Parameter CharacteristicsTypical composition 250ml HF (49.2 wt%) + 500ml HNO 3 (69.5 wt%) + 800ml CH 3 COOH [3]Etch rate 4um/min -20um/min (at room temperature and increases with agitation) [4] Surface roughness Rough-with more proportion of HNO 3
Smooth -with more proportion of HF [1]Temperature dependent 10-20Kcal/mol activation energy for concentrated HNO 3 , and 4Kcal/mole for concentrated
HF [5]Masking material Silicon-nitride is the best mask material with only 10 o A-100 o A/min etches rates in HNA.