Integration of photonic circuits with electronics on bulk-Si platform

Lee, B. S.; Cho, K. S.; Shin, Yong-hwack; Kim, J. H.; Bok, J. K.; Kim, S. G.; Shin, Dongjae; Lee, S. Y.; Choi, Seong Hee; Ji, Ho-Chul; Cho, K. Y.; Byun, Hyun-Geun; Joe, In-Sung; Kuh, Bong Jin; Sunil, P.; Shin, Jungyeop; Lim, Ji Yeon; Kim, B. S.; Choi, Hanmei; Ha, K. H.; Jeong, Gitae; Jin, Gyo Young; Jung, Eui S.

doi:10.1109/group4.2013.6644460

Cited by 2 publications

(1 citation statement)

References 4 publications

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“…The EIC included 2 4:1 serializers and 2 1:4 deserializers for (de)multiplexing the 8 electrical signals to 2 optical signals, 2 modulator drivers, 2 trans-impedance amplifiers(TIAs) and limiting amplifiers(LAs) for 2 PDs, and clock tree circuit. Details of the EPIC can be found in the previous reports [19], [21], [24]. In short, the PIC and EIC were physically integrated side-by-side, but not chemically because of design rule conflicts at the moment.…”

Section: B Process Flow and Chip Structurementioning

confidence: 99%

Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Shin

Byun

Shim

et al. 2022

J. Lightwave Technol.

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The CMOS industry has been expecting silicon photonics to provide photonic and electro-photonic integrated circuits based on the CMOS processes and infrastructures for scalability of incumbent technology evolutions and creation of novel technologies. However, the compatibility with the legacy CMOS has been compromised with the development convenience of early silicon photonics in that the specialty silicon-on-insulator substrates have been widely used as integration platforms. Since this specialty substrate may hinder the photonics integration with legacy volume products later, a legacy-friendly integration platform with a generic bulk-silicon substrate has been developed for better compatibility. This paper overviews the bulk-silicon photonics platform born for DRAM integration, upgraded with III/V-on-bulk-Si lasers, and transplanted to LiDAR applications requiring the virtuous cycle of cost and volume. The photonics integration with DRAM was to resolve the speed-capacity tradeoff in the DRAM interconnects, and technical feasibility as well as lessons learned from the integration attempt are reviewed. The bulk-silicon device performance approaches that of silicon-oninsulator devices with the thermal advantage of ~40-% lower thermal impedance and the optical disadvantage of ~0.4-dB/mm higher waveguide loss. In the LiDAR applications, detection performance up to ~20 m at 20 fps by a single-chip scanner integrating tunable laser, semiconductor optical amplifiers, and optical phased array are presented with future outlooks.

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Section: B Process Flow and Chip Structurementioning

confidence: 99%

Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Shin

Byun

Shim

et al. 2022

J. Lightwave Technol.

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A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer

Zhang

Yako

et al. 2017

Science and Technology of Advanced Materials

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A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most challenging targets in Si photonics. The present study specifies an optical materials group for DWDM by a systematic survey of their TO coefficients and refractive indices. The group is classified as mid-index contrast optics (MiDex) materials, and non-stoichiometric silicon nitride (SiNx) is chosen to demonstrate its significant thermal stability. The TO coefficient of non-stoichiometric SiNx is precisely measured in the temperature range 24–76 °C using the SiNx rings prepared by two methods: chemical vapor deposition (CVD) and physical vapor deposition (PVD). The CVD-SiNx ring reveals nearly the same TO coefficient reported for stoichiometric CVD-Si3N4, while the value for the PVD-SiNx ring is slightly higher. Both SiNx rings lock their resonance frequencies within 100 GHz in this temperature range. Since CVD-SiNx needs a high temperature annealing to reduce N–H bond absorption, it is concluded that PVD-SiNx is suited as a MiDex material introduced in the CMOS back-end-of-line. Further stabilization is required, considering the crosstalk between two channels; a ‘silicone’ polymer is employed to compensate for the temperature fluctuation using its negative TO coefficient, called athermalization. This demonstrates that the resonance of these SiNx rings is locked within 50 GHz at the same temperature range in the wavelength range 1460–1620 nm (the so-called S, C, and L bands in optical fiber communication networks). A further survey on the MiDex materials strongly suggests that Al2O3, Ga2O3 Ta2O5, HfO2 and their alloys should provide even more stable platforms for DWDM implementation in MiDex photonics. It is discussed that the MiDex photonics will find various applications such as medical and environmental sensing and in-vehicle data-communication.

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Integration of photonic circuits with electronics on bulk-Si platform

Cited by 2 publications

References 4 publications

Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer

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