Integration of self-assembled carbon nanotube transistors: statistics and gate engineering at the wafer scale

Abstract

We present a full process based on chemical vapour deposition that allows fabrication and integration at the wafer scale of carbon-nanotube-based field effect transistors. We make a statistical analysis of the integration yield that allows assessment of the parameter fluctuations of the titanium-nanotube contact obtained by self-assembly. This procedure is applied to raw devices without post-process. Statistics at the wafer scale reveal the respective role of semiconducting and metallic connected nanotubes and show that connection yields up to 86% can be reached. For large scale device integration, our process has to implement both wafer-scale self-assembly of the nanotubes and high transistor performances. In order to address this last issue, a gate engineering process has been investigated. We present the improvements obtained using low and high κ dielectrics for the gate oxide.

Position and density control in hydrothermal growth of ZnO nanorod arrays through pre-formed micro/nanodots

“…One-dimensional (1D) nanostructures show great potential for next-generation devices [1][2][3][4]. Since ZnO has a wide bandgap (3.37 eV) and a large excitation bonding energy (60 meV), 1D ZnO nanostructures, such as nanorods or nanowires, have attracted growing interest due to their potential applications as building blocks for nanoscale electronic and optoelectronic devices.…”

Effect of Ti and Au buffer layers on controlling the density and wettability of well-aligned ZnO nanorod arrays grown on different substrates

“…ZnO NRAs show great potential applications for next generation nanodevices. [1][2][3][4] Among CdO, WO 3 , TiO 2 , SnO 2, MgO, In 2 O 3 and ZnO metal oxides, 5 ZnO is widely used. ZnO nanostructures are manipulated as key materials in solar cells, 6,7 electromechanical devices, 8 ultraviolet (UV) lasers, 9 light-emitting and Schottky diodes, 10 eld emission devices, 11 high performance nanosensors, 12 piezoelectric nanogenerators, 13 biosensors, 14 nanopiezotronics, 15 surface acoustic wave devices, 16 at panel displays, 17 quantum dot devices, 18 bio safety and bio-compatibility 19 due to their intrinsic properties of non-toxicity, and good electrical and optical features.…”

Nanoscale welding by AFM tip induced electric field

“…However, the biggest challenges are to assemble SWCNTs between the two electrodes, and to realize the reliable contact between SWCNTs and the micro electrodes. In the past few years, many techniques have been developed to fabricate SWCNT-based devices on the nanoscale [7][8][9][10]. Recently, AFM has been used in the field of immobilizing or soldering of SWCNTs to the surface of silicon or metal electrodes [11,12].…”