Integration of multimode interference device with electroabsorption modulators as simple switches

Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators

“…Although the quality of the low-temperature (LT) SiO 2 layer is not as good as that deposited at higher temperature (approximately 300°C), the quality was found to be acceptable and did not affect the refractive indices of SiO 2 [9]. It is also worth highlighting that although LT SiO 2 is more porous and less adhesive than that deposited at higher temperature, it is sufficiently stable for our annealing needs [10]. The SiO 2 deposition was followed by annealing at conditions which were based on previously reported works [11,12], i.e., 600°C and 750°C.…”

Enhancement AlGaAs/InGaAs quantum well intermixing by the technology of cycles annealing

“…The latter enables various benefits such as excellent alignment, negligible reflection losses, and intrinsic mode matching between integrated devices, hence providing a very enticing vision for the future of high-density photonic integrated circuits (PICs). QWI can be implemented through a variety of technique, such as impurity induced disordering (IID) [2] ,laser induced disordering (LID) [3] , plasma induced disordering (PID) [4] ,impurity -free vacancy disordering (IFVD) [5][6][7][8].IFVD is the most attractive because the procedure is relatively simple,meanwhile, the residual defects and impurities can be less than those of other intermixing techniques, so the technology has a broad prospect of application in optical communications [9]。 IFVD is a technique to induce group-III outdiffusion into the cap dielectric layer, hence promotinggroup-III interdiffusion between the QW and surrounding barriers during high temperature annealing. There are many factors that can influence the effect of intermixing, such as film thickness and film materials.…”