Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−<i>x</i>Ge<i>x</i> alloys

Noël, J.‐P.; Rowell, N. L.; Houghton, D. C.; Perović, D. D.

doi:10.1063/1.103558

Cited by 162 publications

(28 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…27 Considering nonradiative carrier recombination associated with structural defects ͑e.g., dislocations͒, we note that ͑i͒ previous TEM studies do not reveal any significant amount of dislocations and ͑ii͒ our PL measurements do not show any specific, dislocation related PL lines ͑i.e., D1, D2, etc.͒ that are normally observed in highly dislocated Si/SiGe samples. 28,29 In conclusion, we have shown that higher than 50% Ge concentration in 3D Si/Si 1Ϫx Ge x nanostructures grown under conditions close to S-K growth mode induces Ge segregation in the form of Ge-core/SiGe shell nanoclusters. These clusters exhibit an efficient, extending almost to room temperature, PL.…”

mentioning

confidence: 66%

Photoluminescence and Raman scattering in three-dimensional Si/Si1−xGex nanostructures

Kamenev

Tsybeskov

Baribeau

et al. 2004

Applied Physics Letters

View full text Add to dashboard Cite

We report detailed Raman and photoluminescence (PL) measurements in Si/Si1−xGex nanostructures grown by molecular-beam epitaxy under conditions of near Stranski–Krastanov (S-K) growth mode. In a series of samples with x controllably increased from 0.098 to 0.53, we observe that an increase in Raman signal related to Ge–Ge vibrations clearly correlates with (i) a redshift in the PL peak position, (ii) an increase in the activation energy of PL thermal quenching, and (iii) an increase in the PL quantum efficiency. The results indicate that in S-K Si/Si1−xGex nanostructures with x>0.5 Ge atoms form nanometer-sized clusters with a nearly pure Ge core and a SiGe shell.

show abstract

mentioning

confidence: 66%

Photoluminescence and Raman scattering in three-dimensional Si/Si1−xGex nanostructures

Kamenev

Tsybeskov

Baribeau

et al. 2004

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…For example, room-temperature visible photoluminescence (PL) has been observed from porous Si [1] and strong infrared PL from various island or quantum dot systems [2][3][4][5][6][7][8][9]. A particular focus has been the study of self-organized structures containing nanometer sized Si and Ge crystals [10] which being compatible with present Si technology have important capabilities for device engineering.…”

Section: Introductionmentioning

confidence: 98%

Photoluminescence of Ge nanocrystals self-assembled on SiO2

Rowell

Lockwood

Karmous

et al. 2008

Superlattices and Microstructures

View full text Add to dashboard Cite

“…For example, room-temperature visible photoluminescence (PL) has been observed from porous Si (1) and strong infrared PL from various island or quantum dot systems (2)(3)(4)(5)(6)(7)(8)(9). A particular focus has been the study of self-organized structures containing nanometer sized Si and Ge crystals (10), which being compatible with present Si technology have important capabilities for device engineering.…”

Section: Introductionmentioning

confidence: 98%

(Invited) Photoluminescence Efficiency of Germanium Dots Self-Assembled on Oxides

et al. 2013

View full text Add to dashboard Cite

Self-assembled Ge quantum dots were formed by in-situ thermal annealing of a thin amorphous Ge layer deposited by molecular beam epitaxy either on a thin porous TiO 2 layer grown on SiO 2 on Si(001) or directly on the SiO 2 layer itself. For samples with dot diameters ranging from 10 to 35 nm, the dot photoluminescence (PL) appeared primarily as a wide near-infrared band peaked near 800 meV. The peak energy of the PL band reflects the average dot size and its shape depends on the dot size distribution. Using tight binding and effective mass theoretical models, we have analyzed the PL spectrum in terms of the dot size distribution. The observed size distribution determined from transmission electron and atomic force microscopy allowed the determination of the nonlinear increase in the PL efficiency with decreasing dot diameter. Although the absolute intensities of the PL from the samples vary, the calculated efficiency curves are all well fitted by straight lines on a log-log plot, with essentially the same slope for all samples, thereby demonstrating that under the weak confinement regime investigated here there is a universal power-law increase in PL efficiency with decreasing dot size. Knowing this generic PL efficiency, we show that it is possible to evaluate the size distribution of Ge dots from their PL energy dependence.

show abstract

Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloys

Cited by 162 publications

References 14 publications

Photoluminescence and Raman scattering in three-dimensional Si/Si1−xGex nanostructures

Photoluminescence and Raman scattering in three-dimensional Si/Si1−xGex nanostructures

Photoluminescence of Ge nanocrystals self-assembled on SiO2

(Invited) Photoluminescence Efficiency of Germanium Dots Self-Assembled on Oxides

Contact Info

Product

Resources

About