Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties

Abstract

We report the fabrication of 0.71Pb(MgNb)O-0.29PbTiO (PMN-0.29PT)-based ferroelectric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin dioxide (SnO) semiconductor thin films on PMN-0.29PT single crystals. Using such FeFETs we realized in situ, reversible, and nonvolatile manipulation of the electron carrier density and achieved a large nonvolatile modulation of the resistance (∼330%) of the SnO:Co films through the polarization switching of PMN-0.29PT at 300 K. Particularly, combining the ferroelectric gating with piezoresponse force microscopy, X-ray diffraction, Hall effect, and magnetoresistance (MR), we rigorously disclose that both sign and magnitude of the MR are intrinsically determined by the electron carrier density, which could modify the s-d exchange interaction of the SnO:Co films. Furthermore, we realized multilevel resistance states of the SnO:Co films by combining the ferroelectric gating with ultraviolet light illumination, demonstrating that the FeFETs have potential applications in multistate resistive memories and electro-optical devices.

Electro−Photo Double Control of Resistive Switching in Electron‐Doped La0.9Hf0.1MnO3 Films

“…However, as the temperature decreased to T = 220 and 200 K in the dark, the resistance versus voltage curves exhibited hysteresis‐like loops with the opposite signs for opposite directions of voltages, as reported in hole‐dope manganite/PMN−PT, electron‐doped TiO 2−δ /PMN−PT, and SnO 2 :Co/PMN−PT ferroelectric‐based field‐effect transistors (FETs). [ 20,21 ] Here, the LHMO/PMN−PT heterostructures can also be considered as FETs, where the LHMO film and the PMN−PT layer act as the conductive channel and the insulating gate, respectively. The electric‐field‐induced polarization of the ferroelectric substrate generates a thin charge accumulation or depletion at the interface of the heterostructure, which can be screened by an equal number of charge carriers of the opposite sign in the channel (i.e., the ferroelectric field effect).…”

Room‐Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr‐Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid

“…Here, , where and are the resistivity of ICO011 films for theand states, respectively. The Δρ/ρ value is ≈150–17 000 times larger than those reported previously for thin film/PMN‐ x PT heterostructures . Considering practical applications, the reproducibility and stability of the resistivity states of the heterostructures are crucial.…”

Effects of Illumination and Ferroelectric Field on Nanoscale Al:ZnO Films: Implications for Nonvolatile Multistage Storage and Photosensor Devices

“…15−19 It should be noted that the remanent polarization of PMN-PT single crystal is about 30−40 μC/cm 2 , with the corresponding surface charge density around (1.9−2.5) × 10 14 charge/cm 2 . 12,13 In order to obtain a large modulation of the carrier-densitymediated physical properties by the ferroelectric field effect, the magnitude of the areal carrier density of the film needs to be equal to or smaller than the PMN-PT surface charge density. Hence, the carrier density of the selected films should be as low as possible.…”

“…The carrier density is important to the semiconductor films, which can be adjusted by changing the preparation conditions, such as deposition atmosphere, temperature, and transition metal doping . One of the most practical methods to achieve the modulation of carrier density is to fabricate the semiconductor films on ferroelectric substrates. − Reversible and nonvolatile modulated carrier density of the films can be achieved by the ferroelectric field effect under the electric field. The (1– x )­PbMg 1/3 Nb 2/3 O 3 – x PbTiO 3 single crystal at the phase boundary (0.29 ≤ x ≤ 0.33) is widely studied, due to the large ferroelectric polarization ( P r ≈ 30–40 μC/cm 2 ) and excellent piezoelectric coefficient ( d 33 ≈ 2000 pC/N). − It should be noted that the remanent polarization of PMN-PT single crystal is about 30–40 μC/cm 2 , with the corresponding surface charge density around (1.9–2.5) × 10 14 charge/cm 2 . , In order to obtain a large modulation of the carrier-density-mediated physical properties by the ferroelectric field effect, the magnitude of the areal carrier density of the film needs to be equal to or smaller than the PMN-PT surface charge density.…”