Intensity oscillations of reflection high-energy electron diffraction during silicon molecular beam epitaxial growth

Abstract

Articles you may be interested inReflection highenergy electron diffraction intensity oscillations during molecularbeam epitaxy on rotating substrates J.

Anisotropic kinetics on growing Ge(0 0 1) surfaces

“…When the electron beam was directed along the [1 0 0] azimuth, monolayer-period oscillations were observed (Fig. 1b), similarly to the case for Si(0 0 1) homoepitaxy [6,9]. The RHEED intensity along the [1 0 0] direction are equally influenced by steps parallel to the [1 1 0] and ½1 1 0 directions.…”

“…Oscillations in RD response with a period corresponding to one bilayer were observed, which is attributed to variations in relative coverages of alternating (2 Â 1) and (1 Â 2) domains [3,4]. On the other hand, oscillatory behaviors in RHEED intensities are rather complicated and monolayer-and bilayer-period oscillations are observed [3,4,[6][7][8][9]. Although RHEED oscillations could be explained by the changing surface morphology, the detailed explanation for the two types of oscillation modes still remains an open question.…”

A Two-Dimensional Bloch-Wave Method for Dynamical RHEED Calculations

“…After the discovery of RHEED intensity oscillations by Harris et al (1981), it is well established that the specular-beam intensity for the layer-by-layer growth oscillates with a period corresponding to the deposition of monolayer (Neave et al, 1983;Joyce et al, 1986) or bilayer (Sakamoto et al, 1989;Ohtani et al, 1992;Mitsuishi et al, 1995). Of considerable importance to the development of molecular-beam epitaxy (MBE) has been application of RHEED as in situ surface-structure analysis.…”

Mechanism of ellipsometry monolayer oscillations during metalorganic vapor-phase epitaxy

“…The deviation between in situ and ex situ data was less than 1%. We thus concluded that ellipsometry in MOVPE growth has a potential equivalent to RHEED for MBE growth 9,10 in characterizing the surface before growth and calibrating growth on a monolayer scale.…”