Integrating and Tagging Biological Structures with Nanoscale Semiconductor Quantum dot Structures

Stroscio, Michael A.; Dutta, Mitra; Narwani, Kavita; Shi, Peng; Ramadurai, Dinakar; Kohanpour, Babak; Rufo, Salvador

doi:10.1007/0-306-48628-8_1

Cited by 11 publications

(8 citation statements)

References 139 publications

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“…Wutzite-based nanostructures have attracted attention in applications ranging from nanoelectronics, to optoelectronics, to nanobiosensors [1][2][3][4][5][6]. The spontaneous polarization of selected wurtzite materials is known to lead to significant device-related effects including built-in electrostatic potentials of up to a few MV/cm [1].…”

Section: Introductionmentioning

confidence: 99%

“…The spontaneous polarization of selected wurtzite materials is known to lead to significant device-related effects including built-in electrostatic potentials of up to a few MV/cm [1]. In addition, the use of colloidal quantum dots with built-in polarizations has been considered in biological applications including the interaction of manmade nanostructures with ion channels in neurons [2][3][4]. Moreover, the band bending in such colloidal quantum dots has been investigated as a useful indicator of the electric field strength in the neighborhood of such a quantum dot [7].…”

Section: Introductionmentioning

confidence: 99%

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Spontaneous polarization effects in nanoscale wurtzite structures

2007

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spontaneous polarization effects in nanoscale wurtzite structures

2007

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“…Both of these quantum dots were functionalized with short chain peptides formed of four amino acids glycine-glycine-glycine-cystine (GGGC) as described elsewhere. 11 Photoluminescence spectra were measured using a 325 nm Ar+ ion laser on three different samples: (i) 535 nm CdSe/ZnS green dots; (ii) 605 nm CdSe/ZnS orange dots; (iii) samples where (i) and (ii) are conjugated with GGGC peptides and mixed together. For FRET to occur, the two nanostructures must be close to each other.…”

Section: Colloidal Semiconductor Nanocrystals: Basic Propertiesmentioning

confidence: 99%

Colloidal quantum dots as optoelectronic elements

et al. 2006

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A variety of colloidal semiconductor quantum dots and related quantum-wire structures are characterized using absorption and photoluminescence measurements. The electronic properties of these structures are modeled and compared with experiment. The characterization and application of ensembles of colloidal quantum dots with molecular interconnects are considered. The chemically-directed assembly of ensembles of colloidal quantum dots with biomolecular interconnects is demonstrated with quantum dot densities in excess of 10 +17 cm -3 . Non-charge transfer processes for switching based on dipole-dipole interactions -Forester interactions -are examined for colloidal quantum dots linked with biomolecules. Charge transport in biomolecules is studied using indirect-bandgap colloidal nanocrystals linked with biomolecules.

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“…Second, crystal defects arise due to growth on lattice mismatched substrates like SiC, GaAs or sapphire, which have been explored due to the high cost of GaN substrates [12]. The polarization field arises due to the growth of wurtzites as uniaxial crystals [13]. To mitigate the effects of the polarization field, growth along the m-plane and a-plane have been considered but they have resulted in no significant improvement as compared with the c-plane wurtzite.…”

Section: Introductionmentioning

confidence: 99%

Electron–optical-phonon scattering rates in cubic group III-nitride crystals: path-integral corrections to Fermi golden rule matrix elements

Singh¹,

Dutta²,

Stroscio³

2021

Semicond. Sci. Technol.

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III-nitride semiconductors with a cubic crystal structure have shown promise in enhancing efficiency in photonic and optoelectronic applications. The recent interest in cubic III-nitrides has arisen due to the inability to realize enhanced efficiency in optoelectronic applications of the wurtzite phase due to spontaneous polarization effects, crystal defects due to growth on lattice mismatched substrates, and also due to the requirement to fabricate normally-off transistors for high-mobility transistors. Cubic III-nitride materials are characterized by the strong coupling of carriers to optical phonons in which the standard perturbative approach—based on first order perturbation theory—breaks down. In this paper we determine the necessary corrections to the Fermi golden rule electron–optical-phonon matrix elements for selected cubic III-nitrides via the nonperturbative Thornber–Feynman path-integral techniques. Specifically, we report electron transport parameters such as the threshold electric field, threshold velocity, mobility and runaway length for BN, AlN, GaN and InN. 72.10.Di, 72.15.Lh, 72.80.Ey.

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Integrating and Tagging Biological Structures with Nanoscale Semiconductor Quantum dot Structures

Cited by 11 publications

References 139 publications

Spontaneous polarization effects in nanoscale wurtzite structures

Spontaneous polarization effects in nanoscale wurtzite structures

Colloidal quantum dots as optoelectronic elements

Electron–optical-phonon scattering rates in cubic group III-nitride crystals: path-integral corrections to Fermi golden rule matrix elements

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