Integration of high-Q GaAs varactor diodes and 0.25 mu m GaAs MESFET's for multifunction millimeter-wave monolithic circuit applications

McDermott, M.G.; Sweeney, C.; Benedek, M.; Borelli, J.; Dawe, G.; Raffaelli, L.

doi:10.1109/22.58641

Cited by 7 publications

(2 citation statements)

References 2 publications

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“…Thus, the important parameters in such devices are the capacitance–voltage characteristics as well as the breakdown voltage. Different varactor structures with certain limitations in increasing capacitance ratio and breakdown voltage have been reported to improve their capability as a tunable device such as abrupt junction, MOS, MIS, planar structure, and quantum barrier . Uniformly doped and linearly graded junctions are not the only possible doping profiles in varactor diodes.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of GaAs varactor diode with hyperabrupt doping profile

Heo

Hong

Choi

et al. 2014

Phys. Status Solidi A

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We investigate the performance of hyperabrupt doping profile based GaAs varactor diodes. Epitaxially grown GaAs nn+ devices, having an intentionally graded n‐active layer doping concentration, exhibit significant improvements in the breakdown voltage and capacitance relative to flat n‐active layer devices. It is found that the varactor diodes with a hyperabrupt doping profile are effective in shifting the breakdown voltage. Moreover, the capacitance in the hyperabrupt graded junction is comparatively more dependent on the reverse‐bias voltage than that in the uniformly doped junction. Experimental results indicate a maximum reverse breakdown voltage of 40 V at a leakage current of 165 µA. Furthermore, the maximum and minimum capacitances are 3.88 and 0.72 pF, respectively, for an anode diameter of 70 µm, resulting in a Cmax/Cmin ratio of 5.39. Packaged GaAs varactor diode for VCO applications.

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Section: Introductionmentioning

confidence: 99%

Characteristics of GaAs varactor diode with hyperabrupt doping profile

Heo

Hong

Choi

et al. 2014

Phys. Status Solidi A

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“…In order to increase output power and to buffer the VCO chip, a driver amplifier (figure 3) and a power amplifier (figure 4) were developed. The amplifier chips are based on Alpha's standard 0.25 x 400 micron power MESFET process.…”

Section: Figure 2 38 Ghz Mmic Vcomentioning

confidence: 99%

A low cost 77 GHz monolithic transmitter for automotive collision avoidance systems

Raffaelli

Stewart

Quimby

et al.

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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The design, integration and test results of a 77 GHz GaAs monolithic transmitter specifically optimized for low cost, large volume automotive collision avoidance systems is presented.Greater than +15 dBm of output power has been achieved at the output waveguide intexface across a 1 GHz bandwidth using monolithic chips exclusively. This module, due to its small size, light weight and low production cost, is a significant advance in MMW technology from traditional waveguide hybrid approaches and it now makes collision avoidance radars affordable.

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A novel fabrication technology for integrating FETs and high-performance diodes, and its application to MMIC VCO

Jung

Kwon²

International Electron Devices Meeting. Technical Digest

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We demonstrated a new fabrication technology for integrating FET's and high performance diodes, employing a new FET called FECFET. A diode fabricated with FECFET shows a cutoff frequency of >1500 GHz. It is the best result among the diodes integrated with FET's. By this technology, a fabricated FECFET-based MMIC VCO shows a SSB phase noise of -76dBcHz and -1 12dBcHz at lOOKHz and lMHz offset frequency, respectively. These results show that this technology can be extended to the fabrication of other MMIC's with diode and FET combinations.

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Integration of high-Q GaAs varactor diodes and 0.25 mu m GaAs MESFET's for multifunction millimeter-wave monolithic circuit applications

Cited by 7 publications

References 2 publications

Characteristics of GaAs varactor diode with hyperabrupt doping profile

Characteristics of GaAs varactor diode with hyperabrupt doping profile

A low cost 77 GHz monolithic transmitter for automotive collision avoidance systems

A novel fabrication technology for integrating FETs and high-performance diodes, and its application to MMIC VCO

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