Integration of chemical vapor deposition titanium nitride for 0.25 μm contacts and vias

Westerheim, A. C.; Bulger, J. M.; Whelan, Caroline; Sriram, T. S.; Elliott, Linda; Maziarz, J. J.

doi:10.1116/1.590264

Cited by 16 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Quite unusual, such a nitride film has a high electrical conductivity. In semiconductor industry, it has been used as an inorganic antireflective coating for lithography [90], hardmask for low-κ patterning [91,92], and diffusion barrier for tungsten contact and Cu interconnection [93,94].…”

Section: Ald Of P-type Metal Gatementioning

confidence: 99%

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Zhao

Xiang

2019

Applied Sciences

View full text Add to dashboard Cite

The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of channel in last 20 years. To solve the first issue, the high-κ dielectric and metal gate technology had been induced to replace the conventional gate stack of silicon dioxide layer and poly-silicon. To suppress the short channel effects, device architecture had changed from planar bulk Si device to fully depleted silicon on insulator (FDSOI) and FinFETs, and will transit to gate all-around FETs (GAA-FETs). Different from the planar devices, the FinFETs and GAA-FETs have a 3D channel. The conventional high-κ/metal gate process using sputtering faces conformality difficulty, and all atomic layer deposition (ALD) of gate stack become necessary. This review covers both scientific and technological parts related to the ALD of metal gates including the concept of effect work function, the material selection, the precursors for the deposition, the threshold voltage (Vt) tuning of the metal gate in contact with HfO2/SiO2/Si. The ALD of n-type metal gate will be detailed systematically, based mainly on the authors’ works in last five years, and the all ALD gate stacks will be proposed for the future generations based on the learning.

show abstract

Section: Ald Of P-type Metal Gatementioning

confidence: 99%

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Zhao

Xiang

2019

Applied Sciences

View full text Add to dashboard Cite

show abstract

“…With the similar reason, the orientation of the tungsten film also tended to form the (110) phase as the treated time increased. Tungsten films often exhibit bcc crystal structure and their diffraction patterns shall contain (110), (200), and (211); but the (110) phase for tungsten was corresponding to the lowest interface energy on these TiN films, which is, in turn the minimum-energy structure [10,15,16]. This was the reason that the treated energy, i.e., the product of the treated power and time, could change the TiN film orientation under the over-treatment condition, and then affect the tungsten orientation.…”

Section: The Change Of Tungsten Phase Due To the Underlying Tin Layermentioning

confidence: 99%

Effects of plasma treatment in the tungsten process for chemical vapor deposition titanium nitride barrier film beyond nanometer technology

et al. 2006

View full text Add to dashboard Cite

“…It also separates tungsten from a titanium glue layer and silicon dioxide, the interaction of which results in the potential risk of voids formation and other reliability problems. A metal-organic chemical vapour deposition (MOCVD) technique with a precursor of tetrakisdimethyl-amido-titanium (TDMAT) is commonly employed to process TiN films in 0.25 µm technology and beyond, for its better step coverage compared with physical vapour deposition (PVD) [3] and lower process temperature compared with TiCl 4 /NH 3 CVD [4]. To remove the large amount of carbon and oxygen atoms in the as-deposited film, a N 2 /H 2 plasma treatment (PT) is needed.…”

Section: Introductionmentioning

confidence: 99%

Comparison of metal-organic chemical vapour deposition TiN thin films with different process cycles

Yi¹,

Zhang²,

Wu³

et al. 2006

Semicond. Sci. Technol.

View full text Add to dashboard Cite

As a diffusion barrier layer, metal-organic chemical vapour deposition titanium nitride (TiN) thin films are widely used in IC manufacturing. It is well known that a N 2 /H 2 plasma treatment should be applied to remove highly concentrated impurities such as carbon and oxygen in the as-deposited TiN films. For an efficient plasma treatment, the fabrication process of relatively thick films has to be repeated. In this paper, the electrical performance of different TiN films with single and multiple process cycles is systematically compared to both blanket and patterned wafers. It was found that a multi-cycle process introduces local interfaces, which correspondingly degrades the electrical conductivity of a TiN film. Throughputs of different processes were also compared. The process with a single cycle shows an 18% higher throughput than the process with dual cycles. It is also reported for the first time that the plasma treatment efficiency is position sensitive in real structures.

show abstract

Integration of chemical vapor deposition titanium nitride for 0.25 μm contacts and vias

Cited by 16 publications

References 5 publications

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Effects of plasma treatment in the tungsten process for chemical vapor deposition titanium nitride barrier film beyond nanometer technology

Comparison of metal-organic chemical vapour deposition TiN thin films with different process cycles

Contact Info

Product

Resources

About