Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers

Abstract

The minority-carrier lifetime has been measured by time-resolved photoluminescence in a variety of III-V epitaxial material including GaAs and AlxGa1−xAs. In cases where Shockley–Read–Hall recombination is dominant, the measured lifetimes are dependent upon the intensity of the excitation source. These lifetime effects can be described by a Shockley–Read–Hall model that includes the injection dependence of the recombination. As the lifetimes increase with the injection level, we describe the effects as the saturation of recombination centers.

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

“…As the injection level increases, these traps begin to saturate, 10 thus increasing the fraction of excess carriers recombining radiatively. Fig.…”

“…Assuming the Auger recombination is negligible, the nonradiative SRH lifetime may vary as a function of injection due to effects such as trap saturation. 10 Considering the radiative lifetime (s rad ), it can be approximated as…”

“…To compute the excess carrier concentration as a function of laser light intensity, the set of Equations (5)- (7) must be solved numerically in combination with Equations (9b) and (10). The effective radiative efficiency enters the set of equations via Equation (11) and is based directly on the measured data (see Fig.…”

New III-V Cell Design Approaches for Very High Efficiency, Annual Subcontract Report, 1 August 1991 - 31 July 1992

“…Figure 1.8 shows this for the 10. t.tm thick DH doped to 3.8 x 1018 cm-3. We attribute this to the saturation of SRH deep levels under high intensity, but not high injection conditions [22]. Under these conditions and if Zrr_ _, the deep levels can become emptied and the SRH recombination equation reduces to…”

Large-signal injection-level spectroscopy of impurities in silicon

“…The time-resolved photoluminescence technique has been successfully used in this mode [5] but does not work for indirect bandgap materials such as silicon. In this paper, we will show that the ultra-high frequency photoconductive decay (UHFPCD) technique is applicable for ILS measurements in indirect bandgap materials such as silicon.…”