Abstract:We report the current status of our development of spin-transfer torque magnetic RAMs (STT-MRAMs) and their integration with the back-end-of-line (BEOL) process to replace conventional embedded SRAM cache memories. Our MRAM technology features a top-pinned, perpendicular magnetic tunnel junction (MTJ) and a highly reliable MTJ for a cache memory. We could obtain a higher density cache memory than that with conventional SRAMs with our STT-MRAMs, and leakage free characteristics, as well as unlimited write and r… Show more
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