Enhancement AlGaAs/InGaAs quantum well intermixing by the technology of cycles annealing

Abstract

The effect of intermixing in change InGaAs/AlGaAs quantum well structure using impurity-free vacancy disordering (IFVD) technique was investigated. Through the experiment we found that the magnitude of the blue shift changes with the annealing time and the thickness of the dielectric layer. The thicker dielectric layer under the same annealing temperature to withstand the longer, the larger blue shift we got. Cycle-annealing in high temperature for short time to ensure that quantum well were intermixing evidently under the condition of no obvious damage. 46 nm blue shift have been achieved by applying a cycle-annealing at 850℃ in 6 minutes for 5 cyclesand the PL peak keep more than 80% of the as-grown sample. Finally, we found that the dielectric film of Si3N4 can suppress intermixing and protect the quality of the samples as the protective film.

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer

“…Setting the diffusion length to L d and after the completion of quantum well mixing, the expression of Al component concentration in quantum well and quantum barrier is as follows [19] :…”