Integration of Both Invariable and Tunable Microwave Magnetisms in a Single Flexible La0.67Sr0.33MnO3 Thin Film

Wang, He; Shen, Lvkang; Duan, Tingzhi; Ma, Chunrui; Cao, Cuimei; Jiang, Changjun; Lü, Xiaoli; Sun, Hongyu; Liu, Ming

doi:10.1021/acsami.9b04877

Cited by 28 publications

(13 citation statements)

References 28 publications

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“…In recent years, epitaxial or nanostructured oxide thin films have been successfully transferred from single-crystal substrates to flexible substrates by eliminating the sacrificial layers of MgO and Sr 3 Al 2 O 6 thin films using an (NH 4 ) 2 SO 4 solution and water. − Yu et al transferred WO 3 nanohelix arrays and tin-doped In 2 O 3 nanobranches on large-area flexible substrates by removing the water-soluble sodium chloride (NaCl) thin films deposited via thermal evaporation …”

Section: Introductionmentioning

confidence: 99%

Strain-Induced Photocurrent Enhancement in Photodetectors Based on Nanometer-Thick ZnO Films on Flexible Polydimethylsiloxane Substrates

Mun

Lee

et al. 2020

ACS Appl. Nano Mater.

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Strain-induced modulation of electronic, magnetic, and photonic properties provides additional functionalities to oxide thin filmbased electronics as compared to those of conventional rigid electronics. Herein, we introduce a simple transfer process for highly crystalline nanometerthick films onto flexible polydimethylsiloxane (PDMS) using water-soluble sacrificial NaCl crystals. The c axis of the high-temperature sputtered ZnO thin films grew along a parallel direction to the substrate surface, thereby revealing the (100) reflection on both Si and NaCl substrates, which is desirable for designing photoconductors with a planar geometry. However, films grown at room temperature showed a preferred growth orientation along the vertical direction to the substrate surface. The photodetectors synthesized using ZnO thin films grown directly on PDMS at room temperature exhibited a low current, whereas the photodetectors fabricated using ZnO thin films grown at a high temperature exhibited dramatically increased currents in the dark and under ultraviolet (UV) light. The photodetector performance was further enhanced under external strain due to the piezophototronic effect induced by bending or stretching the photodetectors under UV light. These properties were confirmed by the absorption or desorption of oxygen on the ZnO surface under the applied strains. The proposed strain-induced optoelectronic property modulation of highly crystalline ZnO thin films is promising for the development of future multifunctional flexible, transparent, and wearable electronics.

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Section: Introductionmentioning

confidence: 99%

Strain-Induced Photocurrent Enhancement in Photodetectors Based on Nanometer-Thick ZnO Films on Flexible Polydimethylsiloxane Substrates

Mun

Lee

et al. 2020

ACS Appl. Nano Mater.

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“…Mechanical and electric-field manipulation of micrometer-sized freestanding flakes in electron-microscopy experiments [35,36] and straining experiments on polymersupported ultrathin perovskite membranes (restricted to films <10 nm in thickness) [37,38] have demonstrated their exceptional flexibility. Whereas transfer to polymers or electroactive substrates has been exploited to tune magnetic properties, [38][39][40] test the resilience of ferroelectric properties, [41][42][43] or induce ferroelectricity in non-polar materials, [44] deterministic strain control of properties has not been demonstrated on single-crystal ferroelectric membranes.…”

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confidence: 99%

Beyond Substrates: Strain Engineering of Ferroelectric Membranes

et al. 2020

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Integrating the diverse functionalities of complex oxides into semiconductor [1-7] and flexible [8-12] electronics is a major technological challenge that has motivated extensive work. But despite considerable effort, the structural, chemical, and thermal mismatches between such substrates and complex-oxide materials often yield films with considerably worse crystal quality than that attained on single-crystal perovskite substrates. Alternative strategies for hetero-integration via substrate release and transfer, mimicking the fabrication processes of van-der-Waals heterostructures, [13-15] are just now beginning to yield single-crystal oxide films on arbitrary substrates, [16-21] thus circumventing the constraints of epitaxial growth. Moreover, these detached films no longer experience mechanical constraint from the substrate, giving more flexibility in structural manipulation and heterostructure assembly. Strain control over the lattice structure is particularly impactful in ferroelectrics where the polarization is directly connected to structural distortions. [22,23] In thin films, strain can define the optimal operating temperature regime [24-26] or domain configuration [27-29] that will boost electro-mechanical or thermal functionalities, Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high-quality substrates. Here, using the ferroelectric BaTiO 3 , production of precisely strain-engineered, substratereleased nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the released membranes. In devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm −1 and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100-nm-thick film). In devices integrated on flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0.1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via direct epitaxial growth. Perovskite ABO 3 oxides can display an immense number of phases and functions by merely changing the A-and B-site cations. Even within a single chemistry, multiple phases can be in competition, and their stability can be tuned statically by fixing The ORCID identification number(s) for the ...

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“…Epitaxial liftoff has been hitherto employed to transfer films of III-V semiconductors 28,29,31,32 and transition metal perovskite oxides [33][34][35][36][37][38][39][40] to passive substrates. Transition metal perovskite oxide films have not been hitherto transferred to electroactive substrates, but one may anticipate viable strain coupling in light of the fact that film properties can be mechanically manipulated via mechanically formed interfaces, as seen for manganite films transferred to flexible substrates 41,42 , and two-dimensional structures transferred to electroactive substrates 43 .…”

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confidence: 99%

Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

et al. 2020

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Epitaxial films may be released from growth substrates and transferred to structurally and chemically incompatible substrates, but epitaxial films of transition metal perovskite oxides have not been transferred to electroactive substrates for voltage control of their myriad functional properties. Here we demonstrate good strain transmission at the incoherent interface between a strain-released film of epitaxially grown ferromagnetic La 0.7 Sr 0.3 MnO 3 and an electroactive substrate of ferroelectric 0.68Pb(Mg 1/3 Nb 2/3)O 3-0.32PbTiO 3 in a different crystallographic orientation. Our strain-mediated magnetoelectric coupling compares well with respect to epitaxial heterostructures, where the epitaxy responsible for strong coupling can degrade film magnetization via strain and dislocations. Moreover, the electrical switching of magnetic anisotropy is repeatable and non-volatile. High-resolution magnetic vector maps reveal that micromagnetic behaviour is governed by electrically controlled strain and cracks in the film. Our demonstration should inspire others to control the physical/ chemical properties in strain-released epitaxial oxide films by using electroactive substrates to impart strain via non-epitaxial interfaces.

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Integration of Both Invariable and Tunable Microwave Magnetisms in a Single Flexible La_0.67Sr_0.33MnO₃ Thin Film

Cited by 28 publications

References 28 publications

Strain-Induced Photocurrent Enhancement in Photodetectors Based on Nanometer-Thick ZnO Films on Flexible Polydimethylsiloxane Substrates

Strain-Induced Photocurrent Enhancement in Photodetectors Based on Nanometer-Thick ZnO Films on Flexible Polydimethylsiloxane Substrates

Beyond Substrates: Strain Engineering of Ferroelectric Membranes

Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

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