Abstract:As a diffusion barrier layer, metal-organic chemical vapour deposition titanium nitride (TiN) thin films are widely used in IC manufacturing. It is well known that a N 2 /H 2 plasma treatment should be applied to remove highly concentrated impurities such as carbon and oxygen in the as-deposited TiN films. For an efficient plasma treatment, the fabrication process of relatively thick films has to be repeated. In this paper, the electrical performance of different TiN films with single and multiple process cycl… Show more
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