Abstract:The minority-carrier lifetime has been measured by time-resolved photoluminescence in a variety of III-V epitaxial material including GaAs and AlxGa1−xAs. In cases where Shockley–Read–Hall recombination is dominant, the measured lifetimes are dependent upon the intensity of the excitation source. These lifetime effects can be described by a Shockley–Read–Hall model that includes the injection dependence of the recombination. As the lifetimes increase with the injection level, we describe the effects as the sat… Show more
“…As the injection level increases, these traps begin to saturate, 10 thus increasing the fraction of excess carriers recombining radiatively. Fig.…”
Section: Structural Details and Experimental Proceduresmentioning
confidence: 99%
“…Assuming the Auger recombination is negligible, the nonradiative SRH lifetime may vary as a function of injection due to effects such as trap saturation. 10 Considering the radiative lifetime (s rad ), it can be approximated as…”
Section: Structural Details and Experimental Proceduresmentioning
confidence: 99%
“…To compute the excess carrier concentration as a function of laser light intensity, the set of Equations (5)- (7) must be solved numerically in combination with Equations (9b) and (10). The effective radiative efficiency enters the set of equations via Equation (11) and is based directly on the measured data (see Fig.…”
Section: Theoretical Background a Steady-state Conditionsmentioning
A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 1017 cm−3) for an injected excess carrier concentration below 4 × 1012 cm−3. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.
“…As the injection level increases, these traps begin to saturate, 10 thus increasing the fraction of excess carriers recombining radiatively. Fig.…”
Section: Structural Details and Experimental Proceduresmentioning
confidence: 99%
“…Assuming the Auger recombination is negligible, the nonradiative SRH lifetime may vary as a function of injection due to effects such as trap saturation. 10 Considering the radiative lifetime (s rad ), it can be approximated as…”
Section: Structural Details and Experimental Proceduresmentioning
confidence: 99%
“…To compute the excess carrier concentration as a function of laser light intensity, the set of Equations (5)- (7) must be solved numerically in combination with Equations (9b) and (10). The effective radiative efficiency enters the set of equations via Equation (11) and is based directly on the measured data (see Fig.…”
Section: Theoretical Background a Steady-state Conditionsmentioning
A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 1017 cm−3) for an injected excess carrier concentration below 4 × 1012 cm−3. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.
“…Figure 1.8 shows this for the 10. t.tm thick DH doped to 3.8 x 1018 cm-3. We attribute this to the saturation of SRH deep levels under high intensity, but not high injection conditions [22]. Under these conditions and if Zrr_ _, the deep levels can become emptied and the SRH recombination equation reduces to…”
“…The time-resolved photoluminescence technique has been successfully used in this mode [5] but does not work for indirect bandgap materials such as silicon. In this paper, we will show that the ultra-high frequency photoconductive decay (UHFPCD) technique is applicable for ILS measurements in indirect bandgap materials such as silicon.…”
ABSTRACT. Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to an ultrapure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model.
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