1601653

Cited by 4 publications

(7 citation statements)

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“…It was shown that energy gap changes depend on solid solution composition and the doping level of contacting materials [48,49]. The band offset values in the valence and conduction bands between InAs and GaInAsSb calculated from the vacuum level according to the approach proposed in [53] are: E v = −0.42 eV and E c = −0.66 eV, which is in good agreement with the experimental data obtained from a I-V and C-V characteristics study [30]. The calculated energy gap and spin-orbit splitting valence band values of the GaIn 0.17 As 0.22 Sb solid solution were E g = 0.602 eV and 0 = 0.642 eV at T = 300 K. Using the value E g (InAs) = 0.36 eV, the magnitude of the overlapping gap at the heteroboundary was roughly found to be ∼ 60 meV at 300 K.…”

Section: Energy Band Diagrams Of Type II Broken-gap Gainassb/inas(gas...supporting

confidence: 72%

“…In [29] theoretical calculations for synthesis of In-As-Ga-Sb solid solutions in the composition range close to InAs were performed. Further improvement in this system was achieved in 1995 when wide-gap Ga 1−x In x As y Sb 1−y epilayers on InAs with a high-quality smooth surface and heterostructures based on them were successfully obtained [30]. The dependence of the band-gap energy on the solid solution composition was established in [31][32][33].…”

Section: Quaternary Gainassb Solid Solutions Lattice-matched To Inasmentioning

confidence: 99%

“…Band energy diagrams of the type II broken-gap GaInAsSb/InAs and InAsSb/GaSb heterojunctions were considered in [30,50,51].…”

Section: Energy Band Diagrams Of Type II Broken-gap Gainassb/inas(gas...mentioning

confidence: 99%

See 2 more Smart Citations

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Mikhaĭlova¹,

Moiseev²,

Yakovlev³

2004

Semicond. Sci. Technol.

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This review deals with a study of optical and magnetotransport phenomena at a type II arsenide-antimonide heterojunction with a broken-gap alignment. A fundamental feature of this structure is partial overlapping of the InAs conduction band with the GaSb-rich solid solution valence band. In such a heterostructure, electrons and holes are spatially separated and localized in self-consistent quantum wells formed on both sides of the heterointerface. This leads to unusual tunnelling-assisted radiative recombination transitions and novel transport properties. Results of a pioneering study of interface-related luminescence in type II broken-gap GaInAsSb/InAs heterostructures, with a high quality abrupt heteroboundary, grown by the LPE method, are presented. The energy band diagram of the type II broken-gap GaInAsSb/InAs(GaSb) heterostructures and band overlapping control, depending on a doping level and epilayer composition of quaternary solid solution, are discussed. A 2D-electron channel with high Hall mobility at the p-GaInAsSb/p-InAs interface was found and examined. A great deal of attention is paid to quantum transport properties of the semimetal channel in a wide magnetic field range (up to 18 T) at low temperatures. A cyclotron resonance study was used to obtain data on the energy spectrum at the interface and to estimate effective masses for subbands in the semimetal channel. The intriguing behaviour of the 2D-electron system in the presence of localized holes in high magnetic fields and the first observation of integer quantum Hall effect plateaus on the type II single GaInAsSb/InAs heterointerface formed by LPE are demonstrated. A tunnelling-injection laser with high asymmetric band offset confinements based on the type II broken-gap heterojunction is considered. Applications of the interface-induced phenomena in luminescent and transport properties for the design of novel mid-IR optoelectronic devices and Hall sensors are briefly reviewed.

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Section: Energy Band Diagrams Of Type II Broken-gap Gainassb/inas(gas...supporting

confidence: 72%

Section: Quaternary Gainassb Solid Solutions Lattice-matched To Inasmentioning

confidence: 99%

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Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Mikhaĭlova¹,

Moiseev²,

Yakovlev³

2004

Semicond. Sci. Technol.

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“…For EL measurements, mesa-etched diode structures were produced by standard photolithography and were mounted on a TO-46 sample holder. The LED structure was grown on an n-InAs substrate which, in turn, forms a type II broken-gap n-P heterojunction with wide-gap P-GaInAsSb, but which exhibits Ohmic behaviour over a wide temperature range from liquid helium to room temperature [17]. We studied EL using the same applied external electric field direction as that used in the corresponding laser structure, i.e.…”

Section: Methodsmentioning

confidence: 99%

Interface-induced electroluminescence in the type II P-Ga_0.84In_0.16As_0.22Sb_0.78/ n-In_0.83Ga_0.17As_0.82Sb_0.18single heterojunction

Moiseev¹,

Krier²,

Mikhaĭlova³

et al. 2002

J. Phys. D: Appl. Phys.

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Intense electroluminescence in the range 77-300 K has been observed from interface transitions in type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18 single heterojunctions grown by liquid phase epitaxy from an In-rich melt. The quaternary epitaxial layers forming the P-n heterojunction were unintentionally doped and grown lattice-matched onto a (100)-oriented n-type InAs substrate. The electroluminescence and photoluminescence emission spectra from the heterostructure were investigated in detail and are discussed below. The luminescence spectra contained two interface-induced emission bands: hνA which was identified with radiative transitions between electron and hole quantum well sub-bands across the P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 heterointerface, while the emission band hνB originates from radiative transitions involving acceptor states in the narrow gap In0.83Ga0.17As0.82Sb0.18 near the type II heteroboundary.

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“…However, the Mn-doped heterostructures for hole concentration (po10 19 cm À3 ) might also be considered to study spin-related cooperative phenomena. Recently, strong negative magnetoresistance and anomalous Hall effect at temperatures T477 K were observed for the type II broken-gap single heterostructure p-GaInAsSb/p-InAs:Mn with 2D-semimetal channel at the heterointerface [9].…”

Section: Introductionmentioning

confidence: 99%

Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields

Parfeniev

Moiseev

Berezovets

et al. 2009

Journal of Magnetism and Magnetic Materials

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Interaction of charge carriers with the localized magnetic moments of manganese atoms in p-GaInAsSb/p-InAs:Mn heterostructures

Cited by 4 publications

References 1 publication

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Interface-induced electroluminescence in the type II P-Ga_0.84In_0.16As_0.22Sb_0.78/ n-In_0.83Ga_0.17As_0.82Sb_0.18single heterojunction

Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields

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Interaction of charge carriers with the localized magnetic moments of manganese atoms in p-GaInAsSb/p-InAs:Mn heterostructures

Cited by 4 publications

References 1 publication

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18single heterojunction

Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields

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Product

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Interface-induced electroluminescence in the type II P-Ga_0.84In_0.16As_0.22Sb_0.78/ n-In_0.83Ga_0.17As_0.82Sb_0.18single heterojunction